Skip to content

Home Search Authors Pakistan News Saved

SciRah

SciRah does not host or store research papers. Results come live from free, official scholarly APIs, and every paper links back to its original source.

Data sources

OpenAlex
Semantic Scholar
Crossref
CORE
arXiv
PubMed

Privacy policy Terms of service

E. Capogreco · SciRah

Researcher profile · Semantic Scholar

E. Capogreco

Share profile

E. Capogreco — researcher profile on SciRah

h-index: 13
Works: 50
Citations: 504

Most-cited papers

First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers
S. Subramanian, M. Hosseini, T. Chiarella, S. Sarkar +28 more
20202020 IEEE Symposium on VLSI Technology119 citations
Semantic Scholar
First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs
E. Capogreco, L. Witters, H. Arimura, F. Sebaai +20 more
2018IEEE Transactions on Electron Devices42 citations
Semantic Scholar
Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling
Anshul Gupta, O. Pedreira, G. Arutchelvan, H. Zahedmanesh +53 more
2020IEEE Transactions on Electron Devices34 citations
Semantic Scholar
Analysis of performance/variability trade-off in Macaroni-type 3-D NAND memory
G. Congedo, A. Arreghini, Lifang Liu, E. Capogreco +8 more
2014International Memory Workshop21 citations
Semantic Scholar
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
A. Subirats, A. Arreghini, E. Capogreco, R. Delhougne +8 more
2017International Electron Devices Meeting20 citations
Semantic Scholar
Laser thermal anneal of polysilicon channel to boost 3D memory performance
J. Lisoni, A. Arreghini, G. Congedo, M. Toledano-Luque +8 more
2014Symposium on VLSI Technology19 citations
Semantic Scholar
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node
Anshul Gupta, H. Mertens, Z. Tao, S. Demuynck +53 more
20202020 IEEE Symposium on VLSI Technology17 citations
Semantic Scholar
Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model
R. Degraeve, M. Toledano-Luque, A. Arreghini, Bao-Jun Tang +7 more
20132013 IEEE International Electron Devices Meeting17 citations
Semantic Scholar
Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
H. Arimura, G. Eneman, E. Capogreco, L. Witters +11 more
2018International Electron Devices Meeting16 citations
Semantic Scholar
Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
A. Vohra, C. Porret, D. Kohen, S. Folkersma +9 more
2019Japanese Journal of Applied Physics15 citations Open access
Semantic Scholar
Toward high-performance and reliable Ge channel devices for 2 nm node and beyond
H. Arimura, E. Capogreco, A. Vohra, C. Porret +10 more
2020International Electron Devices Meeting14 citations
Semantic Scholar
MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory
E. Capogreco, J. Lisoni, A. Arreghini, A. Subirats +8 more
2015International Electron Devices Meeting14 citations
Semantic Scholar
TEM investigations of gate-all-around nanowire devices
Paola Favia, Olivier Richard, G. Eneman, H. Mertens +8 more
2019Semiconductor Science and Technology13 citations Open access
Semantic Scholar
Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications
E. Capogreco, R. Degraeve, J. Lisoni, V. Luong +7 more
2015International Memory Workshop13 citations
Semantic Scholar
High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG
E. Capogreco, H. Arimura, L. Witters, A. Vohra +22 more
2019Symposium on VLSI Technology11 citations
Semantic Scholar
A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
H. Arimura, D. Cott, G. Boccardi, R. Loo +16 more
2019Symposium on VLSI Technology11 citations
Semantic Scholar
An In-depth Study of High-Performing Strained Germanium Nanowires pFETs
Jérôme Mitard, Doyoung Jang, G. Eneman, H. Arimura +17 more
20182018 IEEE Symposium on VLSI Technology11 citations
Semantic Scholar
First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs
E. Capogreco, L. Witters, H. Arimura, F. Sebaai +20 more
20182018 IEEE Symposium on VLSI Technology11 citations
Semantic Scholar
FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits
E. Capogreco, H. Arimura, R. Ritzenthaler, S. Brus +18 more
2022International Electron Devices Meeting9 citations
Semantic Scholar
Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs
S. Tyaginov, A. Grill, A. De Keersgieter, G. Eneman +10 more
2019International Electron Devices Meeting9 citations
Semantic Scholar
Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
A. Peter, Takayama Tomomi, Ebisudani Taishi, Shiba Eiichiro +18 more
2021Journal of Vacuum Science and Technology8 citations Open access
Semantic Scholar
Feasibility of InxGa1–xAs High Mobility Channel for 3-D NAND Memory
E. Capogreco, A. Subirats, J. Lisoni, A. Arreghini +8 more
2017IEEE Transactions on Electron Devices8 citations
Semantic Scholar
80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications
A. Spessot, R. Ritzenthaler, E. Litta, E. Dupuy +8 more
2021Japanese Journal of Applied Physics7 citations Open access
Semantic Scholar
Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
H. Arimura, Jérôme Mitard, S. Demuynck, N. Horiguchi +8 more
2019International Electron Devices Meeting7 citations
Semantic Scholar
Buried power rail integration for CMOS scaling beyond the 3 nm node
A. Gupta, Z. Tao, D. Radisic, H. Mertens +32 more
2022Advanced Lithography6 citations
Semantic Scholar
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
N. Collaert, A. Alian, B. De Jaeger, Uthayasankararan Peralagu +17 more
2019Advanced Lithography6 citations
Semantic Scholar
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
J. Bastos, B. O'Sullivan, J. Franco, S. Tyaginov +13 more
2022IEEE International Reliability Physics Symposium5 citations
Semantic Scholar
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-cap-free Gate Stack and Optimizing the Channel Strain
H. Arimura, E. Capogreco, Kurt Wostyn, G. Eneman +10 more
20202020 IEEE Symposium on VLSI Technology5 citations
Semantic Scholar
Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels
U. Celano, E. Capogreco, J. Lisoni, A. Arreghini +7 more
20162016 IEEE Symposium on VLSI Technology5 citations
Semantic Scholar
Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery application
A. Spessot, P. Matagne, Hiroaki Arimura, J. Ganguly +6 more
2023Japanese Journal of Applied Physics4 citations
Semantic Scholar
Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations
A. Spessot, S. Salahuddin, Ricardo Escobar, R. Ritzenthaler +7 more
2022International Memory Workshop3 citations
Semantic Scholar
DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM
J. Ganguly, Hiroaki Arimura, R. Ritzenthaler, H. Bana +12 more
20242024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)2 citations
Semantic Scholar
Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor
R. Sarkar, R. Ritzenthaler, J. Everaert, P. Eyben +13 more
2024International Electron Devices Meeting2 citations
Semantic Scholar
High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories
R. Ritzenthaler, E. Capogreco, E. Dupuy, H. Arimura +18 more
20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)2 citations
Semantic Scholar
Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
A. Subirats, E. Capogreco, R. Degraeve, A. Arreghini +4 more
2016IEEE International Reliability Physics Symposium2 citations
Semantic Scholar
Source/Drain Materials for Ge nMOS Devices
A. Vohra, C. Porret, E. Rosseel, A. Hikavyy +4 more
2019ECS Transactions1 citations
Semantic Scholar
Understanding the intrinsic reliability behavior of $\boldsymbol{n}$ -/$\boldsymbol{p}$-Si and $\boldsymbol{p}$-Ge nanowire FETs utilizing degradation maps
A. Chasin, E. Bury, J. Franco, B. Kaczer +8 more
2018International Electron Devices Meeting1 citations
Semantic Scholar
Optimization of vertically stacked n-NSFET combining experimental access re-sistance extraction and TCAD analysis.
Pierre Eyben, A. De Keersgieter, Maryam Hosseini, A. Pondini +7 more
2026Extended Abstracts of the 2026 International Conference on Solid State Devices and Materials0 citations
Semantic Scholar
Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics
J. Bastos, B. O'Sullivan, Y. Higashi, A. Chasin +6 more
2024IEEE International Reliability Physics Symposium0 citations
Semantic Scholar
Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study
C. Cavalcante, H. Arimura, Y. Oniki, F. Sebaai +10 more
2023Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials0 citations
Semantic Scholar
NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs
D. Xie, E. Simoen, H. Arimura, E. Capogreco +2 more
2022IEEE Transactions on Electron Devices0 citations Open access
Semantic Scholar
80nm Tall Thermally Stable Cost Effective FinFETs for Advanced DRAM Periphery Devices for AI/ML and Automotive Applications
A. Spessot, R. Ritzenthaler, E. Litta, E. Dupuy +8 more
2020Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials0 citations
Semantic Scholar
QUANTITATIVE CATHODOLUMINESCENCE FOR ACADEMIA AND INDUSTRY
H. Arimura, E. Capogreco, G. Eneman, A. Hikavyy +8 more
20190 citations
Semantic Scholar
Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices
R. Loo, A. Vohra, C. Porret, A. Hikavyy +7 more
20192019 Compound Semiconductor Week (CSW)0 citations
Semantic Scholar
Ge:B and GeSn:B Low Temperature Selective Epitaxial Growth Schemes for Source/Drain layers in Ge pMOS devices
A. Vohra, C. Porret, D. Kohen, S. Folkersma +9 more
2018Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials0 citations
Semantic Scholar
Alternative Channel Materials for 3-D NAND Memories
E. Capogreco
20170 citations
Semantic Scholar
Investigation of conduction variability in MOVPE In1-xGaxAs channels for vertical NAND memory
E. Capogreco, A. Arreghini, J. Lisoni, B. Kunert +5 more
20160 citations
Semantic Scholar
Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications
E. Capogreco, R. Degraeve, J. Lisoni, V. Luong +7 more
2015International Memory Workshop0 citations
Semantic Scholar
SiGe channel formation for 3D vertical channel transistor applications
E. Capogreco, J. Lisoni, A. Hikavyy, A. Arreghini +6 more
20140 citations
Semantic Scholar
Electrical and physical characterization of Polycrystalline III-V compounds
E. Capogreco, J. Lisoni, C. Merckling, T. Numata +4 more
20140 citations
Semantic Scholar

Frequent co-authors

Invite them to SciRah by sharing their profile.

A. Hikavyy×16
Invite
A. Hikavyy — researcher profile on SciRah
H. Arimura×14
Invite
H. Arimura — researcher profile on SciRah
E. Litta×13
Invite
E. Litta — researcher profile on SciRah
L. Witters×13
Invite
L. Witters — researcher profile on SciRah

×13

Invite

A. Arreghini — researcher profile on SciRah

G. van Den Bosch×13

Invite

G. van Den Bosch — researcher profile on SciRah

J. van Houdt×12

Invite

J. van Houdt — researcher profile on SciRah

Invite

F. Sebaai — researcher profile on SciRah

R. Ritzenthaler×11

Invite

R. Ritzenthaler — researcher profile on SciRah

N. Horiguchi×11

Invite

N. Horiguchi — researcher profile on SciRah

Invite

J. Lisoni — researcher profile on SciRah

Invite

A. Spessot — researcher profile on SciRah