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D. Lubyshev · SciRah

Researcher profile · Semantic Scholar

D. Lubyshev

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D. Lubyshev — researcher profile on SciRah

h-index: 22
Works: 91
Citations: 2,306

Most-cited papers

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
G. Dewey, B. Chu-Kung, J. Boardman, J. Fastenau +11 more
2011International Electron Devices Meeting346 citations
Semantic Scholar
High performance continuous wave 1.3 μm quantum dot lasers on silicon
Alan Y. Liu, Chong Zhang, J. Norman, A. Snyder +5 more
2014330 citations
Semantic Scholar
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey +11 more
2009International Electron Devices Meeting161 citations
Semantic Scholar
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation
M. Radosavljevic, G. Dewey, D. Basu, J. Boardman +16 more
2011International Electron Devices Meeting136 citations
Semantic Scholar
Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications
M. Radosavljevic, G. Dewey, J. Fastenau, J. Kavalieros +12 more
2010International Electron Devices Meeting100 citations
Semantic Scholar
Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current
D. Mohata, B. Rajamohanan, Theresa S. Mayer, M. Hudait +4 more
2012IEEE Electron Device Letters90 citations
Semantic Scholar
Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers
Z. Tian, R. Hinkey, Rui Q. Yang, D. Lubyshev +4 more
201283 citations
Semantic Scholar
Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications
M. Hudait, G. Dewey, Suman Datta, J. Fastenau +8 more
20072007 IEEE International Electron Devices Meeting82 citations
Semantic Scholar
Monolithic integration of InP-based transistors on Si substrates using MBE
W.-K. Liu, D. Lubyshev, J. Fastenau, Y. Wu +15 more
200955 citations
Semantic Scholar
Wideband DHBTs using a graded carbon-doped InGaAs base
M. Dahlstrom, Xiao-Ming Fang, D. Lubyshev, M. Urteaga +7 more
2003IEEE Electron Device Letters54 citations
Semantic Scholar
High operating temperature nBn detector with monolithically integrated microlens
A. Soibel, S. Keo, A. Fisher, C. Hill +7 more
201839 citations
Semantic Scholar
Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
Yizheng Zhu, N. Jain, S. Vijayaraghavan, D. Mohata +6 more
201238 citations Open access
Semantic Scholar
Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates
D. Lubyshev, J. Fastenau, Y. Wu, W.-K. Liu +3 more
200837 citations
Semantic Scholar
Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb
Neil Baril, Alexander Brown, P. Maloney, M. Tidrow +5 more
201636 citations
Semantic Scholar
Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates
X. Gu, D. Lubyshev, J. Batzel, J. Fastenau +7 more
200936 citations
Semantic Scholar
MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon
Alan Y. Liu, Chong Zhang, A. Snyder, D. Lubyshev +4 more
201435 citations
Semantic Scholar
Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
Yizheng Zhu, N. Jain, S. Vijayaraghavan, D. Mohata +6 more
201235 citations Open access
Semantic Scholar
InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/
Z. Griffith, M. Dahlstrom, M. Rodwell, X.-M. Fang +4 more
2005IEEE Electron Device Letters34 citations
Semantic Scholar
MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications
N. Mukherjee, J. Boardman, B. Chu-Kung, G. Dewey +12 more
2011International Electron Devices Meeting30 citations
Semantic Scholar
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
V. Djara, Veeresh Deshpande, E. Uccelli, N. Daix +16 more
2015Symposium on VLSI Technology28 citations
Semantic Scholar
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications
D. Lubyshev, J. Fastenau, X.-M. Fang, Y. Wu +6 more
200428 citations
Semantic Scholar
High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8 μm
Hossein Lotfi, Lin Lei, Lu Li, Rui Q. Yang +6 more
201522 citations
Semantic Scholar
MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers
J. Fastenau, D. Lubyshev, Yue-Ming Qiu, Amy W. K. Liu +3 more
201321 citations
Semantic Scholar
Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
Yizheng Zhu, N. Jain, D. Mohata, S. Datta +4 more
201321 citations
Semantic Scholar
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates
D. Lubyshev, W.-K. Liu, T. Stewart, A. Cornfeld +11 more
200121 citations
Semantic Scholar
InP-based quantum cascade lasers monolithically integrated onto silicon.
R. Go, H. Krysiak, M. Fetters, P. Figueiredo +11 more
2018Optics Express20 citations Open access
Semantic Scholar
Advanced High-K Gate Dielectric for High-Performance Short-Channel In 0 . 7 Ga
M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey +11 more
200920 citations
Semantic Scholar
Auger recombination in heavily carbon-doped GaAs
R. Ahrenkiel, R. Ellingson, W. Metzger, D. Lubyshev +1 more
200119 citations
Semantic Scholar
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices
E. Steenbergen, B. Connelly, G. Metcalfe, H. Shen +8 more
2012Other Conferences18 citations
Semantic Scholar
Characteristics of metal-ferroelectric-insulator-semiconductor diodes composed of Pt electrodes and epitaxial Sr0.8Bi2.2Ta2O9(001)/SrTiO3(100)/Si(100) structures
Xu-Bing Lu, H. Ishiwara, Xing fa Gu, D. Lubyshev +2 more
200918 citations
Semantic Scholar
Monolithic III-V/Si integration
E. Fitzgerald, M. Bulsara, Yu Bai, Cheng-Wei Cheng +15 more
20082008 9th International Conference on Solid-State and Integrated-Circuit Technology17 citations Open access
Semantic Scholar
Mid-wave interband cascade infrared photodetectors based on GaInAsSb absorbers
Lin Lei, Lu Li, Hossein Lotfi, Yuchao Jiang +6 more
201616 citations
Semantic Scholar
Sb-based IR photodetector epiwafers on 100 mm GaSb substrates manufactured by MBE
J. Fastenau, D. Lubyshev, Yue-Ming Qiu, Amy W. K. Liu +3 more
201316 citations
Semantic Scholar
Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration
J. Fastenau, D. Lubyshev, S. A. Nelson, M. Fetters +15 more
2019Journal of Vacuum Science & Technology B15 citations
Semantic Scholar
Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure
Yan Zhu, N. Jain, D. Mohata, S. Datta +4 more
201215 citations Open access
Semantic Scholar
Study of the valence band offsets between InAs and InAs1-xSbx alloys
E. Steenbergen, O. Cellek, D. Lubyshev, Yue-Ming Qiu +3 more
2012OPTO15 citations
Semantic Scholar
Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si
Xing fa Gu, D. Lubyshev, J. Batzel, J. Fastenau +5 more
201015 citations
Semantic Scholar
High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate
T. Kazior, J. Laroche, M. Urteaga, J. Bergman +15 more
20102010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)14 citations Open access
Semantic Scholar
MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors
D. Lubyshev, J. Fastenau, Xing fa Gu, Amy W. K. Liu +7 more
2010Defense + Commercial Sensing14 citations
Semantic Scholar
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
W.-K. Liu, D. Lubyshev, P. Specht, R. Zhao +7 more
200012 citations
Semantic Scholar
Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy
Yan Zhu, M. Hudait, D. Mohata, B. Rajamohanan +4 more
201311 citations
Semantic Scholar
Three-dimensional visualization of Sb segregation in InAs/InAsSb superlattices using atom probe tomography
N. Kotulak, J. Nolde, M. Katz, M. Twigg +5 more
202010 citations Open access
Semantic Scholar
100mm GaSb substrate manufacturing for IRFPA epi growth
L. Allen, J. P. Flint, Greg Meshew, G. Dallas +5 more
2012Defense + Commercial Sensing10 citations
Semantic Scholar
Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates
D. Lubyshev, Yue-Ming Qiu, J. Fastenau, Amy W. K. Liu +3 more
2012OPTO9 citations
Semantic Scholar
Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers
O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang +5 more
20029 citations
Semantic Scholar
MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates
Amy W. K. Liu, D. Lubyshev, Yue-Ming Qiu, J. Fastenau +6 more
2015Defense + Security Symposium8 citations
Semantic Scholar
InGaAs-InP Mesa DHBTs With Simultaneously High and and Low Ratio
Z. Griffith, M. Dahlstrom, M. Urteaga, M. Rodwell +4 more
20048 citations
Semantic Scholar
Molecular beam epitaxial growth and characterization of large-format GaSb-based IR photodetector structures [Invited]
Amy W. K. Liu, D. Lubyshev, J. Fastenau, S. A. Nelson +2 more
20187 citations Open access
Semantic Scholar
MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates
D. Lubyshev, J. Fastenau, Yue-Ming Qiu, Amy W. K. Liu +5 more
2013Defense, Security, and Sensing7 citations
Semantic Scholar
Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors
M. Yakes, S. Qadri, N. Mahadik, C. Yi +4 more
20127 citations
Semantic Scholar

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