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R. Degraeve · SciRah

Researcher profile · Semantic Scholar

R. Degraeve

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R. Degraeve — researcher profile on SciRah

h-index: 43
Works: 326
Citations: 8,907

Most-cited papers

Intrinsic switching variability in HfO2 RRAM
A. Fantini, L. Goux, R. Degraeve, D. Wouters +6 more
20132013 5th IEEE International Memory Workshop197 citations
Semantic Scholar
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory.
U. Celano, L. Goux, R. Degraeve, A. Fantini +4 more
2015Nano letters (Print)176 citations
Semantic Scholar
Causes and consequences of the stochastic aspect of filamentary RRAM
R. Degraeve, A. Fantini, N. Raghavan, L. Goux +5 more
2015125 citations
Semantic Scholar
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
Yang-Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu +11 more
20132013 IEEE International Electron Devices Meeting109 citations
Semantic Scholar
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS
K. Chuang, E. Bury, R. Degraeve, B. Kaczer +2 more
2019IEEE Journal of Solid-State Circuits82 citations Open access
Semantic Scholar
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices.
U. Celano, L. Goux, A. Belmonte, K. Opsomer +4 more
2015Journal of Physical Chemistry Letters67 citations
Semantic Scholar
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
S. Clima, Yang-Yin Chen, Chao-Yang Chen, L. Goux +5 more
201645 citations Open access
Semantic Scholar
RRAMs based on anionic and cationic switching: a short overview
S. Clima, K. Sankaran, Yang-Yin Chen, A. Fantini +11 more
201441 citations
Semantic Scholar
Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells
C.-Y. Chen, L. Goux, A. Fantini, S. Clima +5 more
201540 citations
Semantic Scholar
Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
T. Ravsher, D. Garbin, A. Fantini, R. Degraeve +9 more
2023IEEE Transactions on Electron Devices34 citations Open access
Semantic Scholar
Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability
A. Belmonte, R. Degraeve, A. Fantini, W. Kim +3 more
201433 citations
Semantic Scholar
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
K. Florent, A. Subirats, S. Lavizzari, R. Degraeve +6 more
2018IEEE International Reliability Physics Symposium31 citations
Semantic Scholar
GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator
Z. Chai, P. Freitas, J. Marsland, A. Fantini +11 more
2020IEEE Electron Device Letters30 citations
Semantic Scholar
Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors
Z. Chai, W. Zhang, R. Degraeve, S. Clima +8 more
2019Symposium on VLSI Technology29 citations
Semantic Scholar
Sub-10 nm low current resistive switching behavior in hafnium oxide stack
Yi Hou, U. Celano, L. Goux, Lei Liu +8 more
201629 citations
Semantic Scholar
Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells
L. Goux, A. Fantini, Yang-Yin Chen, A. Redolfi +2 more
201429 citations Open access
Semantic Scholar
Polarity‐induced threshold voltage shift in ovonic threshold switching chalcogenides and the impact of material composition
T. Ravsher, D. Garbin, A. Fantini, R. Degraeve +9 more
2023Physica Status Solidi (a)28 citations Open access
Semantic Scholar
Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
T. Ravsher, R. Degraeve, D. Garbin, A. Fantini +9 more
2021International Electron Devices Meeting28 citations Open access
Semantic Scholar
Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters
S. Clima, T. Ravsher, D. Garbin, R. Degraeve +4 more
2022ACS Applied Electronic Materials27 citations
Semantic Scholar
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
L. Goux, N. Raghavan, A. Fantini, R. Nigon +7 more
201427 citations
Semantic Scholar
Programming-conditions solutions towards suppression of retention tails of scaled oxide-based RRAM
C.-Y. Chen, A. Fantini, L. Goux, R. Degraeve +4 more
2015International Electron Devices Meeting26 citations
Semantic Scholar
The defect-centric perspective of device and circuit reliability — From individual defects to circuits
B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel +11 more
2015European Solid-State Device Research Conference26 citations
Semantic Scholar
Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors
Z. Chai, Wei-Dong Zhang, R. Degraeve, S. Clima +8 more
2019IEEE Electron Device Letters25 citations Open access
Semantic Scholar
Scalability of valence change memory: From devices to tip-induced filaments
U. Celano, A. Fantini, R. Degraeve, M. Jurczak +2 more
201625 citations Open access
Semantic Scholar
Modeling and spectroscopy of ovonic threshold switching defects
R. Degraeve, Taras Ravsher, Shoichi Kabuyanagi, A. Fantini +3 more
2021IEEE International Reliability Physics Symposium24 citations
Semantic Scholar
The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
B. Kaczer, J. Franco, P. Weckx, P. Roussel +15 more
201622 citations
Semantic Scholar
Physically unclonable function using CMOS breakdown position
K. Chuang, E. Bury, R. Degraeve, B. Kaczer +3 more
2017IEEE International Reliability Physics Symposium21 citations Open access
Semantic Scholar
A multi-bit/cell PUF using analog breakdown positions in CMOS
K. Chuang, E. Bury, R. Degraeve, B. Kaczer +4 more
2018IEEE International Reliability Physics Symposium19 citations Open access
Semantic Scholar
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability
J. Diaz-Fortuny, P. Saraza-Canflanca, E. Bury, M. Vandemaele +2 more
2022IEEE International Reliability Physics Symposium18 citations Open access
Semantic Scholar
TID and Displacement Damage Resilience of 1T1R
S. Weeden-Wright, W. Bennett, Nicholas C. Hooten, Xia E. Zhang +12 more
201418 citations
Semantic Scholar
Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices
E. Bury, R. Degraeve, Ju-Cho Moon, B. Kaczer +4 more
2014International Symposium on the Physical and Failure Analysis of Integrated Circuits17 citations
Semantic Scholar
Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy
Yi Hou, U. Celano, L. Goux, Lei Liu +5 more
201616 citations
Semantic Scholar
TID and Displacement Damage Resilience of 1T1R ${\rm HfO}_2/{\rm Hf}$ Resistive Memories
S. Weeden-Wright, W. Bennett, Nicholas C. Hooten, En Zhang +12 more
2014IEEE Transactions on Nuclear Science16 citations
Semantic Scholar
Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits
David Coenen, H. Oprins, R. Degraeve, I. De Wolf
2023IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems15 citations Open access
Semantic Scholar
First-principles study of oxygen and aluminum defects in β-Si3N4: Compensation and charge trapping
M. Grillo, S. Elliott, Jesús Rodríguez, Rafael Añez +8 more
201415 citations Open access
Semantic Scholar
Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent \(V_{\rm TH}\) Variability
M. Toledano-Luque, R. Degraeve, P. Roussel, L. Ragnarsson +4 more
2014IEEE Transactions on Electron Devices15 citations
Semantic Scholar
Role of the anode material in the unipolar switching of TiN\NiO\Ni cells
L. Goux, R. Degraeve, J. Meersschaut, B. Govoreanu +3 more
201315 citations
Semantic Scholar
Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress
Kookjin Lee, B. Kaczer, Anastasiia Kruv, Mario Gonzalez +4 more
2021IEEE Electron Device Letters13 citations
Semantic Scholar
Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications
E. Capogreco, R. Degraeve, J. Lisoni, V. Luong +7 more
2015International Memory Workshop13 citations
Semantic Scholar
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode
T. Ravsher, D. Garbin, A. Fantini, R. Degraeve +9 more
20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)12 citations Open access
Semantic Scholar
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Ji-Gang Ma, Z. Chai, Wei-Dong Zhang, Jian-Fu Zhang +5 more
2019IEEE Transactions on Electron Devices12 citations Open access
Semantic Scholar
Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution
Ji-Gang Ma, Z. Chai, Wei-Dong Zhang, Jian-Fu Zhang +9 more
2018IEEE Transactions on Electron Devices12 citations Open access
Semantic Scholar
Kinetic defect distribution approach for modeling the transient, endurance and retention of a-VMCO RRAM
S. Subhechha, R. Degraeve, P. Roussel, L. Goux +4 more
2017IEEE International Reliability Physics Symposium12 citations
Semantic Scholar
Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Bao-Jun Tang, M. Toledano-Luque, Wei-Dong Zhang, G. van Den Bosch +3 more
201312 citations
Semantic Scholar
Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation
J. Diaz-Fortuny, D. Sangani, P. Saraza-Canflanca, E. Bury +2 more
2023IEEE International Reliability Physics Symposium11 citations
Semantic Scholar
Understanding the Cycling-Dependent Threshold Voltage Instability in OTS Devices
M. Yamaguchi, R. Degraeve, D. Garbin, S. Clima +6 more
2022International Electron Devices Meeting10 citations Open access
Semantic Scholar
Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Z. Chai, Wei-Dong Zhang, S. Clima, F. Hatem +9 more
2021IEEE Electron Device Letters10 citations Open access
Semantic Scholar
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit
S. Van Beek, Philippe Rousse, B. O'Sullivan, R. Degraeve +3 more
2018European Solid-State Device Research Conference10 citations
Semantic Scholar
Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling
K. H. Lee, R. Degraeve, M. Toledano-Luque, A. Arreghini +4 more
201510 citations
Semantic Scholar
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability
Bao-Jun Tang, K. Croes, Y. Barbarin, Yun-Qi Wang +7 more
2014Microelectronics and reliability10 citations
Semantic Scholar

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