Ren-Ren Xu

Most-cited papers

1. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices

   Qing-Zhu Zhang, Jie Gu, Ren-Ren Xu, Lei Cao +15 more

   2021Nanomaterials68 citations Open access

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2. Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

   Yanna Luo, Qing-Zhu Zhang, Lei Cao, Weizhuo Gan +8 more

   2022IEEE Transactions on Electron Devices25 citations

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3. Flexible Hotspot Detection Based on Fully Convolutional Network With Transfer Learning

   Tianyang Gai, Tong Qu, Shu-Han Wang, Xiao-Jing Su +6 more

   2022IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems22 citations

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4. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

   Jie Gu, Qing-Zhu Zhang, Zhen-Hua Wu, Jiaxin Yao +13 more

   2021Nanomaterials21 citations Open access

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5. Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALD

   Ren-Ren Xu, Jiaxin Yao, Gao-Bo Xu, Yan-Yi Wei +11 more

   2022IEEE Transactions on Electron Devices16 citations

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6. Endurance Characteristics of Negative Capacitance FinFETs With Negligible Hysteresis

   Yu-Wei Cai, Qin-Zhu Zhang, Zhao-Hao Zhang, Gao-Bo Xu +10 more

   2021IEEE Electron Device Letters8 citations

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7. Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

   Jie Gu, Zhen-Hua Wu, Qin-Zhu Zhang, Jiaxin Yao +9 more

   2021IEEE Transactions on Electron Devices6 citations

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8. Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

   Qing-Zhu Zhang, H. Tu, Zhao-Hao Zhang, Jun-Jie Li +18 more

   20216 citations

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9. Dependence of Short Channel Length on Negative/Positive Bias Temperature Instability (NBTI/PBTI) for 3D FinFET Devices

   Ren-Ren Xu, Qing-Zhu Zhang, Longda Zhou, Hong Yang +3 more

   2021Chinese Physics B4 citations

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10. Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs

    Longda Zhou, Qing-Zhu Zhang, Hong Yang, Z. Ji +4 more

    2020IEEE International Reliability Physics Symposium3 citations

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11. Impact of Electron trapping on Energy Distribution Characterization of NBTI-Related Defects for Si p-FinFETs

    Longda Zhou, Qing-Zhu Zhang, Hong Yang, Z. Ji +5 more

    2020International Symposium on the Physical and Failure Analysis of Integrated Circuits3 citations

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12. Self-aligned metallic source and drain fin-on-insulator FinFETs with excellent short channel effects immunity down to 20 nm gate length

    Qing-Zhu Zhang, Jun-Jie Li, H. Tu, H. Yi +25 more

    2018China Semiconductor Technology International Conference2 citations

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13. Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

    Ren-Ren Xu, Qing-Zhu Zhang, Longda Zhou, Hong Yang +3 more

    20221 citations

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14. Experimental Investigation of Ultra-Low Temperature LA2O3/HFO2 Bi-Layer Dipole-First Process Using PVD Method for Advanced IC Technology

    Yanzhao Wei, Jiaxin Yao, Ren-Ren Xu, Qing-Zhu Zhang +1 more

    2023China Semiconductor Technology International Conference0 citations

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