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K. Asano · SciRah

Researcher profile · Semantic Scholar

K. Asano

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K. Asano — researcher profile on SciRah

h-index: 14
Works: 71
Citations: 642

Most-cited papers

Development of Ultrahigh-Voltage SiC Devices
K. Fukuda, Dai Okamoto, M. Okamoto, Tadayoshi Deguchi +19 more
2015IEEE Transactions on Electron Devices81 citations
Semantic Scholar
6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
Y. Sugawara, K. Asano, Ranbir Singh, J. Palmour
200056 citations Open access
Semantic Scholar
Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation
K. Nakayama, A. Tanaka, M. Nishimura, K. Asano +3 more
2012IEEE Transactions on Electron Devices37 citations
Semantic Scholar
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
H. Tsuchida, Toshiyuki Miyanagi, I. Kamata, Tomonori Nakamura +5 more
200536 citations Open access
Semantic Scholar
12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT
Y. Sugawara, D. Takayama, K. Asano, A. Agarwal +3 more
2004Proceedings of the International Symposium on Power Semiconductor Devices & ICs34 citations
Semantic Scholar
Electric Field Effect on the Al-MgO-YBa2Cu3Oy Structure
U. Kabasawa, K. Asano, Takeshi Kobayashi
199034 citations Open access
Semantic Scholar
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
H. Yano, T. Hirao, T. Kimoto, H. Matsunami +2 more
200032 citations Open access
Semantic Scholar
Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers
Toshihiko Hayashi, K. Asano, Jun Suda, T. Kimoto
201129 citations Open access
Semantic Scholar
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +27 more
201522 citations
Semantic Scholar
High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
T. Kimoto, N. Miyamoto, A. Schöner, A. Saitoh +3 more
200218 citations Open access
Semantic Scholar
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa, T. Kato +32 more
2014International Symposium on Power Semiconductor Devices and IC's17 citations
Semantic Scholar
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
K. Nakayama, Y. Sugawara, H. Tsuchida, Toshiyuki Miyanagi +4 more
200516 citations Open access
Semantic Scholar
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2
Y. Sugawara, K. Asano, Dai Takayama, S. Ryu +3 more
200216 citations Open access
Semantic Scholar
3.6 kV 4H-SiC JBS Diodes with Low RonS
Y. Sugawara, K. Asano, R. Saito
200016 citations Open access
Semantic Scholar
Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors
T. Miyazawa, K. Nakayama, A. Tanaka, K. Asano +4 more
201513 citations
Semantic Scholar
Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
K. Nakayama, R. Ishii, K. Asano, T. Miyazawa +2 more
201113 citations Open access
Semantic Scholar
Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures
Tadayoshi Deguchi, Tomonori Mizushima, H. Fujisawa, Kensuke Takenaka +12 more
2014International Symposium on Power Semiconductor Devices and IC's12 citations
Semantic Scholar
Progress in ultrahigh-voltage SiC devices for future power infrastructure
T. Kimoto, J. Suda, Y. Yonezawa, K. Asano +2 more
20142014 IEEE International Electron Devices Meeting11 citations
Semantic Scholar
Selective Heteroepitaxial Growth of (100)-MgO/(001)-Y1Ba2Cu3Oy on MgO Substrate and Its Superconductivity
K. Sakuta, K. Asano, Takahiro Awaji, S. Hashiguchi +1 more
199011 citations Open access
Semantic Scholar
Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation
A. Tanaka, K. Nakayama, K. Asano, T. Miyazawa +1 more
201410 citations Open access
Semantic Scholar
Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
T. Miyazawa, S. Ji, K. Kojima, Y. Ishida +4 more
201410 citations Open access
Semantic Scholar
Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults
A. Tanaka, K. Nakayama, K. Asano, T. Miyazawa +1 more
201310 citations Open access
Semantic Scholar
Reliability investigation of SiC bipolar device module in long time inverter operation
A. Tanaka, S. Ogata, T. Izumi, K. Nakayama +3 more
2012International Symposium on Power Semiconductor Devices and IC's9 citations
Semantic Scholar
Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
K. Nakayama, Y. Sugawara, Y. Miyanagi, K. Asano +4 more
20089 citations Open access
Semantic Scholar
13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
Dai Okamoto, Yasunori Tanaka, Tomonori Mizushima, M. Yoshikawa +21 more
20148 citations
Semantic Scholar
Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices
Toshihiko Hayashi, T. Izumi, T. Hemmi, K. Asano
20137 citations
Semantic Scholar
Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa +1 more
20137 citations
Semantic Scholar
Fast epitaxial growth of high-purity 4H-SiC( $$000\bar 1$$ ) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition
K. Danno, T. Kimoto, K. Asano, Y. Sugawara +1 more
20057 citations
Semantic Scholar
Development of fanless high efficiency 30 kVA SiC-UPS
T. Izumi, N. Hatano, S. Ogata, H. Matsumura +2 more
2016International Conference on Electrical Machines and Systems4 citations
Semantic Scholar
Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor
K. Nakayama, A. Tanaka, S. Ogata, T. Izumi +2 more
20144 citations
Semantic Scholar
Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
T. Izumi, T. Hemmi, Toshihiko Hayashi, K. Asano
20134 citations Open access
Semantic Scholar
5kV class 4H-SiC PiN diode with low voltage overshoot during forward recovery for high frequency inverter
S. Ogata, Y. Miyanagi, K. Nakayama, A. Tanaka +1 more
20112011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs4 citations
Semantic Scholar
Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
Y. Sugawara, S. Ogata, Yoichi Miyanagi, K. Asano +4 more
20084 citations Open access
Semantic Scholar
Aero-dynamical motion of charged droplets ejected from the 26 /spl mu/m nozzle [continuous jet printing]
K. Yatsuzuka, Kazuki Saito, K. Asano
1997IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting4 citations
Semantic Scholar
Dynamic Characteristics of 6.2 kV High Voltage 4H-SiC pn Diode with Low Loss
K. Asano, Toshihiko Hayashi, Dai Takayama, Y. Sugawara +2 more
20033 citations Open access
Semantic Scholar
Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
T. Iwasaki, T. Oono, K. Asano, Y. Sugawara +1 more
1997Proceedings of the International Symposium on Power Semiconductor Devices & ICs3 citations
Semantic Scholar
Selective epitaxial growth of YBaCuO thin films and its application to MOSFET fabrication
S. Hashiguchi, E. Min, Takahiro Awaji, K. Asano +3 more
19913 citations
Semantic Scholar
Development of ultrahigh voltage SiC power devices
K. Fukuda, Dai Okamoto, S. Harada, Yasunori Tanaka +22 more
20142014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)2 citations
Semantic Scholar
High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
K. Nakayama, S. Ogata, Toshihiko Hayashi, T. Hemmi +13 more
20142 citations Open access
Semantic Scholar
Ultrahigh voltage SiC bipolar devices
K. Fukuda, Dai Okamoto, S. Harada, Yasunori Tanaka +22 more
2013IEEE Workshop on Wide Bandgap Power Devices and Applications2 citations
Semantic Scholar
Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
Toshihiko Hayashi, K. Asano, J. Suda, T. Kimoto
20102 citations Open access
Semantic Scholar
Simple circuit model of SiC pin diode composed by using experimental electrical characteristics
K. Asano, T. Funaki, Y. Sugawara, T. Hikihara
2005IEICE Electronics Express2 citations Open access
Semantic Scholar
A unified proposal for characteristic testing methods and figure of merit of 8‐kV/3.5‐kVA class light‐triggered thyristors
K. Asano, Y. Sugawara
20022 citations
Semantic Scholar
Anisotropy of inversion channel mobility in 4H-and 6H-SIC MOSFETs on (11(2)over-bar0) face
H. Yano, T. Hirao, T. Kimoto, H. Matsunami +2 more
20002 citations
Semantic Scholar
Aero-Dynamical Motion of Charged Droplets Ejected from the 26 pm Nozzle
K. Yatsuzuka, K. Saito, K. Asano
19972 citations
Semantic Scholar
Catastrophic Local Degradation of YBa2Cu3Oy Epitaxial Film Induced by High Electric Field Application
U. Kabasawa, K. Asano, M. Iyori, S. Hirata +3 more
19902 citations
Semantic Scholar
Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices
Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +26 more
20141 citations
Semantic Scholar
Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer
K. Nakayama, T. Hemmi, K. Asano
20131 citations Open access
Semantic Scholar
Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode
K. Asano, A. Tanaka, S. Ogata, K. Nakayama +1 more
20121 citations Open access
Semantic Scholar
Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation
K. Nakayama, A. Tanaka, K. Asano, T. Miyazawa +2 more
20121 citations Open access
Semantic Scholar

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K. Nakayama×25
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K. Nakayama — researcher profile on SciRah
A. Tanaka×17
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A. Tanaka — researcher profile on SciRah
Toshihiko Hayashi×16
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Y. Sugawara×16
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T. Izumi — researcher profile on SciRah

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