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S. Inaba · SciRah

Researcher profile · Semantic Scholar

S. Inaba

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S. Inaba — researcher profile on SciRah

h-index: 10
Works: 36
Citations: 311

Most-cited papers

Analyses of 5σ Vth fluctuation in 65nm-MOSFETs using takeuchi plot
T. Tsunomura, A. Nishida, F. Yano, A. T. Putra +6 more
2008Symposium on VLSI Technology65 citations
Semantic Scholar
Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG
X. Song, Makoto Suzuki, T. Saraya, A. Nishida +6 more
2010International Electron Devices Meeting35 citations
Semantic Scholar
Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method
T. Tsunomura, Ashok Kumar, T. Mizutani, Cheng-Kuo Lee +7 more
2010Symposium on VLSI Technology30 citations
Semantic Scholar
Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs
T. Hiramoto, T. Mizutani, Ashok Kumar, A. Nishida +5 more
2010International SOI Conference19 citations
Semantic Scholar
Analysis of extra VT variability sources in NMOS using Takeuchi plot
T. Tsunomura, A. Nishida, F. Yano, A. T. Putra +7 more
2006Symposium on VLSI Technology18 citations
Semantic Scholar
3D Flash Memory for Data-Intensive Applications
S. Inaba
2018International Memory Workshop15 citations
Semantic Scholar
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
T. Tsunomura, Anil Kumar, T. Mizutani, A. Nishida +6 more
201014 citations Open access
Semantic Scholar
High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
T. Tsunomura, Anil Kumar, T. Mizutani, A. Nishida +6 more
201112 citations Open access
Semantic Scholar
Origin of “current-onset voltage” variability in scaled MOSFETs
Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura +6 more
20102010 Silicon Nanoelectronics Workshop12 citations
Semantic Scholar
Inverter performance of 0.10 /spl mu/m CMOS operating at room temperature
S. Inaba, T. Mizuno, M. Iwase, M. Takahashi +4 more
199412 citations
Semantic Scholar
Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor
T. Izumida, K. Okano, Takahisa Kanemura, M. Kondo +4 more
201110 citations Open access
Semantic Scholar
Suppression of VT variability degradation induced by NBTI with RDF control
T. Tsunomura, J. Nishimura, Ashok Kumar, A. Nishida +4 more
2011Symposium on VLSI Technology9 citations
Semantic Scholar
Increase of parasitic resistance in shallow p/sup +/ extension by SiN sidewall process and its improvement by Ge preamorphization for sub-0.25-/spl mu/m pMOSFET's
S. Inaba, A. Murakoshi, M. Tanaka, H. Yoshimura +2 more
19999 citations
Semantic Scholar
Nitrogen-induced transient enhanced diffusion of dopants
C. Murthy, Kilho Lee, R. Rengarajan, O. Dokumaci +3 more
20028 citations
Semantic Scholar
Statistic characteristics of “current-onset voltage” in scaled MOSFETs analyzed by 8k DMA TEG
T. Mizutani, Ashok Kumar, T. Tsunomura, A. Nishida +5 more
20102010 Silicon Nanoelectronics Workshop6 citations
Semantic Scholar
High Speed 0.1 μm CMOS Devices Operating at Room Temperature
A. Toriumi, T. Mizuno, M. Iwase, M. Takahashi +5 more
19926 citations
Semantic Scholar
Threshold voltage roll-up/roll-off characteristic control in sub-0.2-/spl mu/m single workfunction gate CMOS for high-performance DRAM applications
S. Inaba, R. Katsumata, H. Akatsu, R. Rengarajan +4 more
20025 citations
Semantic Scholar
Special Section on Analog Circuits and Related SoC Integration Technologies Technology of FinFET for High RF and Analog / Mixed-Signal Performance Circuits
T. Ohguro, S. Inaba, A. Kaneko, K. Okano
20154 citations
Semantic Scholar
Thermal-Annealing Effects on Dopant Redistribution in Nanoscale Si Fin
T. Izumida, K. Okano, Takahisa Kanemura, M. Kondo +4 more
20114 citations Open access
Semantic Scholar
Process Condition Dependence of Random V T Variability in NFETs and PFETs
T. Tsunomura, A. Nishida, Kiyoshi Takeuchi, S. Inaba +4 more
20094 citations
Semantic Scholar
A new methodology for evaluating VT variability considering dopant depth profile
A. T. Putra, Takaaki Tsunomura, A. Nishida, Shiro Kamohara +4 more
2006Symposium on VLSI Technology4 citations
Semantic Scholar
Palladium incorporated nickel silicide for a cost effective alternative salicide technology for scaled CMOS
Y. Nishi, T. Sonehara, A. Hokazono, S. Kawanaka +2 more
2010Proceedings of 2010 International Symposium on VLSI Technology, System and Application3 citations
Semantic Scholar
Impact of Contact Resistance and Junction Capacitance on the Switching Performance in Scaled 0.1μm CMOS Devices
S. Inaba, T. Mizuno, M. Iwase, H. Niiyama +2 more
19933 citations
Semantic Scholar
Scaled CMOS with SiON and High-k
K. Ishimaru, M. Takayanagi, T. Watanabe, S. Inaba +2 more
20062 citations
Semantic Scholar
Error evaluation of C-V characteristic measurements in ultra-thin gate dielectrics
H. Suto, S. Inaba, K. Ishimaru
2004Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)2 citations
Semantic Scholar
Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
K. Anil, T. Mizutani, A. Nishida, Kiyoshi Takeuchi +5 more
20110 citations
Semantic Scholar
Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
T. Mizutani, K. Anil, A. Nishida, Kiyoshi Takeuchi +5 more
20110 citations
Semantic Scholar
High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs
T. Tsunomura, Anil Kumar, T. Mizutani, A. Nishida +6 more
20100 citations
Semantic Scholar
Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET
T. Izumida, K. Okano, Takahisa Kanemura, M. Kondo +4 more
20100 citations
Semantic Scholar
Impact of Transistor Layout Configuration on Current Drive Performance in (100)/ and (100)/ SiGe channel pMOSFETs: Comparative Study to Si channel
Keisuke Nakatsuka, H. Okamoto, H. Itokawa, K. Okano +8 more
20100 citations
Semantic Scholar
Analysis of V th Fluctuation at High Temperature using Takeuchi Plot
T. Tsunomura, A. Nishida, Kiyoshi Takeuchi, S. Inaba +5 more
20080 citations
Semantic Scholar
Direct evaluation ofDCcharacteristic variability inFinFETSRAMCell for32nmnodeandbeyond
S. Inaba, H. Kawasaki, K. Okano, T. Izumida +2 more
20070 citations
Semantic Scholar
Impact ofBOXScaling on30nm GateLength FDSOIMOSFETs
M. Fujiwara, T. Morooka, Nobuaki Yasutake, K. Ohuchi +6 more
20050 citations
Semantic Scholar
SESSION 9 Advanced Transistor Technology II
H. Wakabayashi, Nobuaki Yasutake, K. Ohuchi, M. Fujiwara +36 more
20040 citations
Semantic Scholar
Threshold-voltage anomaly in sub-0.2 /spl mu/m DRAM buried-channel pFET devices
C. Murthy, R. Katsumata, S. Inaba, R. Rengarajan +2 more
20012001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)0 citations
Semantic Scholar
Insulating means (IG) device having a structure having a source with a narrow band gap, and processes for their preparation
M. Aoki, O. Arisumi, T. Hamamoto, S. Inaba +10 more
19950 citations
Semantic Scholar

Frequent co-authors

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A. Nishida×16
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A. Nishida — researcher profile on SciRah
T. Tsunomura×13
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T. Tsunomura — researcher profile on SciRah
T. Hiramoto×11
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T. Hiramoto — researcher profile on SciRah
S. Kamohara×10
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×9

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T. Mizutani — researcher profile on SciRah

Kiyoshi Takeuchi×8

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Kiyoshi Takeuchi — researcher profile on SciRah

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T. Mogami — researcher profile on SciRah

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K. Okano — researcher profile on SciRah

Kazuo Terada×5

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Kazuo Terada — researcher profile on SciRah

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T. Hiramoto — researcher profile on SciRah

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Ashok Kumar — researcher profile on SciRah