Skip to content

Home Search Authors Pakistan News Saved

SciRah

SciRah does not host or store research papers. Results come live from free, official scholarly APIs, and every paper links back to its original source.

Data sources

OpenAlex
Semantic Scholar
Crossref
CORE
arXiv
PubMed

Privacy policy Terms of service

T. Shinohe · SciRah

Researcher profile · Semantic Scholar

T. Shinohe

Share profile

T. Shinohe — researcher profile on SciRah

h-index: 19
Works: 108
Citations: 1,341

Most-cited papers

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers
H. Matsuura, Masahiko Komeda, S. Kagamihara, H. Iwata +6 more
200498 citations Open access
Semantic Scholar
Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
T. Hatakeyama, T. Shinohe
200298 citations Open access
Semantic Scholar
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Y. Oshima, K. Kawara, T. Shinohe, T. Hitora +2 more
2019APL Materials89 citations Open access
Semantic Scholar
Parameters required to simulate electric characteristics of SiC devices for n-type 4H-SiC
S. Kagamihara, H. Matsuura, T. Hatakeyama, Takatoshi Watanabe +3 more
200486 citations
Semantic Scholar
Development of Ultrahigh-Voltage SiC Devices
K. Fukuda, Dai Okamoto, M. Okamoto, Tadayoshi Deguchi +19 more
2015IEEE Transactions on Electron Devices81 citations
Semantic Scholar
Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition
K. Akaiwa, K. Ota, Takahito Sekiyama, T. Abe +2 more
2020Physica Status Solidi (a)71 citations Open access
Semantic Scholar
Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics
K. Kaneko, Y. Masuda, Shin-ichi Kan, I. Takahashi +3 more
202164 citations
Semantic Scholar
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Y. Oshima, K. Kawara, T. Oshima, T. Shinohe
2020Japanese Journal of Applied Physics41 citations
Semantic Scholar
Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
T. Hatakeyama, Takatoshi Watanabe, M. Kushibe, K. Kojima +5 more
200339 citations
Semantic Scholar
Progress in α-Ga2O3 for practical device applications
K. Kaneko, S. Fujita, T. Shinohe, Katsuhisa Tanaka
2023Japanese Journal of Applied Physics34 citations
Semantic Scholar
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
T. Hatakeyama, M. Kushibe, Takatoshi Watanabe, S. Imai +1 more
200334 citations Open access
Semantic Scholar
Elimination of threading dislocations in α-Ga2O3 by double-layered epitaxial lateral overgrowth
K. Kawara, Y. Oshima, M. Okigawa, T. Shinohe
2020Applied Physics Express33 citations Open access
Semantic Scholar
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Y. Oshima, K. Kawara, T. Oshima, M. Okigawa +1 more
2020Semiconductor Science and Technology29 citations Open access
Semantic Scholar
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes
Aoi Okada, J. Nishio, R. Iijima, C. Ota +8 more
201825 citations Open access
Semantic Scholar
Microscopic Examination of SiO2/4H-SiC Interfaces
T. Hatakeyama, H. Matsuhata, Tatsuhiro Suzuki, T. Shinohe +1 more
201123 citations Open access
Semantic Scholar
Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation
Takuma Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda +2 more
200923 citations Open access
Semantic Scholar
Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition
T. Maeda, M. Okigawa, Y. Kato, I. Takahashi +1 more
202019 citations Open access
Semantic Scholar
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Y. Oshima, K. Kawara, T. Oshima, M. Okigawa +1 more
2020Japanese Journal of Applied Physics16 citations Open access
Semantic Scholar
Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
T. Hatakeyama, Takuma Suzuki, K. Ichinoseki, H. Matsuhata +3 more
201016 citations
Semantic Scholar
Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs
K. Fukuda, A. Kinoshita, T. Ohyanagi, R. Kosugi +16 more
201016 citations Open access
Semantic Scholar
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe +3 more
200616 citations Open access
Semantic Scholar
14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)
H. Kono, Masaru Furukawa, K. Ariyoshi, Takuma Suzuki +2 more
201415 citations
Semantic Scholar
Evaluation of a SiC power module using low-on-resistance IEMOSFET and JBS for high power density power converters
K. Takao, T. Shinohe, S. Harada, K. Fukuda +1 more
2010Applied Power Electronics Conference15 citations
Semantic Scholar
Systematic investigation on in-plane anisotropy of surface and buried channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a-, and m-face 4H-SiC
K. Ariyoshi, R. Iijima, S. Harada, K. Kojima +4 more
201514 citations
Semantic Scholar
3-Level power converter with high-voltage SiC-PiN diode and hard-gate-driving of IEGT for future high-voltage power conversion systems
K. Takao, Yasunori Tanaka, Kyungmin Sung, K. Wada +3 more
2010Applied Power Electronics Conference14 citations
Semantic Scholar
Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)
C. Ota, J. Nishio, K. Takao, T. Hatakeyama +4 more
200914 citations Open access
Semantic Scholar
1200 V-360 A SiC Power Module with Phase Leg Clustering Concept for Low Parasitic Inductance and High Speed Switching
K. Takao, T. Shinohe, Takashi Yamamoto, K. Hasegawa +1 more
201413 citations
Semantic Scholar
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
Y. Oshima, Hiroyuki Ando, T. Shinohe
2023Applied Physics Express12 citations Open access
Semantic Scholar
Mapping the interfacial reaction of α-Ga2O3 Schottky contacts through scanning internal photoemission microscopy
K. Shiojima, H. Kambara, T. Matsuda, T. Shinohe
2019Thin Solid Films12 citations
Semantic Scholar
Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)
Takuma Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda +2 more
200812 citations Open access
Semantic Scholar
Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe +3 more
200712 citations Open access
Semantic Scholar
Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
K. Adachi, C. M. Johnson, H. Ohashi, T. Shinohe +2 more
200112 citations Open access
Semantic Scholar
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Y. Oshima, Shingo Yagyu, T. Shinohe
2021Journal of Crystal Growth11 citations Open access
Semantic Scholar
VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers
C. Ota, J. Nishio, K. Takao, T. Shinohe
201411 citations Open access
Semantic Scholar
Hot-Implantation of Phosphorus Ions into 4H-SiC
S. Imai, Setsuko Kobayashi, T. Shinohe, K. Fukuda +5 more
200011 citations
Semantic Scholar
Analysis of Deep Traps in Mist Chemical Vapor Deposition‐Grown n‐Type α‐Ga2O3 by Photocapacitance Method
Hitoshi Takane, K. Kaneko, T. Shinohe, S. Fujita
2021physica status solidi (b)10 citations
Semantic Scholar
Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
T. Hatakeyama, J. Nishio, T. Shinohe
200510 citations Open access
Semantic Scholar
In-plane anisotropy in the direction of the dislocation bending in α-Ga2O3 grown by epitaxial lateral overgrowth
K. Kawara, T. Oshima, M. Okigawa, T. Shinohe
2020Applied Physics Express9 citations Open access
Semantic Scholar
Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
T. Hatakeyama, Takuma Suzuki, J. Senzaki, K. Fukuda +3 more
20089 citations Open access
Semantic Scholar
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
K. Adachi, Ichiro Omura, Rudi Ono, J. Nishio +3 more
20039 citations
Semantic Scholar
Demonstration of 25 W/cm3 class all-SiC three phase inverter
K. Takao, T. Shinohe
2011Proceedings of the 2011 14th European Conference on Power Electronics and Applications8 citations
Semantic Scholar
Development of Corundum-Structured Gallium Oxide Power Devices by MIST EPITAXY®
T. Shinohe
2018International Meeting for Future of Electron Devices, Kansai6 citations
Semantic Scholar
High-speed and low switching loss operation of 1700 V 60 A SiC MOSFETs installed in low parasitic inductance module
H. Kono, K. Takao, Takuma Suzuki, T. Shinohe
2014International Symposium on Power Semiconductor Devices and IC's6 citations
Semantic Scholar
Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
Takuma Suzuki, H. Yamaguchi, T. Hatakeyama, H. Matsuhata +4 more
20126 citations Open access
Semantic Scholar
High-power converters with high switching frequency operation using SiC-PiN diodes and Si-IEGTs
K. Takao, Yasunori Tanaka, Kyungmin Sung, K. Wada +3 more
20112011 1st International Conference on Electric Power Equipment - Switching Technology6 citations
Semantic Scholar
Cathodoluminescence study of m‐plane α‐Ga 2 O 3 grown by mist CVD
Ryota Moriya, J. Kikawa, S. Mouri, T. Shinohe +3 more
2022physica status solidi (b)5 citations
Semantic Scholar
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along ⟨1¯21¯0⟩
Y. Oshima, Shingo Yagyu, T. Shinohe
2021Journal of Applied Physics5 citations Open access
Semantic Scholar
High-frequency switching high-power converter with SiC-PiN diodes and Si-IEGTs
K. Takao, T. Shinohe, Yasunori Tanaka, H. Ohashi +3 more
20102010 IEEE Energy Conversion Congress and Exposition5 citations
Semantic Scholar
Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
T. Hatakeyama, C. Ota, J. Nishio, T. Shinohe
20065 citations Open access
Semantic Scholar
Uniformity characterization of SiC, GaN, and α-Ga2O3 Schottky contacts using scanning internal photoemission microscopy
K. Shiojima, Yuto Kawasumi, F. Horikiri, Y. Narita +3 more
2021Japanese Journal of Applied Physics4 citations Open access
Semantic Scholar

Frequent co-authors

Invite them to SciRah by sharing their profile.

T. Hatakeyama×17
Invite
T. Hatakeyama — researcher profile on SciRah
K. Takao×11
Invite
K. Takao — researcher profile on SciRah
K. Arai×10
Invite
K. Arai — researcher profile on SciRah
K. Fukuda×9
Invite
K. Fukuda — researcher profile on SciRah

×8

Invite

Y. Oshima — researcher profile on SciRah

Invite

J. Nishio — researcher profile on SciRah

Takuma Suzuki×8

Invite

Takuma Suzuki — researcher profile on SciRah

Invite

H. Ohashi — researcher profile on SciRah

Invite

J. Senzaki — researcher profile on SciRah

Invite

K. Kojima — researcher profile on SciRah

Invite

K. Kawara — researcher profile on SciRah

Yasunori Tanaka×6

Invite

Yasunori Tanaka — researcher profile on SciRah