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Ju-bong Park · SciRah

Researcher profile · Semantic Scholar

Ju-bong Park

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Ju-bong Park — researcher profile on SciRah

h-index: 30
Works: 77
Citations: 3,200

Most-cited papers

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
K. Seo, In-sung Kim, Seungjae Jung, M. Jo +8 more
2011Nanotechnology277 citations Open access
Semantic Scholar
Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
Myungwoo Son, Joonmyoung Lee, Ju-bong Park, Jungho Shin +6 more
2011IEEE Electron Device Letters252 citations
Semantic Scholar
RRAM-based synapse for neuromorphic system with pattern recognition function
Sangsu Park, H. Kim, M. Choo, J. Noh +17 more
2012International Electron Devices Meeting175 citations
Semantic Scholar
TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
Jungho Shin, In-sung Kim, K. P. Biju, M. Jo +7 more
2011155 citations
Semantic Scholar
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
Joonmyoung Lee, E. Bourim, Wootae Lee, Ju-bong Park +4 more
2010147 citations
Semantic Scholar
High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arrays.
Wootae Lee, Ju-bong Park, Seonghyun Kim, J. Woo +7 more
2012ACS Nano144 citations
Semantic Scholar
An electrically modifiable synapse array of resistive switching memory
Hye-jung Choi, Hee-Soo Jung, Joonmyoung Lee, Jaesik Yoon +6 more
2009Nanotechnology144 citations
Semantic Scholar
Carbon nanotubes synthesized by Ni-assisted atmospheric pressure thermal chemical vapor deposition
G. Choi, Soo-Cho Yong, S. Hong, Ju-bong Park +2 more
2002118 citations
Semantic Scholar
Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications
Joonmyoung Lee, Jungho Shin, Daeseok Lee, Wootae Lee +7 more
2010International Electron Devices Meeting103 citations
Semantic Scholar
Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
Xinjun Liu, S. Sadaf, Myungwoo Son, Jungho Shin +4 more
2011Nanotechnology97 citations
Semantic Scholar
Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering
Ju-bong Park, K. P. Biju, Seungjae Jung, Wootae Lee +5 more
2011IEEE Electron Device Letters96 citations
Semantic Scholar
Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
Seonghyun Kim, Xinjun Liu, Ju-bong Park, Seungjae Jung +13 more
2012Symposium on VLSI Technology93 citations Open access
Semantic Scholar
Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications
Jaesik Yoon, Hye-jung Choi, Dongsoo Lee, Ju-bong Park +6 more
2009IEEE Electron Device Letters78 citations
Semantic Scholar
Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
Wootae Lee, Ju-bong Park, Jungho Shin, J. Woo +10 more
2012Symposium on VLSI Technology71 citations
Semantic Scholar
Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications
Xinjun Liu, S. Sadaf, Myungwoo Son, Ju-bong Park +5 more
2012IEEE Electron Device Letters65 citations Open access
Semantic Scholar
Accelerated Publication: Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
Seonghyun Kim, Ju-bong Park, J. Woo, C. Cho +7 more
201357 citations
Semantic Scholar
Investigation of State Stability of Low-Resistance State in Resistive Memory
Ju-bong Park, M. Jo, E. Bourim, Jaesik Yoon +4 more
2010IEEE Electron Device Letters55 citations
Semantic Scholar
Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
Myungwoo Son, Xinjun Liu, S. Sadaf, Daeseok Lee +8 more
2012IEEE Electron Device Letters52 citations
Semantic Scholar
Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications
Dong-jun Seong, Musarrat Hassan, Hye-jung Choi, Joonmyoung Lee +5 more
2009IEEE Electron Device Letters52 citations
Semantic Scholar
Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics
Seonghyun Kim, K. P. Biju, M. Jo, Seungjae Jung +6 more
2011IEEE Electron Device Letters43 citations
Semantic Scholar
Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications
Dong-jun Seong, Ju-bong Park, N. Lee, M. Hasan +16 more
2009International Electron Devices Meeting39 citations
Semantic Scholar
Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films
K. P. Biju, Xinjun Liu, Seonghyun Kim, Seungjae Jung +2 more
201136 citations Open access
Semantic Scholar
Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect
Ju-bong Park, M. Jo, Joonmyoung Lee, Seungjae Jung +4 more
2011IEEE Electron Device Letters35 citations
Semantic Scholar
Resistive switching characteristics of ultra-thin TiOx
Ju-bong Park, Seungjae Jung, Joonmyoung Lee, Wootae Lee +3 more
201135 citations
Semantic Scholar
Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications
Sangsu Park, Seungjae Jung, M. Siddik, M. Jo +10 more
201234 citations
Semantic Scholar
Quantized conductive filament formed by limited Cu source in sub-5nm era
Ju-bong Park, Wootae Lee, M. Choe, Seungjae Jung +11 more
2011International Electron Devices Meeting34 citations
Semantic Scholar
Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications
Hye-jung Choi, M. Pyun, Tae-Wook Kim, Musarrat Hasan +7 more
2009IEEE Electron Device Letters34 citations
Semantic Scholar
Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications
M. Pyun, Hye-jung Choi, Ju-bong Park, Dongsoo Lee +7 more
200832 citations
Semantic Scholar
Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
Wootae Lee, Ju-bong Park, Seonghyun Kim, J. Woo +4 more
201231 citations Open access
Semantic Scholar
Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks
Daeseok Lee, Joonmyoung Lee, M. Jo, Ju-bong Park +2 more
2011IEEE Electron Device Letters30 citations
Semantic Scholar
The rapid growth of vertically aligned carbon nanotubes using laser heating
Ju-bong Park, S. Jeong, M. S. Jeong, S. Lim +2 more
2009Nanotechnology30 citations
Semantic Scholar
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
Seonghyun Kim, Daeseok Lee, Ju-bong Park, Seungjae Jung +5 more
2012Nanotechnology29 citations Open access
Semantic Scholar
Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications
Wootae Lee, Ju-bong Park, Myungwoo Son, Joonmyoung Lee +5 more
2011IEEE Electron Device Letters29 citations
Semantic Scholar
Improved Switching Variability and Stability by Activating a Single Conductive Filament
Ju-bong Park, Seungjae Jung, Wootae Lee, Seonghyun Kim +4 more
2012IEEE Electron Device Letters27 citations
Semantic Scholar
Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM
Jungho Shin, Ju-bong Park, Joonmyoung Lee, Sangsu Park +5 more
2011IEEE Electron Device Letters27 citations
Semantic Scholar
Scaling effect of device area and film thickness on electrical and reliability characteristics of RRAM
Joonmyoung Lee, Ju-bong Park, Seungjae Jung, H. Hwang
20112011 IEEE International Interconnect Technology Conference27 citations
Semantic Scholar
Parallel memristive filaments model applicable to bipolar and filamentary resistive switching
Xinjun Liu, K. P. Biju, Joonmyoung Lee, Ju-bong Park +5 more
201126 citations
Semantic Scholar
Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations
Seonghyun Kim, Ju-bong Park, Seungjae Jung, Wootae Lee +7 more
201126 citations
Semantic Scholar
Novel cross-point resistive switching memory with self-formed schottky barrier
M. Jo, Dong-jun Seong, Seonghyun Kim, Joonmyoung Lee +7 more
2010Symposium on VLSI Technology25 citations
Semantic Scholar
Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
Seungjae Jung, M. Siddik, Wootae Lee, Ju-bong Park +7 more
2011International Electron Devices Meeting22 citations
Semantic Scholar
A 26mW dual-mode RF receiver for GPS/Galileo with L1/L1F and L5/E5a bands
Yo-Sup Moon, Sanghyun Cha, G. Kim, K. Park +4 more
2008International SoC Design Conference22 citations
Semantic Scholar
Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer
Sangsu Park, Seungjae Jung, M. Siddik, M. Jo +7 more
201121 citations
Semantic Scholar
Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications
M. Siddik, Seungjae Jung, Ju-bong Park, Wootae Lee +7 more
201120 citations
Semantic Scholar
Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes
Wootae Lee, G. Jo, S. C. Lee, Ju-bong Park +8 more
201120 citations
Semantic Scholar
Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices
Tae-Wook Kim, Seung-Hwan Oh, Joonmyoung Lee, Hye-jung Choi +5 more
201020 citations
Semantic Scholar
Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer
Doo-in Kim, Jaesik Yoon, Ju-bong Park, H. Hwang +3 more
201119 citations
Semantic Scholar
New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory
Ju-bong Park, M. Jo, Seungjae Jung, Joonmyoung Lee +5 more
2011IEEE Electron Device Letters19 citations
Semantic Scholar
Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
Daeseok Lee, Ju-bong Park, Seungjae Jung, G. Choi +6 more
2012IEEE Electron Device Letters17 citations
Semantic Scholar
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications
Jaesik Yoon, Joonmyoung Lee, Hye-jung Choi, Ju-bong Park +5 more
200917 citations
Semantic Scholar
MIM-type cell selector for high-density and low-power cross-point memory application
Jungho Shin, G. Choi, J. Woo, Ju-bong Park +5 more
201215 citations
Semantic Scholar

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