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J. Suda · SciRah

Researcher profile · Semantic Scholar

J. Suda

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J. Suda — researcher profile on SciRah

h-index: 39
Works: 491
Citations: 5,902

Most-cited papers

Impact ionization coefficients and critical electric field in GaN
T. Maeda, T. Narita, S. Yamada, T. Kachi +3 more
2021103 citations
Semantic Scholar
Progress on and challenges of p-type formation for GaN power devices
T. Narita, Hikaru Yoshida, K. Tomita, K. Kataoka +7 more
202093 citations Open access
Semantic Scholar
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
T. Kachi, T. Narita, Hideki Sakurai, M. Matys +8 more
2022Journal of Applied Physics41 citations Open access
Semantic Scholar
Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing
Hideki Sakurai, T. Narita, Masato Omori, S. Yamada +8 more
2020Applied Physics Express41 citations Open access
Semantic Scholar
Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
K. Kanegae, H. Fujikura, Y. Otoki, Taichiro Konno +4 more
2019Applied Physics Letters39 citations
Semantic Scholar
Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices
T. Narita, K. Tomita, K. Kataoka, Y. Tokuda +9 more
2019Japanese Journal of Applied Physics38 citations
Semantic Scholar
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
T. Narita, M. Kanechika, Jun Kojima, H. Watanabe +10 more
2022Scientific Reports34 citations Open access
Semantic Scholar
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
A. Uedono, Hideki Sakurai, T. Narita, K. Sierakowski +5 more
2020Scientific Reports33 citations Open access
Semantic Scholar
Identification of origin of EC –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy
M. Horita, T. Narita, T. Kachi, J. Suda
2020Applied Physics Express32 citations Open access
Semantic Scholar
Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching
S. Yamada, Masato Omori, Hideki Sakurai, Yamato Osada +4 more
2019Applied Physics Express32 citations Open access
Semantic Scholar
Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
Kenji Iwata, Hideki Sakurai, S. Arai, T. Nakashima +7 more
202031 citations
Semantic Scholar
Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate
M. Horita, T. Narita, T. Kachi, J. Suda
202130 citations Open access
Semantic Scholar
Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
M. Matys, Kazuki Kitagawa, T. Narita, T. Uesugi +2 more
2022Applied Physics Letters28 citations Open access
Semantic Scholar
Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient
Kensuke Sumida, Kazufumi Hirukawa, Hideki Sakurai, K. Sierakowski +4 more
2021Applied Physics Express28 citations
Semantic Scholar
Mg-implanted bevel edge termination structure for GaN power device applications
M. Matys, T. Ishida, K. Nam, Hideki Sakurai +5 more
202126 citations Open access
Semantic Scholar
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation
A. Uedono, Hideki Sakurai, J. Uzuhashi, T. Narita +9 more
2022physica status solidi (b)25 citations
Semantic Scholar
Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
S. Yamada, Hideki Sakurai, Yamato Osada, K. Furuta +5 more
202123 citations
Semantic Scholar
Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates
Y. Ando, Ryutaro Makisako, Hidemasa Takahashi, A. Wakejima +1 more
2022IEEE Transactions on Electron Devices22 citations
Semantic Scholar
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings
M. Matys, T. Ishida, K. Nam, Hideki Sakurai +7 more
2021Applied Physics Express21 citations Open access
Semantic Scholar
Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn
Daiki Tanaka, K. Iso, J. Suda
2023Journal of Applied Physics20 citations
Semantic Scholar
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
Kazufumi Hirukawa, Kensuke Sumida, Hideki Sakurai, H. Fujikura +6 more
2021Applied Physics Express20 citations
Semantic Scholar
Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates
Hitoshi Takane, Y. Ando, Hidemasa Takahashi, Ryutaro Makisako +6 more
2023Applied Physics Express19 citations Open access
Semantic Scholar
Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
Hideki Sakurai, T. Narita, K. Kataoka, Kazufumi Hirukawa +8 more
2021Applied Physics Express19 citations
Semantic Scholar
Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
T. Shoji, T. Narita, Yoshitaka Nagasato, M. Kanechika +9 more
2021Applied Physics Express17 citations Open access
Semantic Scholar
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment
T. Ishida, Kyung Pil Nam, M. Matys, T. Uesugi +2 more
2020Applied Physics Express17 citations Open access
Semantic Scholar
Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration
T. Nakashima, E. Kano, K. Kataoka, S. Arai +8 more
2020Applied Physics Express17 citations Open access
Semantic Scholar
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
E. Kano, K. Kataoka, J. Uzuhashi, K. Chokawa +14 more
2022Journal of Applied Physics16 citations Open access
Semantic Scholar
Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress
T. Narita, Yoshitaka Nagasato, M. Kanechika, T. Kondo +9 more
2021Applied Physics Letters16 citations
Semantic Scholar
Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs
Y. Ando, Hidemasa Takahashi, Qiang Ma, A. Wakejima +1 more
2020IEEE Transactions on Electron Devices15 citations
Semantic Scholar
Why do electron traps at EC –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?
T. Narita, M. Horita, K. Tomita, T. Kachi +1 more
2020Japanese Journal of Applied Physics15 citations Open access
Semantic Scholar
Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques
S. Yamada, Kentaro Takeda, M. Toguchi, Hideki Sakurai +4 more
2020Applied Physics Express12 citations
Semantic Scholar
SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition
Keito Aoshima, N. Taoka, M. Horita, J. Suda
2022Japanese Journal of Applied Physics11 citations Open access
Semantic Scholar
Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations
T. Maeda, T. Narita, S. Yamada, T. Kachi +3 more
2022IEEE Electron Device Letters10 citations
Semantic Scholar
Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications
Hidemasa Takahashi, Y. Ando, Y. Tsuchiya, A. Wakejima +6 more
2021Electronics Letters10 citations Open access
Semantic Scholar
Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation
M. Matys, Kazuki Kitagawa, T. Narita, T. Uesugi +3 more
2023Japanese Journal of Applied Physics9 citations Open access
Semantic Scholar
P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing
M. Noborio, J. Suda, T. Kimoto
20209 citations
Semantic Scholar
Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior
Keito Aoshima, K. Kanegae, M. Horita, J. Suda
20208 citations Open access
Semantic Scholar
Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN
M. Endo, M. Horita, J. Suda
2022Applied Physics Letters7 citations
Semantic Scholar
Impacts of high temperature annealing above 1400° C under N2 overpressure to activate acceptors in Mg-implanted GaN
Hideki Sakurai, T. Narita, Kazufumi Hirukawa, S. Yamada +7 more
2020International Symposium on Power Semiconductor Devices and IC's7 citations
Semantic Scholar
Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing
M. Akazawa, R. Kamoshida, S. Murai, T. Narita +3 more
2019physica status solidi (b)7 citations Open access
Semantic Scholar
Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation
Keito Aoshima, M. Horita, J. Suda
2023Applied Physics Letters6 citations
Semantic Scholar
RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i ‐line stepper lithography
Yuji Ando, Hidemasa Takahashi, Ryutaro Makisako, A. Wakejima +1 more
2023Electronics Letters6 citations Open access
Semantic Scholar
Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance
S. Asada, J. Suda, T. Kimoto
2019IEEE Transactions on Electron Devices6 citations
Semantic Scholar
Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions
T. Narita, M. Kanechika, K. Tomita, Yoshitaka Nagasato +6 more
2023Applied Physics Letters5 citations
Semantic Scholar
Fabrication of 150-nm AlGaN/GaN field-plated High Electron Mobility Transistors using i-line stepper
Y. Ando, Ryutaro Makisako, Hidemasa Takahashi, A. Wakejima +1 more
20215 citations Open access
Semantic Scholar
Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
K. Kanegae, T. Narita, K. Tomita, T. Kachi +3 more
2021Applied Physics Express5 citations Open access
Semantic Scholar
Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors
S. Asada, J. Suda, T. Kimoto
2020IEEE Transactions on Electron Devices5 citations
Semantic Scholar
Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3
K. Ito, Hajime Tanaka, M. Horita, J. Suda +1 more
2024Applied Physics Express4 citations Open access
Semantic Scholar
High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3
K. Ito, M. Horita, J. Suda, T. Kimoto
2023Applied Physics Express4 citations Open access
Semantic Scholar
Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, A. Wakejima +1 more
2023Physica Status Solidi (a)4 citations Open access
Semantic Scholar

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T. Kachi — researcher profile on SciRah
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M. Horita×21
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M. Boćkowski — researcher profile on SciRah

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