W. Ho

Most-cited papers

Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz
N.-L. Wang, Neng H. Sheng, M. Chang, W. Ho +4 more
199082 citations
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AlGaAs/GaAs HBT linearity characteristics
Nan L. Wang, W. Ho, J. Higgins
199457 citations
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Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors
Ce-Jun Wei, Y. Lan, James C. M. Hwang, W. Ho +1 more
199544 citations
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A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier
Neng H. Sheng, W. Ho, N.-L. Wang, R. Pierson +2 more
1991IEEE Microwave and Guided Wave Letters42 citations
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Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs
Ce-Jun Wei, J. Hwang, W. Ho, J. Higgins
199638 citations
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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications
Pin-Fan Chen, U.-M.T. Hsin, R. Welty, P. Asbeck +5 more
199933 citations
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GaInP/GaAs HBTs for high-speed integrated circuit applications
W. Ho, M. Chang, A. Sailer, Peter J. Zampardi +5 more
1993IEEE Electron Device Letters29 citations
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High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation
M. Ho, R. A. Johnson, W. Ho, M. Chang +1 more
1995IEEE Electron Device Letters25 citations
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Monolithic 40-GHz 670-mW HBT grid amplifier
Cheh-Ming Liu, E. A. Sovero, W. Ho, J. Higgins +2 more
1996IEEE MTT-S International Microwave Symposium Digest24 citations
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Negative photoconductivity in high electron mobility transistors
C. S. Chang, H. Fetterman, D. Ni, E. Sovero +2 more
198721 citations
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GaInP/GaAs HBT's for high-speed integrated circuit applications
W. Ho, M. Chang, A. Sailer, P. Zampardi +4 more
199320 citations
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18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT
N.-L. Wang, Neng H. Sheng, W. Ho, M. Chang +3 more
1990IEEE International Digest on Microwave Symposium20 citations
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A GaAs BiFET LSI technology
W. Ho, M. Chang, S. Beccue, Peter J. Zampardi +4 more
1994Proceedings of 1994 IEEE GaAs IC Symposium18 citations
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4 W, 7-12 GHz, compact CB HBT MMIC power amplifier
N.-L. Wang, W. Ho, J. Higgins
1992GaAs IC Symposium Technical Digest 199218 citations
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A high-efficiency HBT MMIC power amplifier
R. Ramachandran, M. Nijjar, A. Podell, E. Stoneham +7 more
199012th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC)17 citations
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Waveform characterization of microwave power heterojunction bipolar transistors
C.-J. Wei, Y. Lan, James C. M. Hwang, W. Ho +1 more
1995Proceedings of 1995 IEEE MTT-S International Microwave Symposium16 citations
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44-GHz monolithic plane-wave amplifiers
J. Higgins, E. Sovero, W. Ho
199516 citations
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0.7 W X-Ku-band high-gain, high-efficiency common base power HBT
N.-L. Wang, W. Ho, J. Higgins
199116 citations
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25 GHz HBT frequency dividers
R. Nubling, Neng H. Sheng, K.-C. Wang, M. Chang +4 more
1989Symposium14 citations
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A Q-band monolithic linear amplifier using AlGaAs/GaAs HBT's
Youngwoo Kwon, W. Ho, J. Higgins
1996IEEE Microwave and Guided Wave Letters11 citations
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Single-chip RF front-end MMIC using InGaAs E/DpHEMT for 3.5 GHz WiMAX applications
Yu-Cheng Hsu, Ping-Hsun Wu, Cheng-Chung Chen, Jian-Yu Li +3 more
2007European Microwave Conference10 citations
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Self-Aligned, Emitter-Edge-Passivated AIGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz
W. Ho, N.-L. Wang, M. Chang, A. Sailer +1 more
199250th Annual Device Research Conference9 citations
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A multifunctional HBT technology
W. Ho, M. Chang, Neng H. Sheng, N.-L. Wang +5 more
199012th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC)9 citations
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High power efficiency X-band GaAlAs/GaAs HBT
N.-L. Wang, Neng H. Sheng, M. Chang, W. Ho +4 more
1989Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,9 citations
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InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers
T. Wee, T.-C. Tsai, J.-H. D. Huang, W. Lee +3 more
20058 citations
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7.5-14-GHz CE HBT MMIC linear power amplifier
N.-L. Wang, W. Ho, A. Sailer, J. Higgins
1993IEEE Microwave and Guided Wave Letters8 citations
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Power HBT for 44 GHz operation
D. Deakin, W. Ho, E. Sovero, J. Higgins
199315th Annual GaAs IC Symposium8 citations
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Single-chip Dual-Mode Power Amplifier MMIC using GaAs E-pHEMT for WiMAX/WLAN Applications
Yu-Cheng Hsu, Shih-Ming Wang, Cheng-Chung Chen, W. Ho +1 more
20072007 IEEE/MTT-S International Microwave Symposium7 citations
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Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs
D. Pehlke, A. Sailer, W. Ho, J. Higgins +1 more
1996IEEE MTT-S International Microwave Symposium Digest7 citations
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Producibility and performance of the microwave power HBT
W. Ho, N.-L. Wang, M. Chang, J. Higgins
1992GaAs IC Symposium Technical Digest 19927 citations
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High linearity power operation of AlGaAs/GaAs HBT at 10 GHz
N.-L. Wang, W. Ho, J. Higgins
19927 citations
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A predictive model describing the upconversion of 1/f noise into AM sideband noise in HBTs
D. Pehlke, A. Sailer, W. Ho, J. Higgins +3 more
19951995 53rd Annual Device Research Conference Digest6 citations
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Millimeter-wave AlGaAs-GaAs HBT power operation
N.-L. Wang, W. Ho, J. Higgins
1992IEEE Microwave and Guided Wave Letters6 citations
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X-band HBT VCO with high-efficiency CB buffer amplifier
Nan L. Wang, W. Ho
1991[1991] GaAs IC Symposium Technical Digest6 citations
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New de-embedding method for millimetre-wave bipolar transistor S-parameter measurement
N.-L. Wang, W. Ho, J. Higgins
19916 citations
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Monolithic integration of HEMTs and Schottky diodes for millimeter wave circuits
W. Ho, E. A. Sovero, D. Deakin, R. D. Stein +4 more
198810th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.6 citations
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Manufacturing of GaAs MMICs for Wireless Communications Applications
W. Ho, J. Liu, Heng-Chang Chou, Chan-Shin Wu +4 more
20065 citations
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A millimeter-wave monolithic grid amplifier
Cheh-Ming Liu, E. Sovero, W. Ho, J. Higgins +1 more
19955 citations
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High gain AllnAs/GaAsSb/AllnAs NpN HBTs on InP
G. Sullivan, C. Farley, W. Ho, R. Pierson +3 more
19925 citations
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A monolithic 35 GHz HBT quasi-optical grid oscillator
E. A. Sovero, M. Kim, R. M. Weikle, D. Deakin +3 more
1992GaAs IC Symposium Technical Digest 19925 citations
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InP-based heterojunction bipolar transistors: performance status and circuit applications
P. Asbeck, C. Farley, M. Chang, K.-C. Wang +1 more
1990International Conference on Indium Phosphide and Related Materials5 citations
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ESD performance optimization of ballast resistor on power AlGaAs-GaAs heterojunction bipolar transistor technology
C.Y. Chu, G.-P. Li, W. Ho, Hsin-Yu Hsu +3 more
1999Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 (IEEE Cat. No.99TH8396)4 citations
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Heterojunction bipolar transistor technology for analog and digital applications
M. Chang, P. M. Asbeck, K.-C. Wang, Neng H. Sheng +3 more
1994International Electron Devices and Materials Symposium4 citations
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Performance tradeoffs in AlInAs/GaInAs single‐ and double‐heterojunction NpN heterojunction bipolar transistors
C. Farley, J. Higgins, W. Ho, B. Mcdermott +1 more
19923 citations
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10 bit 200 MSPS GaAs BiFET sample and hold circuit
J. Yu, S. Beccue, W. Ho, P. Zampardi +2 more
19952 citations
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Erratum: ‘‘Performance tradeoffs in AlInAs/GaInAs single‐ and double‐heterojunction NpN heterojunction bipolar transistors’’ [J. Vac. Sci. Technol. B 10, 1023 (1992)]
C. Farley, J. Higgins, W. Ho, B. Mcdermott +1 more
19922 citations
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62 GHz monolithic multistage indium phosphide-based HEMT amplifier
E. Sovero, D. Deakin, W. Ho, G. Robinson +3 more
199012th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC)2 citations
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A Non-Self Aligned InP HBT Production Process
Mike Sun, Jun-Tao Hu, W. Ho, G. Hu +6 more
20021 citations
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Microwave and thermal characteristics of backside-connected flip-chip power heterojunction bipolar transistors
Pin-Fan Chen, R. A. Johnson, M. Ho, W. Ho +3 more
19961 citations
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Base-collector capacitance reduction of AlGaAs/GaAs heterojunction bipolar transistors by deep ion implantation
M. Ho, R. A. Johnson, C. Chang, W. Ho +4 more
19951995 53rd Annual Device Research Conference Digest1 citations
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