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Kensuke Takenaka · SciRah

Researcher profile · Semantic Scholar

Kensuke Takenaka

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Kensuke Takenaka — researcher profile on SciRah

h-index: 12
Works: 31
Citations: 530

Most-cited papers

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes
T. Tawara, T. Miyazawa, Mina Ryo, Masaki Miyazato +10 more
2016100 citations
Semantic Scholar
Development of Ultrahigh-Voltage SiC Devices
K. Fukuda, Dai Okamoto, M. Okamoto, Tadayoshi Deguchi +19 more
2015IEEE Transactions on Electron Devices81 citations
Semantic Scholar
Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
T. Tawara, Shinichiro Matsunaga, Takumi Fujimoto, Mina Ryo +10 more
201859 citations
Semantic Scholar
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +27 more
20132013 IEEE International Electron Devices Meeting46 citations
Semantic Scholar
Fabrication of a P-Channel SiC-IGBT with High Channel Mobility
S. Katakami, H. Fujisawa, Kensuke Takenaka, H. Ishimori +5 more
201335 citations
Semantic Scholar
Long-Range-Ordered Anodic Porous Alumina with Less-Than-30 nm Hole Interval
H. Masuda, Kensuke Takenaka, T. Ishii, K. Nishio
200631 citations
Semantic Scholar
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +27 more
201522 citations
Semantic Scholar
Effects of ion implantation process on defect distribution in SiC SJ-MOSFET
Takuya Fukui, T. Ishii, T. Tawara, Kensuke Takenaka +1 more
2023Japanese Journal of Applied Physics21 citations
Semantic Scholar
27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control
K. Nakayama, Tomonori Mizushima, Kensuke Takenaka, Akihiro Koyama +8 more
2018International Symposium on Power Semiconductor Devices and IC's20 citations
Semantic Scholar
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa, T. Kato +32 more
2014International Symposium on Power Semiconductor Devices and IC's17 citations
Semantic Scholar
Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
T. Tawara, T. Miyazawa, Mina Ryo, Masaki Miyazato +10 more
20162016 European Conference on Silicon Carbide & Related Materials (ECSCRM)14 citations Open access
Semantic Scholar
20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
Akihiro Koyama, Y. Kiuchi, Tomonori Mizushima, Kensuke Takenaka +9 more
201913 citations
Semantic Scholar
Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures
Tadayoshi Deguchi, Tomonori Mizushima, H. Fujisawa, Kensuke Takenaka +12 more
2014International Symposium on Power Semiconductor Devices and IC's12 citations
Semantic Scholar
Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
Tadayoshi Deguchi, S. Katakami, H. Fujisawa, Kensuke Takenaka +7 more
201411 citations Open access
Semantic Scholar
Effect of the column design and fabrication method on the reverse recovery characteristics of 1.2 kV SiC-superjunction-MOSFETs
Takeshi Tawara, Kensuke Takenaka, Syunki Narita, M. Sometani +4 more
2024Materials Science in Semiconductor Processing9 citations Open access
Semantic Scholar
13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
Dai Okamoto, Yasunori Tanaka, Tomonori Mizushima, M. Yoshikawa +21 more
20148 citations
Semantic Scholar
Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices
S. Katakami, M. Arai, Kensuke Takenaka, Y. Yonezawa +4 more
20126 citations Open access
Semantic Scholar
Double-implanted 4H-SiC superjunction UMOSFET without bipolar degradation
Kensuke Takenaka, Takeshi Tawara, Syunki Narita, S. Harada
2024Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials5 citations
Semantic Scholar
Low VF 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates
Akihiro Koyama, M. Sometani, Kensuke Takenaka, K. Nakayama +7 more
2019Japanese Journal of Applied Physics4 citations
Semantic Scholar
Low Von 17kV SiC IGBT assisted n-MOS Thyristor
Shinichiro Matsunaga, Tomonori Mizushima, Kensuke Takenaka, Y. Kiuchi +3 more
2019International Electron Devices Meeting4 citations
Semantic Scholar
Large-Area, Light-Weight Flexible Solar Cells Using Plastic Film Substrates
A. Takano, S. Fujikake, H. Matsuyama, T. Wada +9 more
20103 citations
Semantic Scholar
Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET
Shinichiro Matsunaga, Takeshi Tawara, Syunki Narita, Masakazu Baba +3 more
2025International Symposium on Power Semiconductor Devices and IC's2 citations
Semantic Scholar
Development of ultrahigh voltage SiC power devices
K. Fukuda, Dai Okamoto, S. Harada, Yasunori Tanaka +22 more
20142014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)2 citations
Semantic Scholar
High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
K. Nakayama, S. Ogata, Toshihiko Hayashi, T. Hemmi +13 more
20142 citations Open access
Semantic Scholar
Ultrahigh voltage SiC bipolar devices
K. Fukuda, Dai Okamoto, S. Harada, Yasunori Tanaka +22 more
2013IEEE Workshop on Wide Bandgap Power Devices and Applications2 citations
Semantic Scholar
Demonstration of High Single-Event Gate Tolerance in SiC UMOSFET by Trench-Bottom Hole Extraction
T. Suematsu, K. Kobayashi, Shinichiro Matsunaga, Kensuke Takenaka +10 more
2026International Symposium on Power Semiconductor Devices and IC's1 citations
Semantic Scholar
Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices
Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +26 more
20141 citations
Semantic Scholar
Body Diode Reliability and Reverse Recovery Characteristics of Short Tapered SJ-MOSFET Fabricated by MeV Al Ion Implantation
Takeshi Tawara, Kensuke Takenaka, Syunki Narita, S. Harada
2026Key Engineering Materials0 citations Open access
Semantic Scholar
Development of in-situ observation for expansion and shrinkage of stacking faults induced in 4H-SiC PiN diode under electronic excitations.
Mina Ryo, T. Tawara, Masaki Miyazato, Takumi Fujimoto +5 more
20160 citations
Semantic Scholar
Evaluation of crystalline dislocations of 4H-SiC single crystal substrate by observation of birefringence image
Kensuke Takenaka, T. Kato, T. Matsunaga, M. Takei +2 more
20160 citations
Semantic Scholar
13:55 ~ 14:15 12-2 Large-Area and Light-Weight Film Solar Modules
Naoyuki Ohse, K. Tokoi, Kensuke Takenaka, A. Satoshi +8 more
20100 citations
Semantic Scholar

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Y. Yonezawa×21
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Y. Yonezawa — researcher profile on SciRah
H. Okumura×19
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M. Takei — researcher profile on SciRah

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Tomonori Mizushima×11

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