Skip to content

Home Search Authors Pakistan News Saved

SciRah

SciRah does not host or store research papers. Results come live from free, official scholarly APIs, and every paper links back to its original source.

Data sources

OpenAlex
Semantic Scholar
Crossref
CORE
arXiv
PubMed

Privacy policy Terms of service

S. Nakaharai · SciRah

Researcher profile · Semantic Scholar

S. Nakaharai

Share profile

S. Nakaharai — researcher profile on SciRah

h-index: 32
Works: 148
Citations: 4,848

Most-cited papers

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
Yen-Fu Lin, Yong Xu, Sheng-Tsung Wang, Song-Lin Li +8 more
2014Advances in Materials452 citations
Semantic Scholar
Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates.
Song-Lin Li, H. Miyazaki, Hai-Sheng Song, H. Kuramochi +2 more
2012ACS Nano382 citations Open access
Semantic Scholar
Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.
Song-Lin Li, K. Wakabayashi, Yong Xu, S. Nakaharai +5 more
2013Nano letters (Print)342 citations Open access
Semantic Scholar
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
Shinichi Takagi, Toshifumi Iisawa, T. Tezuka, Toshinori Numata +11 more
2008IEEE Transactions on Electron Devices324 citations
Semantic Scholar
Self-limiting layer-by-layer oxidation of atomically thin WSe2.
Mahito Yamamoto, S. Dutta, S. Aikawa, S. Nakaharai +4 more
2015Nano letters (Print)238 citations
Semantic Scholar
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.
Mahito Yamamoto, S. Nakaharai, K. Ueno, K. Tsukagoshi
2016Nano letters (Print)187 citations Open access
Semantic Scholar
Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.
Song-Lin Li, K. Komatsu, S. Nakaharai, Yen-Fu Lin +3 more
2014ACS Nano180 citations Open access
Semantic Scholar
Device structures and carrier transport properties of advanced CMOS using high mobility channels
S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai +6 more
2007137 citations
Semantic Scholar
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.
S. Nakaharai, Mahito Yamamoto, K. Ueno, Yen-Fu Lin +2 more
2015ACS Nano130 citations
Semantic Scholar
Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.
M. Chan, K. Komatsu, Song-Lin Li, Yong Xu +7 more
2013Nanoscale87 citations
Semantic Scholar
Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors
Yen-Fu Lin, Yong Xu, Che-Yi Lin, Y. Suen +4 more
2015Advances in Materials86 citations
Semantic Scholar
Conduction tuning of graphene based on defect-induced localization.
S. Nakaharai, T. Iijima, S. Ogawa, Shingo Suzuki +4 more
2013ACS Nano83 citations
Semantic Scholar
Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.
S. Nakaharai, Mahito Yamamoto, K. Ueno, K. Tsukagoshi
2016ACS Applied Materials and Interfaces78 citations
Semantic Scholar
Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures
Bablu Mukherjee, A. Zulkefli, Kenji Watanabe, T. Taniguchi +2 more
2020Advanced Functional Materials76 citations Open access
Semantic Scholar
Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures.
T. Iwasaki, Kosuke Endo, E. Watanabe, D. Tsuya +7 more
2020ACS Applied Materials and Interfaces74 citations
Semantic Scholar
Barrier inhomogeneities at vertically stacked graphene-based heterostructures.
Yen-Fu Lin, Wen-Wu Li, Song-Lin Li, Yong Xu +5 more
2014Nanoscale64 citations
Semantic Scholar
Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor
R. Hayakawa, K. Honma, S. Nakaharai, Kaname Kanai +1 more
2022Advances in Materials47 citations Open access
Semantic Scholar
Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process
N. Hirashita, Y. Moriyama, S. Nakaharai, T. Irisawa +2 more
200846 citations Open access
Semantic Scholar
Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique
S. Nakaharai, T. Tezuka, N. Hirashita, E. Toyoda +3 more
200945 citations
Semantic Scholar
Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation.
A. Zulkefli, Bablu Mukherjee, R. Sahara, R. Hayakawa +3 more
2021ACS Applied Materials and Interfaces39 citations
Semantic Scholar
The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process
S. Nakaharai, T. Tezuka, N. Hirashita, E. Toyoda +3 more
2006International SiGe Technology and Device Meeting35 citations Open access
Semantic Scholar
Edge mixing dynamics in graphene p–n junctions in the quantum Hall regime
S. Matsuo, S. Takeshita, Takahiro Tanaka, S. Nakaharai +4 more
2015Nature Communications33 citations Open access
Semantic Scholar
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process
T. Tezuka, Y. Moriyama, S. Nakaharai, N. Sugiyama +4 more
200632 citations
Semantic Scholar
Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes
Bablu Mukherjee, A. Zulkefli, R. Hayakawa, Y. Wakayama +1 more
2019ACS Photonics31 citations
Semantic Scholar
Gate-defined graphene quantum point contact in the quantum Hall regime.
S. Nakaharai, James R. Williams, C. Marcus
2010Physical Review Letters31 citations Open access
Semantic Scholar
Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
Y. Shingaya, A. Zulkefli, T. Iwasaki, R. Hayakawa +4 more
2022Advanced Electronic Materials30 citations Open access
Semantic Scholar
Magnetic field imaging by hBN quantum sensor nanoarray
K. Sasaki, Y. Nakamura, Hao Gu, Moeta Tsukamoto +7 more
2023Applied Physics Letters29 citations Open access
Semantic Scholar
Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process
T. Tezuka, N. Hirashita, Y. Moriyama, S. Nakaharai +2 more
200729 citations
Semantic Scholar
ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory
Bablu Mukherjee, R. Hayakawa, Kenji Watanabe, T. Taniguchi +2 more
2020Advanced Electronic Materials28 citations Open access
Semantic Scholar
Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies
S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai +4 more
200628 citations
Semantic Scholar
Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices.
S. Moriyama, Y. Morita, K. Komatsu, Kosuke Endo +8 more
201926 citations
Semantic Scholar
Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching
T. Tezuka, E. Toyoda, S. Nakaharai, N. Hirashita +7 more
20072007 IEEE International Electron Devices Meeting25 citations
Semantic Scholar
Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications
S. Nakaharai, T. Iijima, S. Ogawa, Shingo Suzuki +3 more
2012International Electron Devices Meeting23 citations
Semantic Scholar
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique
T. Irisawa, T. Numata, N. Hirashita, Y. Moriyama +4 more
200818 citations
Semantic Scholar
Fabry–Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
N. Ahmad, K. Komatsu, T. Iwasaki, Kenji Watanabe +7 more
2019Scientific Reports16 citations Open access
Semantic Scholar
Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon
S. Nakaharai, T. Iijima, S. Ogawa, H. Miyazaki +4 more
201116 citations Open access
Semantic Scholar
Electrostatically Reversible Polarity of Dual-Gated Graphene Transistors
S. Nakaharai, T. Iijima, S. Ogawa, Song-Lin Li +3 more
2014IEEE transactions on nanotechnology15 citations
Semantic Scholar
Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process
N. Hirashita, S. Nakaharai, Y. Moriyama, K. Usuda +3 more
200815 citations
Semantic Scholar
Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing Architecture.
Yoshitaka Shingaya, Takuya Iwasaki, R. Hayakawa, S. Nakaharai +4 more
2024ACS Applied Materials and Interfaces13 citations Open access
Semantic Scholar
Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures
J. Yaita, K. Fukuda, A. Yamada, T. Iwasaki +2 more
2021IEEE Electron Device Letters13 citations
Semantic Scholar
Single-Carrier Transport in Graphene/hBN Superlattices.
T. Iwasaki, S. Nakaharai, Y. Wakayama, Kenji Watanabe +3 more
2020Nano letters (Print)13 citations Open access
Semantic Scholar
Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier
K. Komatsu, S. Kasai, Song-Lin Li, S. Nakaharai +3 more
201412 citations
Semantic Scholar
Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap.
A. Aparecido-Ferreira, H. Miyazaki, Song-Lin Li, K. Komatsu +2 more
2012Nanoscale12 citations
Semantic Scholar
Anomalous behavior of 1/f noise in graphene near the charge neutrality point
S. Takeshita, S. Matsuo, Takahiro Tanaka, S. Nakaharai +5 more
201611 citations Open access
Semantic Scholar
Light‐Assisted and Gate‐Tunable Oxygen Gas Sensor Based on Rhenium Disulfide Field‐Effect Transistors
A. Zulkefli, Bablu Mukherjee, R. Hayakawa, T. Iwasaki +2 more
2020Physica Status Solidi (a)10 citations Open access
Semantic Scholar
Barrier Formation at the Contacts of Vanadium Dioxide and Transition Metal Dichalcogenides.
Mahito Yamamoto, R. Nouchi, T. Kanki, S. Nakaharai +6 more
2019ACS Applied Materials and Interfaces10 citations
Semantic Scholar
Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime
N. Ahmad, T. Iwasaki, K. Komatsu, Kenji Watanabe +7 more
2019Applied Physics Letters8 citations
Semantic Scholar
Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics
K. Tsukagoshi, Song-Lin Li, Hidetoshi Miyazaki, A. Aparecido-Ferreira +1 more
20148 citations Open access
Semantic Scholar
Unipolar transport in bilayer graphene controlled by multiple p-n interfaces
H. Miyazaki, Song-Lin Li, S. Nakaharai, K. Tsukagoshi
20128 citations Open access
Semantic Scholar
The formation of SGOI structures with low dislocation density by a two-step oxidation and condensation method
Naoharu Sugiyama, S. Nakaharai, N. Hirashita, T. Tezuka +3 more
2006International SiGe Technology and Device Meeting8 citations
Semantic Scholar

Frequent co-authors

Invite them to SciRah by sharing their profile.

K. Tsukagoshi×21
Invite
K. Tsukagoshi — researcher profile on SciRah
Song-Lin Li×14
Invite
Song-Lin Li — researcher profile on SciRah
Y. Wakayama×13
Invite
Y. Wakayama — researcher profile on SciRah
T. Tezuka×11
Invite
T. Tezuka — researcher profile on SciRah

×11

Invite

Kenji Watanabe — researcher profile on SciRah

T. Taniguchi×11

Invite

T. Taniguchi — researcher profile on SciRah

N. Hirashita×10

Invite

N. Hirashita — researcher profile on SciRah

Invite

T. Iwasaki — researcher profile on SciRah

Mahito Yamamoto×9

Invite

Mahito Yamamoto — researcher profile on SciRah

Invite

K. Komatsu — researcher profile on SciRah

Invite

Y. Moriyama — researcher profile on SciRah

Invite

K. Ueno — researcher profile on SciRah