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I. Mizushima · SciRah

Researcher profile · Semantic Scholar

I. Mizushima

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I. Mizushima — researcher profile on SciRah

h-index: 14
Works: 131
Citations: 857

Most-cited papers

Empty-space-in-silicon technique for fabricating a silicon-on-nothing structure
I. Mizushima, T. Sato, S. Taniguchi, Y. Tsunashima
2000128 citations
Semantic Scholar
Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
Tsutomu Satō, I. Mizushima, S. Taniguchi, K. Takenaka +5 more
200482 citations
Semantic Scholar
Micro-structure Transformation of Silicon: A Newly Developed Transformation Technology for Patterning Silicon Surfaces using the Surface Migration of Silicon Atoms by Hydrogen Annealing
Tsutomu Satō, K. Mitsutake, I. Mizushima, Y. Tsunashima
200073 citations Open access
Semantic Scholar
Short-channel performance and mobility analysis of <110>- and <100>-oriented tri-gate nanowire MOSFETs with raised source/drain extensions
M. Saitoh, Y. Nakabayashi, H. Itokawa, M. Murano +3 more
2010Symposium on VLSI Technology33 citations
Semantic Scholar
A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migration
Tsutomu Satō, N. Aoki, I. Mizushima, Yoshitaka Tsunashima
1999International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318)25 citations Open access
Semantic Scholar
Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth
R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh +2 more
201224 citations Open access
Semantic Scholar
Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels
T. Irisawa, K. Okano, T. Horiuchi, H. Itokawa +5 more
2009IEEE Transactions on Electron Devices22 citations
Semantic Scholar
Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern
K. Toko, Yasuharu Ohta, Takashi Sakane, T. Sadoh +2 more
201120 citations Open access
Semantic Scholar
Precipitation of Boron in Highly Boron-Doped Silicon
I. Mizushima, Y. Mitani, M. Koike, M. Yoshiki +2 more
199817 citations
Semantic Scholar
SON (Silicon on Nothing) MOSFET using ESS (Empty Space in Silicon) technique for SoC applications
Tsutomu Satō, H. Nii, Masayuki Hatano, K. Takenaka +9 more
2001International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)16 citations
Semantic Scholar
Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators
I. Mizushima, K. Toko, Yasuharu Ohta, Takashi Sakane +2 more
201114 citations
Semantic Scholar
Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond
A. Hokazono, H. Itokawa, N. Kusunoki, I. Mizushima +3 more
2008Symposium on VLSI Technology14 citations
Semantic Scholar
SOI/Bulk Hybrid Wafer Fabrication Process Using Selective Epitaxial Growth (SEG) Technique for High-End SoC Applications
H. Nagano, Tsutomu Satō, K. Miyano, Takashi Yamada +1 more
200314 citations Open access
Semantic Scholar
Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
K. Miyano, I. Mizushima, Kazuya Ohuchi, A. Hokazono +1 more
199914 citations Open access
Semantic Scholar
Vibrational properties of two boron atoms in silicon
J. Yamauchi, N. Aoki, I. Mizushima
200112 citations
Semantic Scholar
Source/drain engineering for MOSFETs with embedded-Si:C technology
H. Itokawa, Nobuaki Yasutake, N. Kusunoki, S. Okamoto +2 more
200811 citations
Semantic Scholar
Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor
H. Itokawa, K. Miyano, Y. Oshima, I. Mizushima +1 more
201010 citations
Semantic Scholar
Contribution of Carbon to Activation and Diffusion of Boron in Silicon
H. Itokawa, Yuji Agatsuma, N. Aoki, N. Uchitomi +1 more
200910 citations Open access
Semantic Scholar
25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)
A. Hokazono, H. Itokawa, N. Kusunoki, I. Mizushima +3 more
2011IEEE Transactions on Electron Devices9 citations
Semantic Scholar
Record-high performance 32 nm node pMOSFET with advanced Two-step recessed SiGe-S/D and stress liner technology
Nobutoshi Yasutake, Ai Azuma, T. Ishida, N. Kusunoki +9 more
20072007 IEEE Symposium on VLSI Technology9 citations
Semantic Scholar
Stress-induced voiding under vias connected to "narrow" copper lines
T. Kouno, I. Suzuki, S. Otsuka, T. Hosoda +10 more
2005IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.8 citations
Semantic Scholar
Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia
Masayuki Tanaka, S. Saida, I. Mizushima, F. Inoue +5 more
20028 citations Open access
Semantic Scholar
Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence
Yasuhiro Isobe, H. Hung, Kohei Oasa, T. Ono +8 more
20177 citations
Semantic Scholar
Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling
A. Hokazono, H. Itokawa, I. Mizushima, S. Kawanaka +2 more
2009International Electron Devices Meeting7 citations
Semantic Scholar
Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
S. Sato, I. Mizushima, K. Miyano, Tsutomu Satō +4 more
20057 citations
Semantic Scholar
Robust selective-epitaxial-growth process for hybrid SOI wafer
H. Nagano, K. Miyano, T. Yamada, I. Mizushima
20037 citations
Semantic Scholar
Ultra high dose boron ion implantation: super-saturation of boron and its application
I. Mizushima, A. Murakoshi, K. Suguro, N. Aoki +1 more
19987 citations
Semantic Scholar
Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
I. Mizushima, M. Koike, Tsutomu Satō, K. Miyano +1 more
19987 citations
Semantic Scholar
Structure and reduction of large bumps formed on 4H-SiC epitaxial film originated from dislocations in substrate
Y. Daigo, A. Ishiguro, Yoshikazu Moriyama, I. Mizushima
2021Journal of Crystal Growth6 citations
Semantic Scholar
Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition
Y. Isobe, T. Sakai, N. Sugiyama, I. Mizushima +12 more
2019Journal of Vacuum Science & Technology B6 citations
Semantic Scholar
Insight into the S/D engineering by high-resolution imaging and precise probing of 2D-carrier profiles with scanning spreading resistance microscopy
Li Zhang, M. Saitoh, A. Kinoshita, Nobuaki Yasutake +7 more
2009International Electron Devices Meeting6 citations
Semantic Scholar
High-Performance 45nm node CMOS Transistors Featuring Flash Lamp Annealing (FLA)
T. Sanuki, T. Iwamoto, K. Ota, T. Komoda +34 more
20072007 IEEE International Electron Devices Meeting6 citations
Semantic Scholar
A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology
H. Okamoto, Nobuaki Yasutake, N. Kusunoki, K. Adachi +8 more
2009European Solid-State Device Research Conference5 citations
Semantic Scholar
Oxide-Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
I. Mizushima, Y. Mitani, K. Miyano, Shigeru Kambayashi
19995 citations Open access
Semantic Scholar
Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
A. Uedono, Y. Kimura, T. Hoshii, K. Kakushima +6 more
2023Journal of Applied Physics4 citations
Semantic Scholar
A Study on aggressive proximity of embedded SiGe with comprehensive SDE engineering for 32 nm-node high-performance pMOSFET technology
H. Okamoto, Nobuaki Yasutake, N. Kusunoki, K. Adachi +8 more
2008European Solid-State Device Research Conference4 citations
Semantic Scholar
Advanced surface cleanness evaluation technique using epitaxial silicon germanium (SiGe) process beyond 32nm node
Kaori Umezawa, Minako Inukai, S. Mori, Tsutomu Satō +3 more
2007International Symposium on Semiconductor Manufacturing4 citations
Semantic Scholar
First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
K. Chokawa, Y. Daigo, I. Mizushima, T. Yoda +1 more
2021Japanese Journal of Applied Physics3 citations Open access
Semantic Scholar
Influence of Carbon in In-situ Carbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics
Hiroto Oomae, H. Itokawa, I. Mizushima, Shin-ichi Nakamura +1 more
20093 citations Open access
Semantic Scholar
Comprehensive study of S/D engineering for 32 nm node CMOS in direct silicon bonded (DSB) technology
Nobutoshi Yasutake, Akiko Nomachi, H. Itokawa, T. Morooka +6 more
2008European Solid-State Device Research Conference3 citations
Semantic Scholar
Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
Hisataka Hayashi, K. Ohuchi, K. Miyano, A. Hokazono +2 more
20003 citations Open access
Semantic Scholar
Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat
Masaya Hayashi, Takumi Mamyouda, Hitoshi Habuka, A. Ishiguro +5 more
20202 citations Open access
Semantic Scholar
High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition
Keisuke Kurashima, Masaya Hayashi, Hitoshi Habuka, Hideki Ito +3 more
2019ECS Journal of Solid State Science and Technology2 citations Open access
Semantic Scholar
Influence of in-situ Boron Doping on the Surface Roughening of SiGe:B Films
R. Tsuchida, S. Mori, Tsutomu Satō, N. Uchitomi +1 more
20082 citations Open access
Semantic Scholar
Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations
K. Kasahara, N. Uchitomi, Takashi Shimizu, K. Saki +1 more
20082 citations
Semantic Scholar
Sophisticated methodology of dummy pattern generation for suppressing dislocation induced contact misalignment on flash lamp annealed eSiGe wafer
Osamu Fujii, T. Sanuki, Y. Oshiki, T. Itani +8 more
2006Symposium on VLSI Technology2 citations
Semantic Scholar
Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor
Yuika Takizawa, Masaya Hayashi, Hitoshi Habuka, A. Ishiguro +6 more
2022ECS Journal of Solid State Science and Technology1 citations Open access
Semantic Scholar
Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method
Y. Daigo, Yuya Takada, Keisuke Kurashima, Toru Watanabe +4 more
2022Japanese Journal of Applied Physics1 citations Open access
Semantic Scholar
Impact of carbon on diffusion and activation of arsenic in silicon
H. Itokawa, I. Mizushima
2014International Workshop on Junction Technology1 citations
Semantic Scholar
Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral-Crystallization
M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima +1 more
20131 citations
Semantic Scholar

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Tsutomu Satō — researcher profile on SciRah
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Y. Tsunashima — researcher profile on SciRah

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N. Uchitomi — researcher profile on SciRah

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Y. Daigo — researcher profile on SciRah

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M. Miyao — researcher profile on SciRah