Guangfan Jiao

Most-cited papers

1. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking

   Xinlv Duan, Kailiang Huang, Junxiao Feng, Jiebin Niu +18 more

   2022IEEE Transactions on Electron Devices154 citations

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2. Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

   W. Cao, Cheng-Jun Yao, Guangfan Jiao, Da-Ming Huang +2 more

   2011IEEE Transactions on Electron Devices138 citations

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3. Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

   Xuan-Qi Huang, Guangfan Jiao, W. Cao, Da-Ming Huang +6 more

   2010IEEE Electron Device Letters67 citations

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4. New degradation mechanisms and reliability performance in tunneling field effect transistors

   Guangfan Jiao, Z.-X. Chen, Hyun-Young Yu, X.-Y. Huang +5 more

   2009International Electron Devices Meeting67 citations

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5. Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

   Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun +20 more

   20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)52 citations

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6. Investigation of hot carrier degradation in bulk FinFET

   Eun-ae Chung, K. Nam, Toshiro Nakanishi, Sungil Park +8 more

   2017IEEE International Reliability Physics Symposium30 citations

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7. Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

   Qian Chen, Ling-Fei Wang, Xinlv Duan, Jingrui Guo +8 more

   2022IEEE Electron Device Letters26 citations

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8. Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability

   Jingrui Guo, Ying Sun, Ling-Fei Wang, Xinlv Duan +13 more

   20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)22 citations

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9. Positive bias temperature instability degradation of InGaAs n-MOSFETs with Al2O3 gate dielectric

   Guangfan Jiao, Wei Cao, Y. Xuan, Da-Ming Huang +2 more

   2011International Electron Devices Meeting22 citations

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10. Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

    Guangfan Jiao, Cheng-Jun Yao, Y. Xuan, Da-Ming Huang +2 more

    2012IEEE Transactions on Electron Devices21 citations

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11. Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

    Guangfan Jiao, Zhi-Xian Chen, Hyun-Young Yu, Xuan-Qi Huang +5 more

    2010IEEE Electron Device Letters18 citations

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12. Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

    Ming-Fu Li, Guangfan Jiao, Yaodong Hu, Y. Xuan +2 more

    2013IEEE transactions on device and materials reliability15 citations

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13. Low frequency noise in tunneling field effect transistors

    S. Bu, Da-Ming Huang, Guangfan Jiao, Hong-Yu Yu +1 more

    201714 citations

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14. PBTI-Induced Random Timing Jitter in Circuit-Speed Random Logic

    Ji-Wu Lu, Guangfan Jiao, Canute Vaz, J. Campbell +4 more

    2014IEEE Transactions on Electron Devices13 citations

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15. Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\bf 2}$O$_{\bf 3}$ n-FinFETs

    Yaodong Hu, Sheng-Wei Li, Guangfan Jiao, Y. Wu +3 more

    2013IEEE transactions on nanotechnology10 citations

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16. Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

    Guangfan Jiao, M. Toledano-Luque, K. Nam, Toshiro Nakanishi +8 more

    2016International Electron Devices Meeting8 citations

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17. Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al 2 O 3 Gate Dielectric Under PBTI Stress

    Guangfan Jiao, Cheng-Jun Yao, Y. Xuan, P. Ye

    20166 citations

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18. Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking

    Xinlv Duan, Kailiang Huang, Junxiao Feng, Jiebin Niu +15 more

    2021International Electron Devices Meeting4 citations

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19. Device-level PBTI-induced timing jitter increase in circuit-speed random logic operation

    Ji-Wu Lu, Canute Vaz, J. Campbell, J. T. Ryan +4 more

    2014Symposium on VLSI Technology4 citations

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20. Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

    Yaodong Hu, Sheng-Wei Li, Guangfan Jiao, Yan-Qing Wu +3 more

    20134 citations

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21. Circuit speed timing jitter increase in random logic operation after NBTI stress

    Guangfan Jiao, Ji-Wu Lu, J. Campbell, J. T. Ryan +3 more

    2014IEEE International Reliability Physics Symposium3 citations

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22. A reliability model for CMOS circuit based on device degradation

    J. Peng, Da-Ming Huang, Guangfan Jiao, Ming-Fu Li

    2012IEEE International Conference on Solid-State and Integrated Circuit Technology3 citations

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23. Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter

    Guangfan Jiao, Ji-Wu Lu, J. Campbell, J. T. Ryan +3 more

    2014IEEE transactions on device and materials reliability2 citations

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24. Hole trap effect on time-dependent-dielectric breakdown (TDDB) of high-voltage peripheral nMOSFETs in flash memory application

    Guangfan Jiao, S. Baek, K. Nam, Sung-Il Chang +10 more

    2017IEEE International Reliability Physics Symposium1 citations

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25. Impact of BTI on random logic circuit critical timing

    Kin P. Cheung, Ji-Wu Lu, Guangfan Jiao, Canute Vaz +2 more

    2014IEEE International Conference on Solid-State and Integrated Circuit Technology1 citations

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26. Investigation of tunneling field effect transistor reliability

    Guangfan Jiao, Xuan-Qi Huang, Zhi-Xian Chen, Wei Cao +6 more

    2010IEEE International Conference on Solid-State and Integrated Circuit Technology1 citations

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27. SEMICONDUCTOR DEVICES: Diagram representations of charge pumping processes in CMOS transistors

    Xin-Yu Huang, Guangfan Jiao, Chen Shen, W. Cao +2 more

    20101 citations

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28. 27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Length 3D Monolithically Stackable Vertical IGZO TFTs for Active‐Matrix Application

    Xinlv Duan, Kailiang Huang, Junxiao Feng, Shihui Yin +15 more

    2022SID Symposium Digest of Technical Papers0 citations

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29. Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

    Guangfan Jiao, T. Maria, K. Nam, Toshiro Nakanishi +8 more

    20160 citations

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30. SRB上のSiGe pMOSFETの負バイアス温度不安定性(NBTI)に及ぼすアクセプタ様トラップ効果【Powered by NICT】

    Guangfan Jiao, T. Maria, K. Nam, Toshiro Nakanishi +8 more

    20160 citations

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31. Reliability of inversion channel InGaAs n-MOSFETs

    Ming-Fu Li, Guangfan Jiao, Y. Xuan, Da-Ming Huang +1 more

    2012IEEE International Conference on Solid-State and Integrated Circuit Technology0 citations

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32. Diagram representations of charge pumping processes in CMOS transistors

    Xin-Yu Huang, Guangfan Jiao, Chen Shen, W. Cao +2 more

    20100 citations

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33. Diagram representations of charge pumping processes in CMOS transistors

    Xin-Yu Huang, Guangfan Jiao, Chen Shen, W. Cao +2 more

    20100 citations

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34. Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides

    Wen-Jun Liu, Z.-Y. Liu, Y. Luo, Guangfan Jiao +7 more

    20082008 9th International Conference on Solid-State and Integrated-Circuit Technology0 citations

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