F. La Via

Most-cited papers

1. Emerging SiC Applications beyond Power Electronic Devices

   F. La Via, D. Alquier, F. Giannazzo, T. Kimoto +5 more

   2023Micromachines105 citations Open access

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2. New Approaches and Understandings in the Growth of Cubic Silicon Carbide

   F. La Via, M. Zimbone, C. Bongiorno, A. La Magna +20 more

   2021Materials58 citations Open access

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3. Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries

   M. Zimbone, A. Sarikov, C. Bongiorno, A. Marzegalli +4 more

   2021Acta Materialia44 citations Open access

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4. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

   Fan Li, F. Roccaforte, G. Greco, P. Fiorenza +7 more

   2021Materials42 citations Open access

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5. Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

   C. Altana, L. Calcagno, C. Ciampi, F. La Via +7 more

   2023Italian National Conference on Sensors37 citations Open access

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6. Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

   G. Fisicaro, C. Bongiorno, I. Deretzis, F. Giannazzo +5 more

   2020Applied Physics Reviews36 citations Open access

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7. The NUMEN Heavy Ion Multidetector for a Complementary Approach to the Neutrinoless Double Beta Decay

   P. Finocchiaro, L. Acosta, C. Agodi, C. Altana +43 more

   202035 citations Open access

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8. Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

   M. Beygi, John T Bentley, C. Frewin, Cary A. Kuliasha +4 more

   2019Micromachines34 citations Open access

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9. Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

   S. Sapienza, M. Ferri, L. Belsito, D. Marini +3 more

   2021Micromachines25 citations Open access

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10. Silicon Carbide devices for radiation detection: A review of the main performances

    S. Tudisco, C. Altana, S. Amaducci, C. Ciampi +7 more

    2024Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment23 citations

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11. Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

    P. Badalà, S. Rascunà, B. Cafra, Anna Bassi +11 more

    202023 citations

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12. Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

    Alessandro Meli, A. Muoio, A. Trotta, L. Meda +2 more

    2021Materials22 citations Open access

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13. Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

    V. Scuderi, C. Calabretta, R. Anzalone, M. Mauceri +1 more

    2020Materials19 citations Open access

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14. Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

    M. Spera, G. Greco, R. Nigro, C. Bongiorno +4 more

    2019Materials Science in Semiconductor Processing17 citations Open access

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15. Towards Vertical Schottky Diodes on Bulk Cubic Silicon Carbide (3c-Sic)

    F. Roccaforte, G. Greco, P. Fiorenza, S. Di Franco +6 more

    2022Social Science Research Network16 citations Open access

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16. Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

    C. Calabretta, V. Scuderi, C. Bongiorno, A. Cannizzaro +6 more

    2022Crystal Growth & Design15 citations Open access

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17. The NUMEN Technical Design Report

    F. Cappuzzello, C. Agodi, L. Calabretta, D. Calvo +49 more

    2021International Journal of Modern Physics A15 citations

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18. Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

    M. Zimbone, E. G. Barbagiovanni, C. Bongiorno, C. Calabretta +4 more

    202015 citations

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19. Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

    M. Vivona, P. Fiorenza, V. Scuderi, F. La Via +2 more

    2023Applied Physics Letters14 citations Open access

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20. Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

    C. Calabretta, V. Scuderi, R. Anzalone, M. Mauceri +4 more

    2021Materials14 citations Open access

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21. Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications

    Alessandro Meli, A. Muoio, R. Reitano, E. Sangregorio +5 more

    2022Micromachines13 citations Open access

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22. Operation of a 250μm-thick SiC detector with DT neutrons at high temperatures

    M. Kushoro, M. Angelone, D. Bozzi, S. Cancelli +9 more

    2024Fusion engineering and design12 citations Open access

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23. Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface

    M. Beygi, W. Dominguez‐Viqueira, Chenyin Feng, G. Mumcu +3 more

    2021Micromachines12 citations Open access

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24. Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors

    M. Kushoro, M. Rebai, M. Tardocchi, C. Altana +11 more

    2021Materials12 citations Open access

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25. Silicon Carbide characterization at the n_TOF spallation source with quasi-monoenergetic fast neutrons

    M. Kushoro, M. Rebai, M. Dicorato, D. Rigamonti +14 more

    202012 citations

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26. Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

    E. Schilirò, P. Fiorenza, Raffaella Lo Nigro, B. Galizia +6 more

    2023Materials11 citations Open access

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27. Review of Sublimation Growth of SiC Bulk Crystals

    P. Wellmann, M. Arzig, Jonas Ihle, M. Kollmuss +10 more

    2022Materials Science Forum11 citations Open access

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28. Partially depleted operation of 250 μm-thick silicon carbide neutron detectors

    M. H. Kushoro, M. Angelone, D. Bozzi, G. Gorini +5 more

    2023Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment10 citations Open access

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29. Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

    M. Agati, S. Boninelli, Cristiano Calabretta, F. Mancarella +6 more

    202110 citations Open access

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30. Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

    M. Masullo, R. Bergamaschini, M. Albani, T. Kreiliger +6 more

    2019Materials10 citations Open access

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31. On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

    P. Fiorenza, E. Schilirò, F. Giannazzo, C. Bongiorno +3 more

    20209 citations Open access

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32. Silicon Carbide devices for radiation detection and measurements

    F. La Via, S. Tudisco, C. Altana, M. Boscardin +13 more

    2020Journal of Physics, Conference Series9 citations Open access

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33. Characterization of newly developed large area SiC sensors for the NUMEN experiment

    D. Carbone, A. Spatafora, D. Calvo, F. Guerra +6 more

    2024Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment8 citations Open access

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34. Advanced approach of bulk (111) 3C-SiC epitaxial growth

    C. Calabretta, V. Scuderi, C. Bongiorno, R. Anzalone +6 more

    2023Microelectronic Engineering8 citations

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35. Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

    A. Sarikov, A. Marzegalli, Luca Barbisan, M. Zimbone +5 more

    20218 citations

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36. Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector

    A. Mancuso, E. Sangregorio, Annamaria Muoio, S. De Luca +7 more

    2025Materials7 citations

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37. Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

    C. Calabretta, A. Pecora, M. Agati, A. Muoio +5 more

    2024Materials Science in Semiconductor Processing7 citations

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38. Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

    P. Fiorenza, L. Maiolo, G. Fortunato, M. Zielinski +3 more

    2022Journal of Applied Physics7 citations

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39. Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates

    Michael Schöler, F. La Via, M. Mauceri, P. Wellmann

    20217 citations Open access

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40. SiC free-standing membrane for X-ray intensity monitoring in synchrotron radiation beamlines

    G. Trovato, M. De Napoli, C. Gollwitzer, S. Finizio +9 more

    2025Journal of Synchrotron Radiation6 citations Open access

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41. Performance of a thick 250 μm silicon carbide detector: stability and energy resolution

    M. H. Kushoro, M. Rebai, F. La Via, A. Meli +6 more

    2023Journal of Instrumentation6 citations Open access

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42. Multiscale Simulations for Defect-Controlled Processing of Group IV Materials

    G. Calogero, I. Deretzis, G. Fisicaro, M. Kollmuss +5 more

    2022Crystals6 citations Open access

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43. Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si

    F. Torregrosa, M. Canino, F. Li, F. Tamarri +5 more

    2022MRS Advances6 citations

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44. A study on free-standing 3C-SiC bipolar power diodes

    Fan Li, A. Renz, A. Pérez‐Tomás, V. Shah +4 more

    20216 citations Open access

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45. Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

    P. Wellmann, Philipp Schuh, M. Kollmuss, Michael Schöler +4 more

    20206 citations Open access

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46. Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams

    Angela Garofalo, Annamaria Muoio, S. Sapienza, Matteo Ferri +3 more

    2025Micromachines5 citations Open access

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47. 250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances

    G. Trovato, Alessandro Meli, Annamaria Muoio, R. Reitano +8 more

    2024Key Engineering Materials5 citations Open access

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48. Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

    V. Scuderi, M. Zielinski, F. La Via

    2023Materials5 citations Open access

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49. Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

    M. Kollmuss, Michael Schöler, R. Anzalone, M. Mauceri +2 more

    2022Materials Science Forum5 citations Open access

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50. Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing

    C. Calabretta, A. Pecora, M. Agati, S. Privitera +3 more

    2022Materials Science Forum5 citations Open access

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