S. Lépilliet

Most-cited papers

Flexible gigahertz transistors derived from solution-based single-layer graphene.
C. Sire, F. Ardiaca, S. Lépilliet, J. Seo +4 more
2012Nano letters (Print)145 citations
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What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
G. Dambrine, C. Raynaud, D. Lederer, Morin Dehan +5 more
2003IEEE Electron Device Letters130 citations
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Milliwatt-level output power in the sub-terahertz range generated by photomixing in a GaAs photoconductor
E. Peytavit, S. Lépilliet, F. Hindle, C. Coinon +4 more
201170 citations Open access
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230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
P. Chevalier, C. Fellous, L. Rubaldo, F. Pourchon +13 more
2005IEEE Journal of Solid-State Circuits64 citations
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Gigahertz characterization of a single carbon nanotube
L. Nougaret, G. Dambrine, S. Lépilliet, H. Happy +3 more
201055 citations Open access
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65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHZ
F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud +8 more
2006IEEE MTT-S International Microwave Symposium Digest44 citations
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1.8 dB insertion loss 200 GHz CPW band pass filter integrated in HR SOI CMOS Technology
F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud +5 more
20072007 IEEE/MTT-S International Microwave Symposium39 citations
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Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs
G. Dambrine, C. Raynaud, M. Vanmackelberg, F. Danneville +3 more
2003IEEE Transactions on Electron Devices38 citations
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Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz
João Carlos Azevedo Gonçalves, H. Ghanem, S. Bouvot, D. Gloria +4 more
2019IEEE transactions on microwave theory and techniques33 citations
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InAlGaN/GaN HEMTs at Cryogenic Temperatures
E. Dogmus, Riad Kabouche, S. Lépilliet, A. Linge +8 more
201633 citations Open access
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The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter
S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy +4 more
200030 citations
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Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
H. Ghanem, J. A. Gonçalves, P. Chevalier, I. Alaji +6 more
2020IEEE transactions on microwave theory and techniques27 citations
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80 GHz low noise amplifiers in 65nm CMOS SOI
B. Martineau, A. Cathelin, F. Danneville, A. Kaiser +4 more
2007European Solid-State Circuits Conference27 citations
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High-Gain Yagi–Uda Antenna on Cyclic Olefin Copolymer Substrate for 300-GHz Applications
F. Pavanello, G. Ducournau, E. Peytavit, S. Lépilliet +1 more
2014IEEE Antennas and Wireless Propagation Letters24 citations
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Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides
M. Margalef-Rovira, J. Lugo-Alvarez, Alfredo Bautista, L. Vincent +8 more
2020IEEE transactions on microwave theory and techniques23 citations Open access
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A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics
Aurélien Lecavelier Des Etangs-Levallois, Zhen-Kun Chen, M. Lesecq, S. Lépilliet +9 more
201323 citations Open access
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High frequency noise characterisation of graphene FET device
David Mele, S. Frégonèse, S. Lépilliet, E. Pichonat +2 more
20132013 IEEE MTT-S International Microwave Symposium Digest (MTT)22 citations
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Sb-HEMT: Toward 100-mV Cryogenic Electronics
A. Noudéviwa, Y. Roelens, F. Danneville, A. Olivier +9 more
2010IEEE Transactions on Electron Devices21 citations
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Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz
M. Deng, T. Quemerais, S. Bouvot, D. Gloria +4 more
201718 citations
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Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics
A. L. D. Etangs-Levallois, M. Lesecq, F. Danneville, Y. Tagro +6 more
201318 citations Open access
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150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate
Aurélien Lecavelier Des Etangs-Levallois, E. Dubois, Marie Lesecq, F. Danneville +6 more
2011IEEE Electron Device Letters18 citations Open access
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Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths
G. Houzet, K. Blary, S. Lépilliet, D. Lippens +5 more
201116 citations Open access
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A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm
A. Bossuet, T. Quemerais, C. Gaquière, E. Lauga-Larroze +3 more
2016IEEE Microwave and Wireless Components Letters14 citations
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fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate
S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty +3 more
200214 citations
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Very high broadband electromagnetic characterization method of film‐shaped materials using coplanar
J. Hinojosa, K. Lmimouni, S. Lépilliet, G. Dambrine
200214 citations
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Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band
M. Margalef-Rovira, A. Saadi, L. Vincent, S. Lépilliet +7 more
2020IEEE Transactions on Electron Devices13 citations Open access
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RF and broadband noise investigation in High‐k/Metal Gate 28‐nm CMOS bulk transistor
F. Danneville, L. Poulain, Y. Tagro, S. Lépilliet +4 more
201413 citations
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Optimization of a microelectromechanical systems (MEMS) approach for miniaturized microcantilever-based RF microwave probes
J. Marzouk, S. Arscott, Abdelhatif El Fellahi, K. Haddadi +4 more
201611 citations
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Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130–170 GHz Range
M. Deng, L. Poulain, D. Gloria, T. Quemerais +4 more
2014IEEE Microwave and Wireless Components Letters9 citations
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RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology
O. Kane, L. Lucci, P. Scheiblin, S. Lépilliet +1 more
2019Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon8 citations
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22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance
O. Kane, L. Lucci, P. Scheiblin, S. Lépilliet +1 more
2019Radio Frequency Integrated Circuits Symposium8 citations
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A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology
V. Fiorese, Joao Carlos Azevedo Goncalves, S. Bouvot, E. Dubois +5 more
2022European Microwave Integrated Circuits Conference7 citations Open access
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Design of Coupled Slow-Wave CPW Millimeter-Wave Bandpass Filter Beyond 100 GHz in 55-nm BiCMOS Technology
A. Saadi, M. Margalef-Rovira, O. Occello, L. Vincent +3 more
2021IEEE Transactions on Electron Devices7 citations
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A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm
S. Bouvot, J. A. Gonçalves, A. Bossuet, T. Quemerais +4 more
2017International Symposium on Radio-Frequency Integration Technology7 citations
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A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology
A. Bossuet, T. Quemerais, S. Lépilliet, J. Fournier +3 more
2015Bipolar Circuits and Technology Meeting,7 citations
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Miniaturized Microcantilever-based RF Microwave Probes Using MEMS Technologies☆
J. Marzouk, S. Arscott, K. Haddadi, T. Lasri +3 more
20147 citations Open access
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High frequency noise potentialities of reported CMOS 65 nm SOI technology on flexible substrate
Y. Tagro, A. Lecavelier Des Etangs-Levallois, L. Poulain, S. Lépilliet +4 more
20122012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems7 citations
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A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology
V. Fiorese, J. A. Gonçalves, S. Bouvot, S. Lépilliet +4 more
2024IEEE transactions on microwave theory and techniques6 citations Open access
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Design and Characterization of (140–220) GHz Frequency Compensated Power Detector
I. Alaji, S. Lépilliet, D. Gloria, G. Ducournau +1 more
2021IEEE transactions on microwave theory and techniques6 citations
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A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm
S. Bouvot, T. Quemerais, Joao Carlos Azevedo Goncalves, S. Lépilliet +3 more
2017Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems6 citations
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Confinement-modulated junctionless nanowire transistors for logic circuits.
F. Vaurette, R. Leturcq, S. Lépilliet, B. Grandidier +1 more
2014Nanoscale6 citations Open access
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ESD mm-Wave-Circuit Protection: 3-dB Couplers
M. Margalef-Rovira, G. Pelletier, V. Avramovic, S. Lépilliet +7 more
2021IEEE Transactions on Electron Devices5 citations Open access
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Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications
David Mele, Sarah Mehdhbi, D. Fadil, W. Wei +4 more
2018Electronic Materials Letters5 citations
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A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization
J. A. Gonçalves, T. Quemerais, D. Gloria, G. Avenier +4 more
2017International Conference on Microelectronic Test Structures5 citations
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RF noise investigation in High-k/Metal Gate 28-nm CMOS transistors
Y. Tagro, L. Poulain, S. Lépilliet, B. Dormieu +4 more
2012IEEE MTT-S International Microwave Symposium Digest5 citations
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Development of a Millimeter-Long Travelling Wave THz Photomixer
F. Bavedila, C. Tannoury, Q. Lin, S. Lépilliet +10 more
2021Journal of Lightwave Technology4 citations Open access
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Design of zero bias power detectors towards power consumption optimization in 5G devices
I. Alaji, W. Aouimeur, H. Ghanem, E. Okada +4 more
2021Microelectronics Journal4 citations Open access
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75 nm Gate Length PHEMT With fmax = 800 GHz Using Asymmetric Gate Recess: RF and Noise Investigation
M. Samnouni, N. Wichmann, X. Wallart, C. Coinon +2 more
2021IEEE Transactions on Electron Devices4 citations Open access
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Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band
M. Deng, S. Lépilliet, F. Danneville, G. Dambrine +3 more
2013European Microwave Integrated Circuits Conference4 citations
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Ionic Polarization Occurrence in BaSrTiO3 Thin Film by THz-Time Domain Spectroscopy
G. Houzet, K. Blary, S. Lépilliet, D. Lippens +5 more
20124 citations Open access
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