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Longda Zhou · SciRah

Researcher profile · Semantic Scholar

Longda Zhou

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Longda Zhou — researcher profile on SciRah

h-index: 7
Works: 38
Citations: 180

Most-cited papers

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation
Longda Zhou, Jie Li, Zheng Qiao, Peng-Peng Ren +7 more
2023IEEE International Reliability Physics Symposium25 citations
Semantic Scholar
Understanding the Competitive Interaction in Leakage Mechanisms for Effective Row Hammer Mitigation in Sub-20 nm DRAM
Jie Li, Longda Zhou, Sheng Ye, Zheng Qiao +1 more
2024IEEE Electron Device Letters17 citations
Semantic Scholar
Unveiling RowPress in Sub-20 nm DRAM Through Comparative Analysis With Row Hammer: From Leakage Mechanisms to Key Features
Longda Zhou, Sheng Ye, Run-Sheng Wang, Zhi-Gang Ji
2024IEEE Transactions on Electron Devices16 citations
Semantic Scholar
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM
Longda Zhou, Jie Li, Peng-Peng Ren, Sheng Ye +3 more
2024IEEE International Reliability Physics Symposium12 citations
Semantic Scholar
Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs
Hong Yang, Wei-Chun Luo, Longda Zhou, Hao Xu +7 more
2018IEEE Electron Device Letters10 citations
Semantic Scholar
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization
Yong Liu, Da Wang, Peng-Peng Ren, Jie Li +12 more
2024IEEE Transactions on Electron Devices7 citations
Semantic Scholar
Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage
Hao Chang, Qianqian Liu, Hong Yang, Longda Zhou +8 more
2023IEEE Electron Device Letters7 citations
Semantic Scholar
New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology
Yong Liu, Peng-Peng Ren, Da Wang, Longda Zhou +4 more
2022IEEE International Reliability Physics Symposium7 citations
Semantic Scholar
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs
Hao Chang, Longda Zhou, Hong Yang, Z. Ji +4 more
2021IEEE International Reliability Physics Symposium7 citations
Semantic Scholar
Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs
Longda Zhou, Bo Tang, Hong Yang, Hao Xu +8 more
2018International Symposium on the Physical and Failure Analysis of Integrated Circuits7 citations
Semantic Scholar
Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs
Longda Zhou, Qing-Zhu Zhang, Hong Yang, Z. Ji +12 more
2020IEEE Electron Device Letters5 citations
Semantic Scholar
A Comparative Study of TiN Thickness Scaling Impact on DC and AC NBTI Kinetics in Replacement Metal Gate pMOSFETs
Longda Zhou, Qianqian Liu, Z. Ji, Hong Yang +5 more
2019International Integrated Reliability Workshop5 citations
Semantic Scholar
Dependence of Short Channel Length on Negative/Positive Bias Temperature Instability (NBTI/PBTI) for 3D FinFET Devices
Ren-Ren Xu, Qing-Zhu Zhang, Longda Zhou, Hong Yang +3 more
2021Chinese Physics B4 citations
Semantic Scholar
Degradation Mechanism of Short Channel p- FinFETs under Hot Carrier Stress and Constant Voltage Stress
Hao Chang, Longda Zhou, Hong Yang, Z. Ji +5 more
2020International Symposium on the Physical and Failure Analysis of Integrated Circuits4 citations
Semantic Scholar
Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal
Longda Zhou, Guilei Wang, Xiao-Gen Yin, Z. Ji +13 more
20204 citations
Semantic Scholar
Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFETs
Yunfei Shi, Hao Chang, Hong Yang, Qiang Zhang +11 more
2025IEEE Journal of the Electron Devices Society3 citations Open access
Semantic Scholar
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node—Part I: Defect-Based Statistical Compact Model
Yong Liu, Da Wang, Peng-Peng Ren, Jie Li +12 more
2024IEEE Transactions on Electron Devices3 citations
Semantic Scholar
On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology
Da Wang, Longda Zhou, Yong-Kang Xue, Peng-Peng Ren +7 more
2023IEEE Electron Device Letters3 citations
Semantic Scholar
Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation
Zixuan Sun, Puyang Cai, Jiahao Song, Da Wang +12 more
2023International Electron Devices Meeting3 citations
Semantic Scholar
Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition
Da Wang, Longda Zhou, Yong-Kang Xue, Peng-Peng Ren +9 more
2022IEEE Transactions on Electron Devices3 citations
Semantic Scholar
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies
Da Wang, Y. Liu, Peng-Peng Ren, Longda Zhou +4 more
2022IEEE International Reliability Physics Symposium3 citations
Semantic Scholar
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs
Longda Zhou, Zhao-Hao Zhang, Hong Yang, Z. Ji +8 more
2021IEEE International Reliability Physics Symposium3 citations
Semantic Scholar
Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique
Longda Zhou, Qing-Zhu Zhang, Hong Yang, Zhi-Gang Ji +10 more
2021IEEE Transactions on Electron Devices3 citations
Semantic Scholar
Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs
Longda Zhou, Qianqian Liu, Hong Yang, Z. Ji +12 more
2020IEEE transactions on device and materials reliability3 citations
Semantic Scholar
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs
Longda Zhou, Qing-Zhu Zhang, Hong Yang, Z. Ji +4 more
2020IEEE International Reliability Physics Symposium3 citations
Semantic Scholar
An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method
Longda Zhou, Yong-Liang Li, Hua-Xiang Yin, A. Du +10 more
2020IEEE transactions on device and materials reliability3 citations
Semantic Scholar
Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs
Longda Zhou, Qing-Zhu Zhang, Hong Yang, Z. Ji +5 more
2020International Symposium on the Physical and Failure Analysis of Integrated Circuits3 citations
Semantic Scholar
Understanding of GIDL-State Degradation (GSD): The Reliability Challenge in pFET Standby Mode for Sub-20-nm DRAM Technology
Da Wang, Yong Liu, Longda Zhou, Yong-Kang Xue +4 more
2025IEEE Electron Device Letters2 citations
Semantic Scholar
Improved Positive Bias Temperature Instability of n-type Vertical C-Shaped-Channel Nanosheet FET by Forming Gas Annealing
Yunfei Shi, Songyi Jiang, Hong Yang, Yong-Kui Zhang +7 more
2024International Symposium on the Physical and Failure Analysis of Integrated Circuits1 citations
Semantic Scholar
Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
Ren-Ren Xu, Qing-Zhu Zhang, Longda Zhou, Hong Yang +3 more
20221 citations
Semantic Scholar
Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs
Hao Chang, Yong-Kui Zhang, Longda Zhou, Z. Ji +8 more
2021International Symposium on the Physical and Failure Analysis of Integrated Circuits1 citations
Semantic Scholar
Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
Longda Zhou, Qianqian Liu, Hong Yang, Z. Ji +11 more
2021IEEE Journal of the Electron Devices Society1 citations Open access
Semantic Scholar
Comparison of NBTI kinetics in RMG Si p-FinFETs featuring Atomic Layer Deposition Tungsten (ALD W) Filling Metal Using B2H6 and SiH4 Precursors
Longda Zhou, Ying Luo, E. Simoen, Hong Yang +14 more
2019International Symposium on the Physical and Failure Analysis of Integrated Circuits1 citations
Semantic Scholar
A Slope Method for Critical-Region Defect-Center Localization in LDMOS under Hot-Carrier Degradation
Longda Zhou, Sheng Ye, Zhi-Gang Ji, Xing Wu
2026IEEE International Reliability Physics Symposium0 citations
Semantic Scholar
Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena
Hao-Cong Luo, Longda Zhou, Ataberk Olgun, Ismail Emir Yüksel +4 more
2026arXiv.org0 citations
Semantic Scholar
Direct Visualization of Width-Induced Strain Variation in GAA Nanosheets at the Atomic Scale
Lan Li, R. Bi, Chao Yan, Zuo-Yuan Dong +7 more
2026IEEE International Reliability Physics Symposium0 citations
Semantic Scholar
Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED
Shiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan +6 more
2024IEEE International Reliability Physics Symposium0 citations
Semantic Scholar
Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique
Hao Chang, Guilei Wang, Hong Yang, Qianqian Liu +10 more
2023Nanomaterials0 citations Open access
Semantic Scholar

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