S. Ryu

Most-cited papers

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
J. Palmour, L. Cheng, V. Pala, E. V. Brunt +8 more
2014International Symposium on Power Semiconductor Devices and IC's284 citations
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Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
Kasunaidu Vechalapu, S. Bhattacharya, E. Van Brunt, S. Ryu +2 more
2015IEEE Journal of Emerging and Selected Topics in Power Electronics119 citations
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Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters
A. Kadavelugu, S. Bhattacharya, S. Ryu, E. Van Brunt +3 more
20132013 IEEE Energy Conversion Congress and Exposition97 citations
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Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs
B. Hull, S. Allen, Q. Zhang, Donald A. Gajewski +10 more
2014IEEE Workshop on Wide Bandgap Power Devices and Applications78 citations
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Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs
S. Ryu, C. Capell, C. Jonas, Lin Cheng +5 more
2012International Symposium on Power Semiconductor Devices and IC's76 citations
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22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation
E. V. Brunt, L. Cheng, M. O'Loughlin, C. Capell +9 more
2014International Symposium on Power Semiconductor Devices and IC's73 citations
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Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications
Sachin Madhusoodhanan, K. Hatua, S. Bhattacharya, S. Leslie +4 more
2012European Conference on Cognitive Ergonomics73 citations
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SiC power device reliability
D. Gajewski, B. Hull, D. Lichtenwalner, S. Ryu +5 more
2016International Integrated Reliability Workshop57 citations
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Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices
Cher X. Zhang, En Zhang, D. Fleetwood, peixiong zhao +4 more
2011IEEE Transactions on Nuclear Science51 citations
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Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
S. Ryu, B. Hull, S. Dhar, Lin Cheng +8 more
201050 citations Open access
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Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs
Gangyao Wang, A. Huang, Fei Wang, Xiaoqing Song +5 more
2015International Symposium on Power Semiconductor Devices and IC's48 citations
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Development of 15 kV 4H-SiC IGBTs
S. Ryu, Lin Cheng, S. Dhar, C. Capell +7 more
201248 citations Open access
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High performance, ultra high voltage 4H-SiC IGBTs
S. Ryu, C. Capell, Lin Cheng, C. Jonas +10 more
2012European Conference on Cognitive Ergonomics48 citations
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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
N. Ericson, S. Frank, C. Britton, L. Marlino +15 more
2014IEEE transactions on power electronics47 citations
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Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C
Lin Cheng, A. Agarwal, S. Dhar, S. Ryu +1 more
2012Journal of Electronic Materials46 citations
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Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs
Cher X. Zhang, En Zhang, D. Fleetwood, peixiong zhao +4 more
2013IEEE Electron Device Letters42 citations
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A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs
S. Dhar, S. Ryu, A. Agarwal
2010IEEE Transactions on Electron Devices41 citations
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Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions
Kasunaidu Vechalapu, S. Bhattacharya, E. Van Brunt, S. Ryu +2 more
2017European Conference on Cognitive Ergonomics40 citations
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Ultra high voltage IGBTs in 4H-SiC
S. Ryu, Craig Capell, C. Jonas, Y. Lemma +12 more
2013IEEE Workshop on Wide Bandgap Power Devices and Applications39 citations
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Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors
En Zhang, Cher X. Zhang, D. M. Fleetwod, peixiong zhao +4 more
2012IEEE transactions on device and materials reliability38 citations
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Understanding dv/dt of 15 kV SiC N-IGBT and its control using active gate driver
A. Kadavelugu, S. Bhattacharya, S. Leslie, S. Ryu +2 more
2014European Conference on Cognitive Ergonomics37 citations
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Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes
V. Pala, E. Van Brunt, S. Ryu, B. Hull +3 more
2016International Symposium on Power Semiconductor Devices and IC's35 citations
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Ultra high voltage MOS controlled 4H-SiC power switching devices
S. Ryu, Craig Capell, E. Van Brunt, C. Jonas +17 more
201535 citations
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Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†
T. Duong, J. M. Ortiz, David W. Berning, Allen R. Hefner +2 more
2015International Symposium on Power Semiconductor Devices and IC's35 citations
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Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures
Xiao Shen, En Zhang, Cher X. Zhang, D. Fleetwood +4 more
201135 citations
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Design comparison of 6.5 kV Si-IGBT, 6.5kV SiC JBS diode, and 10 kV SiC MOSFETs in megawatt converters for shipboard power system
Hesam Mirzaee, S. Bhattacharya, S. Ryu, A. Agarwal
20112011 IEEE Electric Ship Technologies Symposium34 citations
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High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors
B. Tuttle, S. Dhar, S. Ryu, Xing-Guang Zhu +3 more
201131 citations
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Experimental switching frequency limits of 15 kV SiC N-IGBT module
A. Kadavelugu, S. Bhattacharya, S. Ryu, E. Van Brunt +2 more
20142014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)30 citations
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Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs
A. Kadavelugu, Krishna Mainali, D. Patel, S. Madhusoodhanan +6 more
2015Applied Power Electronics Conference27 citations
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20 kV 4H-SiC N-IGBTs
S. Ryu, C. Capell, C. Jonas, M. O'Loughlin +11 more
201426 citations Open access
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Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETs
Cher X. Zhang, Xiao Shen, En Zhang, D. Fleetwood +6 more
2013IEEE Transactions on Electron Devices26 citations
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Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
S. Dhar, A. Ahyi, John R. Williams, S. Ryu +1 more
201226 citations Open access
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Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications
T. Duong, A. Hefner, K. Hobart, S. Ryu +5 more
2011Applied Power Electronics Conference26 citations
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Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
D. Gajewski, S. Ryu, M. Das, B. Hull +2 more
201425 citations Open access
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Latest results on 1200 V 4H-SiC CIMOSFETs with R sp, on of 3.9 mΩ·cm 2 at 150°C
Q. Zhang, Gangyao Wang, Huy Doan, S. Ryu +4 more
2015International Symposium on Power Semiconductor Devices and IC's22 citations
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15 kV IGBTs in 4H-SiC
S. Ryu, C. Capell, C. Jonas, M. O'Loughlin +9 more
201321 citations Open access
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3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications
S. Ryu, Lin Cheng, S. Dhar, C. Capell +7 more
20112011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs21 citations
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Next-Generation Planar SiC MOSFETs from 900 V to 15 kV
S. Allen, V. Pala, Edward VanBrunt, B. Hull +6 more
201520 citations Open access
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Accelerated Testing of SiC Power Devices
D. Lichtenwalner, S. Sabri, E. Van Brunt, B. Hull +7 more
2020International Integrated Reliability Workshop19 citations
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A unified silicon/silicon carbide IGBT model
M. Saadeh, H. Mantooth, Juan Carlos Balda, Jerry L. Hudgins +3 more
2012Applied Power Electronics Conference18 citations
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900V silicon carbide MOSFETs for breakthrough power supply design
V. Pala, A. Barkley, B. Hull, Gangyao Wang +10 more
2015European Conference on Cognitive Ergonomics15 citations
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Turn-ON of High-Voltage SiC Thyristors for Fast-Switching Applications
H. O'Brien, A. Ogunniyi, W. Shaheen, S. Ryu
2016IEEE Journal of Emerging and Selected Topics in Power Electronics14 citations
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Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs
J. Casady, V. Pala, E. Van Brunt, B. Hull +11 more
201613 citations
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Performance of a 1-kV, Silicon Carbide Avalanche Breakdown Diode
Damian Urciuoli, S. Ryu, D. C. Capell, Dimeji Ibitayo +2 more
2015IEEE transactions on power electronics13 citations
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Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs
T. Duong, Allen R. Hefner, J. Ortiz-Rodríguez, S. Ryu +4 more
2014European Conference on Cognitive Ergonomics13 citations
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CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit
Qing Chun Jon Zhang, J. Duc, B. Hull, Jonathan Young +3 more
201512 citations
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15 kV SiC IGBT based three-phase three-level modular-leg power converter
D. Patel, A. Kadavelugu, S. Madhusoodhanan, S. Bhattacharya +5 more
20132013 IEEE Energy Conversion Congress and Exposition12 citations
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Thermal design considerations for 12kV SiC n-IGBT based 3L NPC converter
Giti Karimi-Moghaddam, R. Gould, Sachin Madhusoodhanan, K. Hatua +6 more
2012European Conference on Cognitive Ergonomics12 citations
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15 kV n-GTOs in 4H-SiC
S. Ryu, D. Lichtenwalner, M. O'Loughlin, C. Capell +15 more
2019Materials Science Forum11 citations Open access
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Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
Q.-J. Zhang, G. Wang, C. Jonas, C. Capell +11 more
20162016 European Conference on Silicon Carbide & Related Materials (ECSCRM)11 citations
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