P. Chevalier

Most-cited papers

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
M. Schröter, T. Rosenbaum, P. Chevalier, B. Heinemann +4 more
2017Proceedings of the IEEE155 citations
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0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
G. Avenier, Malick Diop, P. Chevalier, G. Troillard +17 more
2009IEEE Journal of Solid-State Circuits120 citations
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A Study of SiGe HBT Signal Sources in the 220–330-GHz Range
S. Voinigescu, A. Tomkins, E. Dacquay, P. Chevalier +3 more
2013IEEE Journal of Solid-State Circuits117 citations
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165-GHz Transceiver in SiGe Technology
E. Laskin, P. Chevalier, A. Chantre, B. Sautreuil +1 more
2008IEEE Journal of Solid-State Circuits110 citations
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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
P. Chevalier, M. Schröter, C. Bolognesi, V. d'Alessandro +14 more
2017Proceedings of the IEEE86 citations
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Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging
S. Nicolson, P. Chevalier, B. Sautreuil, S. Voinigescu
2008IEEE Journal of Solid-State Circuits82 citations
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An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70–80 GHz Band
I. Sarkas, S. Nicolson, A. Tomkins, E. Laskin +3 more
2009IEEE Journal of Solid-State Circuits77 citations
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A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX
P. Chevalier, F. Pourchon, T. Lacave, G. Avenier +8 more
20092009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting77 citations
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SiGe BiCMOS Current Status and Future Trends in Europe
P. Chevalier, W. Liebl, H. Rücker, A. Gauthier +4 more
2018BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium68 citations
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Design and Scaling of W-Band SiGe BiCMOS VCOs
S. Nicolson, Kenneth H. K. Yau, P. Chevalier, A. Chantre +3 more
2007IEEE Journal of Solid-State Circuits62 citations
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SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
T. Zimmer, J. Böck, F. Buchali, P. Chevalier +22 more
2021IEEE Journal of Microwaves61 citations Open access
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A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output
S. Shopov, A. Balteanu, J. Hasch, P. Chevalier +2 more
2016IEEE Journal of Solid-State Circuits57 citations
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Design of a Dual W- and D-Band PLL
Shahriar Shahramian, A. Hart, A. Tomkins, A. Carusone +3 more
2011IEEE Journal of Solid-State Circuits57 citations
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On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz
Kenneth H. K. Yau, I. Sarkas, A. Tomkins, P. Chevalier +1 more
20102010 IEEE MTT-S International Microwave Symposium44 citations
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Characterization of the Noise Parameters of SiGe HBTs in the 70–170-GHz Range
Kenneth H. K. Yau, P. Chevalier, A. Chantre, S. Voinigescu
2011IEEE transactions on microwave theory and techniques43 citations
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A 0.32 THz FMCW radar system based on low-cost lens-integrated SiGe HBT front-ends
K. Statnikov, E. Ojefors, J. Grzyb, P. Chevalier +1 more
20132013 Proceedings of the ESSCIRC (ESSCIRC)41 citations
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Pushing conventional SiGe HBT technology towards "Dotfive" terahertz
A. Chantre, P. Chevalier, T. Lacave, G. Avenier +5 more
2010European Microwave Integrated Circuits Conference38 citations
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55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters
James Hoffman, S. Shopov, P. Chevalier, A. Cathelin +2 more
2016IEEE Journal of Solid-State Circuits35 citations
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A 160-GHz low-noise downconverter in a SiGe HBT technology
E. Ojefors, F. Pourchon, P. Chevalier, U. Pfeiffer
2010European Microwave Conference30 citations
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500 GHz cutoff frequency SiGe HBTs
N. Zerounian, F. Aniel, B. Barbalat, P. Chevalier +1 more
200728 citations
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Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
H. Ghanem, J. A. Gonçalves, P. Chevalier, I. Alaji +6 more
2020IEEE transactions on microwave theory and techniques27 citations
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A 210–284-GHz I–Q Receiver With On-Chip VCO and Divider Chain
Utku Alakusu, M. S. Dadash, S. Shopov, P. Chevalier +2 more
2020IEEE Microwave and Wireless Components Letters21 citations
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SiGe heterojunction bipolar transistor issues towards high cryogenic performances
E. Ramirez-garcia, N. Zerounian, P. Crozat, M. Enciso-Aguilar +3 more
200921 citations
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Towards a sub-2.5V, 100-Gb/s Serial Transceiver
S. Voinigescu, R. Aroca, T. Dickson, S. Nicolson +5 more
2007IEEE Custom Integrated Circuits Conference20 citations
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Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz
M. Deng, T. Quemerais, S. Bouvot, D. Gloria +4 more
201718 citations
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A D-band PLL covering the 81–82 GHz, 86–92 GHz and 162–164 GHz bands
Shahriar Shahramian, A. Hart, Anthony ChanCarusone, P. Garcia +2 more
20102010 IEEE Radio Frequency Integrated Circuits Symposium16 citations
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PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications
P. Chevalier, F. Gianesello, A. Pallotta, J. A. Gonçalves +37 more
2020International Electron Devices Meeting15 citations
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Design of Low-Power Active Tags for Operation With 77–81-GHz FMCW Radar
M. S. Dadash, J. Hasch, P. Chevalier, A. Cathelin +2 more
2017IEEE transactions on microwave theory and techniques14 citations
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Track and Hold Amplifier Investigation for 100-GHz Bandwidth, 200-GS/s ADC Front Ends
G. Cooke, Naftali Weiss, P. Schvan, P. Chevalier +2 more
2022IEEE Solid-State Circuits Letters13 citations
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TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS
Van-tuan Vu, D. Céli, T. Zimmer, S. Frégonèse +1 more
201613 citations Open access
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From measurement to intrinsic device characteristics: Test structures and parasitic determination
F. Pourchon, C. Raya, N. Derrier, P. Chevalier +3 more
20082008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting13 citations
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Will BiCMOS stay competitive for mmW applications ?
P. Garcia, A. Chantre, S. Pruvost, P. Chevalier +4 more
2008IEEE Custom Integrated Circuits Conference12 citations
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Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications
G. Amendola, L. Boccia, F. Centurelli, P. Chevalier +6 more
2021IEEE Transactions on Circuits and Systems - II - Express Briefs11 citations Open access
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DC-62 GHz 4-phase 25% duty cycle quadrature clock generator
Naftali Weiss, S. Shopov, P. Schvan, P. Chevalier +2 more
20172017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)11 citations
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Innovative SiGe HBT Topologies With Improved Electrothermal Behavior
R. D'Esposito, S. Frégonèse, A. Chakravorty, P. Chevalier +2 more
2016IEEE Transactions on Electron Devices11 citations
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A 160-GHz low-noise downconversion receiver front-end in a SiGe HBT technology
Erik Öjefors, F. Pourchon, P. Chevalier, U. Pfeiffer
2011International journal of microwave and wireless technologies11 citations Open access
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Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors
N. Zerounian, F. Aniel, Benoît Barbalat, P. Chevalier +1 more
200911 citations
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SiGe HBT featuring fT > 600GHz at Cryogenic Temperature
N. Zerounian, E. Ramirez-garcia, F. Aniel, P. Chevalier +2 more
200811 citations Open access
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Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K
S. Bonen, G. Cooke, T. Jager, A. Bharadwaj +5 more
2022IEEE Microwave and Wireless Components Letters10 citations
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Design of Silicon On-Wafer Sub-THz Calibration Kit
M. Deng, S. Frégonèse, D. Céli, P. Chevalier +2 more
2017Mobile und Ubiquitäre Informationssysteme10 citations
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Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors
M. Seif, F. Pascal, B. Sagnes, A. Hoffmann +3 more
2014European Solid-State Device Research Conference10 citations
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450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
A. Gauthier, J. Borrel, P. Chevalier, G. Avenier +7 more
2018BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium9 citations
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Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130–170 GHz Range
M. Deng, L. Poulain, D. Gloria, T. Quemerais +4 more
2014IEEE Microwave and Wireless Components Letters9 citations
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Investigation of SiGe HBT potentialities under cryogenic temperature
N. Waldhoff, F. Danneville, G. Dambrine, B. Geynet +1 more
20092009 Proceedings of the European Solid State Device Research Conference9 citations
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Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology
Mario Weiss, C. Majek, A. Sahoo, C. Maneux +4 more
2013IEEE Electron Device Letters8 citations
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The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors
B. Barbalat, T. Schwartzmann, P. Chevalier, B. Vandelle +6 more
20068 citations Open access
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200-GS/s ADC Front-End Employing 25% Duty Cycle Quadrature Clock Generator
Naftali Weiss, G. Cooke, P. Schvan, P. Chevalier +2 more
2021European Solid-State Circuits Conference7 citations
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A W-band active millimeter-wave tag IC with wake-up function
M. S. Dadash, J. Hasch, P. Chevalier, A. Cathelin +1 more
2017Intelligent Memory Systems7 citations
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Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
M. Seif, F. Pascal, B. Sagnes, A. Hoffmann +3 more
2014Microelectronics and reliability7 citations
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-Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology
E. Dacquay, E. Laskin, P. Chevalier
20127 citations
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