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J. Ajayan · SciRah

Researcher profile · Semantic Scholar

J. Ajayan

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J. Ajayan — researcher profile on SciRah

h-index: 25
Works: 105
Citations: 1,978

Most-cited papers

Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
B. Mounika, J. Ajayan, S. Bhattacharya, D. Nirmal
2022Micro and Nanostructures104 citations
Semantic Scholar
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
J. Ajayan, D. Nirmal, P. Mohankumar, B. Mounika +3 more
2022Materials Science in Semiconductor Processing101 citations
Semantic Scholar
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J. Ajayan, D. Nirmal, Shubham Tayal, S. Bhattacharya +4 more
2021Microelectronics Journal92 citations
Semantic Scholar
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
A. S. Augustine Fletcher, D. Nirmal, J. Ajayan, L. Arivazhagan
2019AEU - International Journal of Electronics and Communications70 citations
Semantic Scholar
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J. Ajayan, D. Nirmal, P. Prajoon, J. Pravin
201765 citations
Semantic Scholar
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
J. Ajayan, D. Nirmal, T. Ravichandran, P. Mohankumar +3 more
2018AEU - International Journal of Electronics and Communications56 citations
Semantic Scholar
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
Sresta Valasa, Shubham Tayal, L. R. Thoutam, J. Ajayan +1 more
2022Micro and Nanostructures54 citations
Semantic Scholar
AlexNet‐NDTL: Classification of MRI brain tumor images using modified AlexNet with deep transfer learning and Lipschitz‐based data augmentation
S. Kollem, K. Reddy, Ch.Rajendra Prasad, Avishek Chakraborty +5 more
2023International journal of imaging systems and technology (Print)50 citations Open access
Semantic Scholar
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D. Nirmal, L. Arivazhagan, A. S. Augustine Fletcher, J. Ajayan +1 more
201744 citations
Semantic Scholar
Ferroelectric Field Effect Transistors (FeFETs):Advancements, Challenges and Exciting Prospects for Next Generation Non-Volatile Memory (NVM) Applications
J. Ajayan, P. Mohankumar, D. Nirmal, L. M. I. Leo Joseph +6 more
2023Materials Today Communications40 citations
Semantic Scholar
A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications
J.S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan +2 more
2023Microelectronics Journal39 citations
Semantic Scholar
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
J. Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan +3 more
2019Microelectronics Journal39 citations
Semantic Scholar
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
L. Arivazhagan, D. Nirmal, D. Godfrey, J. Ajayan +4 more
2019AEU - International Journal of Electronics and Communications38 citations
Semantic Scholar
An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT
A. S. Augustine Fletcher, D. Nirmal, J. Ajayan, L. Arivazhagan
2020Silicon37 citations
Semantic Scholar
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
A. S. Augustine Fletcher, D. Nirmal, L. Arivazhagan, J. Ajayan +1 more
2019International journal of RF and microwave computer-aided engineering36 citations Open access
Semantic Scholar
A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
J. Ajayan, D. Nirmal, R. Mathew, Dheena Kurian +3 more
202135 citations
Semantic Scholar
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
J. Ajayan, D. Nirmal
201735 citations
Semantic Scholar
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
J. Ajayan, D. Nirmal, R. Ramesh, S. Bhattacharya +4 more
2021Measurement33 citations
Semantic Scholar
Handbook for III-V High Electron Mobility Transistor Technologies
D. Nirmal, J. Ajayan
201931 citations
Semantic Scholar
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
K. Hamza, D. Nirmal, A. S. Augustine Fletcher, L. Arivazhagan +2 more
2021AEU - International Journal of Electronics and Communications30 citations
Semantic Scholar
A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective
Shubham Tayal, J. Ajayan, L. M. I. Leo Joseph, J. Tarunkumar +3 more
2021Silicon29 citations
Semantic Scholar
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications
B. Mounika, J. Ajayan, Sandip Bhattacharya
2024Materials Science and Engineering: B25 citations
Semantic Scholar
A review of blue light emitting diodes for future solid state lighting and visible light communication applications
M. Manikandan, D. Nirmal, J. Ajayan, P. Mohankumar +2 more
201925 citations
Semantic Scholar
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
J. Pravin, D. Nirmal, P. Prajoon, N. M. Kumar +1 more
201725 citations
Semantic Scholar
Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications
L. Arivazhagan, D. Nirmal, A. Jarndal, H. Huq +5 more
2021Superlattices and Microstructures23 citations
Semantic Scholar
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
K. Hamza, D. Nirmal, A. S. Augustine Fletcher, J. Ajayan +1 more
2022Materials Science and Engineering: B22 citations
Semantic Scholar
Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications
J.S. Raj Kumar, D. Nirmal, M. Hooda, Surinder Singh +2 more
2021Silicon22 citations
Semantic Scholar
Investigation of DC-RF and breakdown behaviour in Lg = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon +2 more
201821 citations
Semantic Scholar
Investigation of breakdown performance in $$L_{g}$$Lg= 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
J. Ajayan, T. Ravichandran, P. Prajoon, J. Pravin +1 more
201820 citations
Semantic Scholar
20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications
J. Ajayan, T. Subash, Dheena Kurian
201719 citations
Semantic Scholar
22 nm In 0.75 Ga 0.25 As channel-based HEMTs on InP/GaAs substrates for future THz applications
J. Ajayan, D. Nirmal
201719 citations Open access
Semantic Scholar
Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors
P. Murugapandiyan, D. Nirmal, J. Ajayan, Arathy Varghese +1 more
2021Silicon17 citations
Semantic Scholar
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
P. Murugapandiyan, D. Nirmal, Md Tanvir Hasan, Arathy Varghese +3 more
2021Materials Science and Engineering: B17 citations Open access
Semantic Scholar
Investigation of Nanosheet-FET Based Logic Gates at Sub-7 nm Technology Node for Digital IC Applications
Shubham Tayal, Sresta Valasa, S. Bhattacharya, J. Ajayan +3 more
2022Silicon16 citations
Semantic Scholar
DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
P. Murugapandiyan, S. Ravimaran, J. William, J. Ajayan +1 more
201716 citations
Semantic Scholar
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications
B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal +2 more
2023Microelectronics Journal15 citations
Semantic Scholar
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
Gauri Deshpande, Sandip Bhattacharya, J. Ajayan, B. Mounika +1 more
2024Journal of Electronic Materials14 citations
Semantic Scholar
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications
B. Mounika, J. Ajayan, Sandip Bhattacharya
2023Microelectronic Engineering14 citations
Semantic Scholar
Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications
J. Ajayan, P. Mohankumar, R. Mathew, L. R. Thoutam +2 more
2023IEEE Transactions on Electron Devices14 citations
Semantic Scholar
Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics
B. Mounika, J. Ajayan, S. Bhattacharya, D. Nirmal
2022Micro and Nanostructures14 citations
Semantic Scholar
Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications
Shubham Tayal, B. Smaani, Dr. Shiromani Balmukund Rahi, A. Upadhyay +6 more
2022IEEE Transactions on Electron Devices14 citations
Semantic Scholar
Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs
P. Murugapandiyan, M. Hasan, V. R. Lakshmi, Mohd. Wasim +3 more
202014 citations
Semantic Scholar
Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging
J. Ajayan, D. Nirmal, P. Mohankumar, L. Arivazhagan
2019Silicon14 citations
Semantic Scholar
A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens
Lavanya Repaka, J. Ajayan, Sandip Bhattacharya, B. Mounika +2 more
2024Microsystem Technologies13 citations
Semantic Scholar
Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor
R. Sridevi, J. Pravin, A. Babu, J. Ajayan
2021Journal of Electronic Materials13 citations
Semantic Scholar
Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications
B. Mounika, J. Ajayan, Sandip Bhattacharya
2023Micro and Nanostructures12 citations
Semantic Scholar
60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites
A. S. Augustine Fletcher, D. Nirmal, J. Ajayan, L. Arivazhagan +2 more
2021Silicon11 citations Open access
Semantic Scholar
Aggressively Scaled T-Gated GaN-on-Silicon RF Power HEMT Featuring Step Graded SRL-AlGaN Buffer for Next Generation Broad Band Power Amplifiers
A. Akshaykranth, J. Ajayan, Sandip Bhattacharya, D. Nirmal +3 more
2025Results in Engineering9 citations Open access
Semantic Scholar
Comprehensive evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 dielectrics towards performance enhancement through lateral scaling and passivation optimization for power switching and RF applications
Lavanya Repaka, J. Ajayan, Sandip Bhattacharya, B. Mounika
2025Micro and Nanostructures9 citations
Semantic Scholar
Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier
P. Prajoon, M. A. Menokey, J. Pravin, J. Ajayan +2 more
20189 citations
Semantic Scholar

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