I. Esqueda

Most-cited papers

1. Room‐Temperature Synthesis of 2D Janus Crystals and their Heterostructures

   Dipesh B. Trivedi, G. Turgut, Ying Qin, Mohammed Sayyad +18 more

   2020Advances in Materials298 citations

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2. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

   Xiao-Dong Yan, I. Esqueda, Jiahui Ma, J. Tice +1 more

   2018142 citations

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3. Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices

   H. Barnaby, M. Mclain, I. Esqueda, Xiao-Jie Chen

   2008IEEE Transactions on Circuits and Systems Part 1: Regular Papers69 citations

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4. Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

   N. Patoary, Jing Xie, Guantong Zhou, F. Al Mamun +3 more

   2023Scientific Reports64 citations Open access

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5. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

   H. Barnaby, M. Mclain, I. Esqueda

   200757 citations

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6. Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

   F. E. Mamouni, S. K. Dixit, peixiong zhao, P. Adell +5 more

   2008IEEE Transactions on Nuclear Science51 citations

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7. Modeling ionizing radiation effects in solid state materials and CMOS devices

   H. Barnaby, M. Mclain, I. Esqueda, Xiao Jie Chen

   2008IEEE Custom Integrated Circuits Conference48 citations

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8. Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

   I. Esqueda, H. Barnaby, M. Mclain, P. Adell +4 more

   2009IEEE Transactions on Nuclear Science36 citations

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9. Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from 2D Janus Layers

   Mohammed Sayyad, Ying Qin, J. Kopaczek, Adway Gupta +11 more

   2023Advanced Functional Materials33 citations Open access

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10. Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity

    I. Esqueda, H. Barnaby, P. Adell

    2011European Conference on Radiation and Its Effects on Components and Systems32 citations

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11. Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors

    M. Mclain, H. Barnaby, I. Esqueda, J. Oder +1 more

    2009IEEE International Reliability Physics Symposium30 citations

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12. Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors

    I. Esqueda, H. Barnaby, K. Holbert, F. El-Mamouni +1 more

    2009IEEE Transactions on Nuclear Science28 citations

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13. A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits

    I. Esqueda, H. Barnaby

    201427 citations

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14. Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps

    I. Esqueda, H. Barnaby

    2012IEEE Transactions on Nuclear Science27 citations

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15. Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors

    Jing Xie, N. Patoary, Guantong Zhou, Mohammed Sayyad +2 more

    2022Nanotechnology22 citations

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16. Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-Oxide-Semiconductor Technologies

    I. Esqueda

    201121 citations

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17. Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

    I. Esqueda, C. D. Cress, Yuchi Che, Yu Cao +1 more

    201420 citations

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18. Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures

    T. Wallace, M. Spear, A. Privat, J. Neuendank +14 more

    2023IEEE Transactions on Nuclear Science19 citations

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19. The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors

    I. Esqueda, C. D. Cress, Yu Cao, Yuchi Che +2 more

    201519 citations

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20. Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

    I. Esqueda, He Tian, Xiao-Dong Yan, Han Wang

    2017IEEE Transactions on Electron Devices17 citations Open access

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21. Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

    I. Esqueda, H. Barnaby, K. Holbert, F. E. Mamouni +1 more

    2009European Conference on Radiation and Its Effects on Components and Systems17 citations

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22. Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits

    P. Adell, B. Rax, I. Esqueda, H. Barnaby

    2015IEEE Transactions on Nuclear Science16 citations

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23. Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses

    I. Esqueda, Huan Zhao, Han Wang

    2018Journal of Applied Physics13 citations

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24. Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

    I. Esqueda, C. D. Cress, T. Anderson, Jonathan R. Ahlbin +3 more

    201313 citations Open access

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25. Gamma Ray Induced Structural Effects in Bare and Ag Doped Ge–S Thin Films for Sensor Application

    M. Mitkova, Ping-Han Chen, M. Ailavajhala, D. Butt +3 more

    201311 citations

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26. Non-Linear Coupling Effects in Fully Depleted SOI Transistors

    M. Spear, H. Barnaby, T. Wallace, Jose Solano +7 more

    2023IEEE Transactions on Nuclear Science8 citations

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27. Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

    J. Neuendank, M. Spear, T. Wallace, D. Wilson +19 more

    2022Radiation Effects Data Workshop8 citations

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28. Nanowire Field-Effect Transistors

    Debarghya Sarkar, I. Esqueda, R. Kapadia

    2018Advanced Nanoelectronics6 citations

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29. The impact of stress-induced defects on MOS electrostatics and short-channel effects

    I. Esqueda

    20156 citations

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30. Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

    Ping-Han Chen, M. Ailavajhala, M. Mitkova, D. Tenne +2 more

    20112011 IEEE Workshop on Microelectronics and Electron Devices5 citations

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31. Electron‐Beam Excited Conductive Atomic Force Microscopy for Back Contact Free, Wafer‐Scale and In‐Line Compatible Electrical Characterization of 2D Materials

    M. Laskar, Sakib Ahmed, P. Tummala, A. Molle +11 more

    2025Advancement of science4 citations Open access

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32. Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations

    Ian P. Livingston, I. Esqueda, H. Barnaby

    2019Solid-State Electronics4 citations Open access

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33. Metallic 2D Janus SNbSe layers driven by a structural phase change.

    Cheng‐Lun Wu, M. Sayyad, R. Sailus, D. Dey +8 more

    2025Nanoscale3 citations

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34. An Implicit Analytical Surface Potential Based Model for Long Channel Symmetric Double-Gate MOSFETs Accounting for Oxide and Interface Trapped Charges

    Ian P. Livingston, I. Esqueda, H. Barnaby

    2021Solid-State Electronics3 citations Open access

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35. Confinement Effects on Radiation Response of SOI FinFETs at the Scaling Limit

    I. Esqueda

    2017IEEE Electron Device Letters3 citations

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36. Physics-informed computer vision assisted defects classifier in transition metal dichalcogenides using electrical atomic force microscopy

    Filippo Ozino Caligaris, Md. Jayed Hossain, M. Laskar, Y. Botros +5 more

    2025APL Materials2 citations Open access

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37. Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology

    Jose Solano, M. Spear, T. Wallace, D. Wilson +6 more

    2022Radiation Effects Data Workshop2 citations

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38. Radiation-induced Enhancement of Scattering Effects in FD-SOI MOSFETs

    M. Spear, F. Al Mamun, Jose Solano, Hugh Barnaby +1 more

    2022European Conference on Radiation and Its Effects on Components and Systems2 citations

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39. Bias temperature instability model using dynamic defect potential for predicting CMOS aging

    Run-Chen Fang, Ian P. Livingston, I. Esqueda, M. Kozicki +1 more

    2018Journal of Applied Physics2 citations

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40. Cryptosporidium baileyi in the bursa of Fabricius of broilers, in the central-coastal region of Venezuela

    Q. Surumay, J. S. Bracho, I. Esqueda

    19962 citations

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41. Gamma ray induced structural effects in bare and Ag doped Ge – S thin fi lms for sensor application

    M. Mitkova, P. Chen, M. Ailavajhala, D. Butt +3 more

    20131 citations

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42. Modeling the non-uniform distribution of interface traps

    I. Esqueda, H. Barnaby

    2011European Conference on Radiation and Its Effects on Components and Systems1 citations

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43. TID Effects on FD-SOI Nanoscale Transistors at Cryogenic Temperatures

    F. Al Mamun, M. Spear, Jose Solano, J. Neuendank +4 more

    2026IEEE Transactions on Nuclear Science0 citations

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44. Who needs an electrical back-contact after all?

    M. Laskar, Md. Jayed Hossain, Srijan Chakrabarti, Sanchari Sen +10 more

    2026Nanoscale0 citations

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45. Effects of Carrier Degeneracy on Electron Transport in Nanoscale FD-SOI Transistors at Cryogenic Temperatures

    F. Al Mamun, Ke-Xin Li, D. Vasileska, I. Esqueda

    2026IEEE Transactions on Electron Devices0 citations

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46. Reactive Pulsed Laser Deposition of Epitaxial Bi 2 O 2 Se for Field‐Effect Transistor Application (Adv. Funct. Mater. 55/2026)

    Cheng‐Lun Wu, Jing Xie, Md. Jayed Hossain, Ângela Agra +8 more

    2026Advanced Functional Materials0 citations

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47. Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Digital Structures .

    T. Wallace, M. Spear, A. Privat, J. Neuendank +12 more

    2022Proposed for presentation at the 2022 IEEE NSREC in ,0 citations Open access

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48. Special NSREC 2018 Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

    D. Fleetwood, Dennis B. Brown, H. Quinn, I. Esqueda +4 more

    2019IEEE Transactions on Nuclear Science0 citations Open access

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49. Comments by the Editors

    D. Fleetwood, Dennis B. Brown, H. Quinn, I. Esqueda +4 more

    2019IEEE Transactions on Nuclear Science0 citations Open access

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50. Special NSREC 2017 Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

    D. Fleetwood, Dennis B. Brown, Sylvain Girard, S. Gerardin +3 more

    20180 citations

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