Tadayoshi Deguchi

Most-cited papers

1. Development of Ultrahigh-Voltage SiC Devices

   K. Fukuda, Dai Okamoto, M. Okamoto, Tadayoshi Deguchi +19 more

   2015IEEE Transactions on Electron Devices81 citations

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2. Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

   Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +27 more

   20132013 IEEE International Electron Devices Meeting46 citations

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3. High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

   Tadayoshi Deguchi, Toshikatsu Kikuchi, M. Arai, K. Yamasaki +1 more

   2012IEEE Electron Device Letters24 citations

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4. Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

   Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +27 more

   201522 citations

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5. Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

   Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa, T. Kato +32 more

   2014International Symposium on Power Semiconductor Devices and IC's17 citations

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6. High-voltage AlGaN/GaN HFETs by using graded gate field plates

   Tadayoshi Deguchi, A. Kamada, M. Yamashita, H. Tomita +3 more

   201215 citations

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7. Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

   Tadayoshi Deguchi, Tomonori Mizushima, H. Fujisawa, Kensuke Takenaka +12 more

   2014International Symposium on Power Semiconductor Devices and IC's12 citations

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8. Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

   Tadayoshi Deguchi, S. Katakami, H. Fujisawa, Kensuke Takenaka +7 more

   201411 citations Open access

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9. High-Performance E-Mode AlGaN/GaN HEMTs with LT-GaN Cap Layer Using Gate Recess Techniques

   Tatsuhiko Adachi, Tadayoshi Deguchi, A. Nakagawa, Y. Terada +1 more

   2008Device Research Conference9 citations

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10. Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors

    Eiji Waki, Tadayoshi Deguchi, A. Nakagawa, T. Egawa

    20085 citations

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11. A low-phase-noise 76-GHz planar Gunn VCO using flip-chip bonding technology

    Takashi Yoshida, Y. Fukasawa, Tadayoshi Deguchi, K. Kawaguchi +2 more

    2005European Microwave Conference5 citations

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12. Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering

    M. Hashimoto, Tadayoshi Deguchi, S. Yokoyama, M. Hirose

    19943 citations

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13. Development of ultrahigh voltage SiC power devices

    K. Fukuda, Dai Okamoto, S. Harada, Yasunori Tanaka +22 more

    20142014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)2 citations

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14. Ultrahigh voltage SiC bipolar devices

    K. Fukuda, Dai Okamoto, S. Harada, Yasunori Tanaka +22 more

    2013IEEE Workshop on Wide Bandgap Power Devices and Applications2 citations

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15. Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices

    Y. Yonezawa, Tomonori Mizushima, Kensuke Takenaka, H. Fujisawa +26 more

    20141 citations

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16. A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology

    Takashi Yoshida, Fukasawa Yoshimichi, Tadayoshi Deguchi, K. Kawaguchi +2 more

    20061 citations

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17. Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs

    Tadayoshi Deguchi, M. Yamashita, Eiji Waki, A. Nakagawa +2 more

    20061 citations

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18. Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer

    Eiji Waki, Tadayoshi Deguchi, Satoru Ono, A. Nakagawa +2 more

    20041 citations

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19. AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)

    Tadayoshi Deguchi, T. Egawa

    2008SDM0 citations

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20. AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer

    Tadayoshi Deguchi, T. Egawa

    20080 citations

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21. AlGaN/GaN HFETs with a low-temperature GaN cap layer

    Eiji Waki, Satoru Ono, Tadayoshi Deguchi, A. Nakagawa +2 more

    20080 citations

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22. AlGaN/GaN HFETs with a low-temperature GaN cap layer

    Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Yamashita Meiichi +4 more

    20060 citations

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