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T. Ishigaki · SciRah

Researcher profile · Semantic Scholar

T. Ishigaki

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T. Ishigaki — researcher profile on SciRah

h-index: 15
Works: 42
Citations: 779

Most-cited papers

Local $V_{\rm th}$ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation
N. Sugii, Ryuta Tsuchiya, T. Ishigaki, Yusuke Morita +2 more
2010IEEE Transactions on Electron Devices112 citations
Semantic Scholar
A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions
T. Ishigaki, Takayuki Kawahara, R. Takemura, K. Ono +3 more
2010Symposium on VLSI Technology108 citations
Semantic Scholar
Smallest Vth variability achieved by intrinsic silicon on thin BOX (SOTB) CMOS with single metal gate
Y. Morita, Ryuta Tsuchiya, T. Ishigaki, N. Sugii +6 more
2008Symposium on VLSI Technology78 citations
Semantic Scholar
Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs
T. Ishigaki, T. Murata, K. Kinoshita, T. Morikawa +5 more
2019International Symposium on Power Semiconductor Devices and IC's60 citations
Semantic Scholar
Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation
N. Sugii, Ryuta Tsuchiya, T. Ishigaki, Yusuke Morita +3 more
20082008 IEEE International Electron Devices Meeting54 citations
Semantic Scholar
Ultralow-power LSI Technology with Silicon on Thin Buried Oxide (SOTB) CMOSFET
T. Ishigaki, R. Tsuchiya, Y. Morita, N. Sugii
201033 citations Open access
Semantic Scholar
3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching
T. Ishigaki, S. Hayakawa, T. Murata, T. Nozoe +10 more
201726 citations
Semantic Scholar
Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates
K. Mochizuki, T. Mishima, A. Terano, N. Kaneda +2 more
2011IEEE Transactions on Electron Devices26 citations
Semantic Scholar
Controllable Inverter Delay and Suppressing Vth Fluctuation Technology in Silicon on Thin BOX Featuring Dual Back-Gate Bias Architecture
Ryuta Tsuchiya, T. Ishigaki, Yusuke Morita, M. Yamaoka +7 more
20072007 IEEE International Electron Devices Meeting26 citations
Semantic Scholar
Improvement of power cycling reliability of 3.3kV full-SiC power modules with sintered copper technology for Tj, max=175°C
K. Yasui, S. Hayakawa, Masato Nakamura, Daisuke Kawase +7 more
2018International Symposium on Power Semiconductor Devices and IC's25 citations
Semantic Scholar
Effects of Device Structure and Back Biasing on HCI and NBTI in Silicon-on-Thin-BOX (SOTB) CMOSFET
T. Ishigaki, Ryuta Tsuchiya, Yusuke Morita, N. Sugii +1 more
2011IEEE Transactions on Electron Devices25 citations
Semantic Scholar
Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster
T. Ishigaki, Ryuta Tsuchiya, Y. Morita, H. Yoshimoto +7 more
2008European Solid-State Device Research Conference24 citations
Semantic Scholar
Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd
N. Tega, H. Yoshimoto, D. Hisamoto, Naoki Watanabe +12 more
2015International Symposium on Power Semiconductor Devices and IC's19 citations
Semantic Scholar
Low voltage (Vdd∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX)
Ryuta Tsuchiya, N. Sugii, T. Ishigaki, Y. Morita +3 more
2006Symposium on VLSI Technology18 citations
Semantic Scholar
A 3.3 kV / 800 A Ultra-High Power Density SiC Power Module
T. Ishigaki, S. Hayakawa, T. Murata, Toshihito Tabata +18 more
201815 citations
Semantic Scholar
Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates
K. Mochizuki, K. Nomoto, Yoshitomo Hatakeyama, H. Katayose +7 more
2012IEEE Transactions on Electron Devices15 citations
Semantic Scholar
Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode
T. Ishigaki, R. Tsuchiya, Yusuke Morita, N. Sugii +5 more
200815 citations Open access
Semantic Scholar
Photon-recycling GaN p-n diodes demonstrating temperature-independent, extremely low on-resistance
K. Mochizuki, K. Nomoto, Yoshitomo Hatakeyama, H. Katayose +7 more
2011International Electron Devices Meeting14 citations
Semantic Scholar
A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers
T. Niwa, T. Ishigaki, Hidenori Shimawaki, Y. Nashimoto
2003IEEE MTT-S International Microwave Symposium Digest14 citations
Semantic Scholar
Diode-Less SiC Power Module With Countermeasures Against Bipolar Degradation to Achieve Ultrahigh Power Density
T. Ishigaki, S. Hayakawa, T. Murata, T. Masuda +2 more
2020IEEE Transactions on Electron Devices12 citations
Semantic Scholar
Freewheeling Diode-Less SiC-Inverter with Fast Short-Circuit Protection for Industrial Applications
T. Ishigaki, H. Kageyama, A. Shima, D. Hisamoto +3 more
201512 citations
Semantic Scholar
Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
K. Mochizuki, A. Terano, N. Kaneda, T. Mishima +2 more
20119 citations Open access
Semantic Scholar
Device Design Consideration for Robust SiC VDMOSFET With Self-Aligned Channels Formed by Tilted Implantation
T. Morikawa, T. Ishigaki, A. Shima
2019IEEE Transactions on Electron Devices7 citations
Semantic Scholar
Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current
N. Sugii, R. Tsuchiya, T. Ishigaki, Yusuke Morita +6 more
20097 citations
Semantic Scholar
Design of self-aligned 3.3-kV DMOSFET using tilted ion implantation
T. Morikawa, T. Ishigaki, A. Shima
2017International Symposium on Power Semiconductor Devices and IC's6 citations
Semantic Scholar
3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode
Akio Shima, H. Shimizu, Yuki Mori, M. Sagawa +7 more
20162016 European Conference on Silicon Carbide & Related Materials (ECSCRM)4 citations Open access
Semantic Scholar
Numerical Determination of Schottky Barrier Height of Nickel/n-Type Gallium Nitride Diodes Formed on Free-standing Substrates
K. Mochizuki, A. Terano, T. Ishigaki, T. Tsuchiya +2 more
20143 citations
Semantic Scholar
HCI and NBTI including the effect of back-biasing in thin-BOX FD-SOI CMOSFETs
T. Ishigaki, Ryuta Tsuchiya, Y. Morita, H. Yoshimoto +2 more
2010IEEE International Reliability Physics Symposium3 citations
Semantic Scholar
Enhancement-mode power heterojunction FET utilizing re-grown p/sup +/-GaAs gate with negligible off-state leakage current
Y. Bito, T. Ishigaki, Hidenori Shimawaki, Y. Nashimoto
2003IEEE MTT-S International Microwave Symposium Digest3 citations
Semantic Scholar
Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers
T. Niwa, T. Ishigaki, N. Kurosawa, H. Shimawaki +1 more
2005IEICE transactions on electronics2 citations
Semantic Scholar
Multilayer Cermaic Capacitors Incorporating Nickel Internal Electrodes and Ultra Thin Dielectric Layers
R. Kobayashi, T. Ishigaki, M. Fujimoto, O. Otani +1 more
1997IEMT/IMC Symposium, 1st [Joint International Electronic Manufacturing Symposium and the International Microelectronics Conference]2 citations
Semantic Scholar
Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current
N. Sugii, R. Tsuchiya, T. Ishigaki, Y. Morita +6 more
20081 citations
Semantic Scholar
Wide-Range Vth Controllable SOTB (Silicon on Thin BOX) Integrated with Bulk CMOS Featuring Fully Silicided NiSi Gate Electrode
T. Ishigaki, R. Tsuchiya, Y. Morita, N. Sugii +5 more
20071 citations
Semantic Scholar
Development of Bus Bar Structure with Low Imbalance in Stray Inductance for Three-phase Silicon Carbide Inverter
M. Ando, T. Masuda, Y. Mori, A. Shima +10 more
2018EPE0 citations
Semantic Scholar
Semiconductor device and manufacturing method thereof and power conversion device
T. Ishigaki, R. Tsuchiya
20130 citations
Semantic Scholar
A study on silicon-on-thin-BOX(SOTB) CMOSFET for low-power LSIs
T. Ishigaki, H. Iwai, N. Sugii
20120 citations
Semantic Scholar
Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors
T. Ishigaki, R. Tsuchiya, Yusuke Morita, N. Sugii +4 more
20120 citations Open access
Semantic Scholar
Photon-recycling GaN p+n Diodes
Mochizuki Kazuhiro, K. Nomoto, Yoshitomo Hatakeyama, Katayose Hideo +8 more
20120 citations
Semantic Scholar
超低電力CMOSに向けた薄膜BOX‐SOI(SOTB)のGIDL電流とインバータ遅延時間の最適化
Yusuke Morita, Ryuta Tsuchiya, T. Ishigaki, Sugii Nobuyuki +5 more
20080 citations
Semantic Scholar
超低電力CMOSに向けた薄膜BOX-SOI(SOTB)のGIDL電流とインバータ遅延時間の最適化 | Article Information | J-GLOBAL
Yusuke Morita, Ryuta Tsuchiya, T. Ishigaki, Sugii Nobuyuki +5 more
20080 citations
Semantic Scholar
Controllable Inverter DelayandSuppressing VthFluctuation Technology inSilicon onThinBOX Featuring DualBack-Gate BiasArchitecture
T. Ishigaki, Y. Morita, M. Yamaoka, Toshiaki Iwamatsul +2 more
20070 citations
Semantic Scholar
Operation of Ultra-Thin-Film SOI/SIMOX pMOSFET's at Liquid Nitrogen Temperature
K. Sukegawa, T. Ishigaki, S. Kawamura
19910 citations
Semantic Scholar

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Ryuta Tsuchiya×12
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N. Sugii×9
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Yusuke Morita×9
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A. Shima — researcher profile on SciRah

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T. Mishima — researcher profile on SciRah

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T. Tsuchiya — researcher profile on SciRah