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G. Muzioł · SciRah

Researcher profile · Semantic Scholar

G. Muzioł

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G. Muzioł — researcher profile on SciRah

h-index: 16
Works: 119
Citations: 819

Most-cited papers

Photonic devices
C. Skierbiszewski, G. Muzioł, H. Turski, M. Siekacz +18 more
2016Device Research Conference80 citations
Semantic Scholar
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
C. Skierbiszewski, H. Turski, G. Muzioł, M. Siekacz +4 more
201462 citations
Semantic Scholar
Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices
G. Muzioł, H. Turski, M. Siekacz, K. Szkudlarek +6 more
2019ACS Photonics40 citations
Semantic Scholar
True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy
C. Skierbiszewski, G. Muzioł, K. Nowakowski-Szkudlarek, H. Turski +5 more
201834 citations Open access
Semantic Scholar
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
H. Turski, F. Krzyzewski, A. Feduniewicz-Żmuda, P. Wolny +8 more
2019Applications of Surface Science31 citations Open access
Semantic Scholar
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction.
K. Pieniak, M. Chlipała, H. Turski, W. Trzeciakowski +8 more
2020Optics Express29 citations Open access
Semantic Scholar
Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy
G. Muzioł, H. Turski, M. Siekacz, P. Wolny +4 more
201529 citations
Semantic Scholar
Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide
G. Muzioł, H. Turski, M. Siekacz, S. Grzanka +2 more
201626 citations
Semantic Scholar
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
M. Hajdel, M. Chlipała, M. Siekacz, H. Turski +5 more
2021Materials22 citations Open access
Semantic Scholar
Indium incorporation in semipolar (20 2 ̅ 1) and nonpolar (10 1 ̅ 0) InGaN grown by plasma assisted molecular beam epitaxy
M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski +4 more
201721 citations
Semantic Scholar
Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy
R. Kudrawiec, L. Janicki, M. Gładysiewicz, J. Misiewicz +6 more
201320 citations
Semantic Scholar
Optical properties of III-nitride laser diodes with wide InGaN quantum wells
G. Muzioł, M. Hajdel, M. Siekacz, K. Szkudlarek +3 more
2019Applied Physics Express19 citations Open access
Semantic Scholar
MBE fabrication of III-N-based laser diodes and its development to industrial system
C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł +4 more
201319 citations
Semantic Scholar
InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBEa)
C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł +8 more
201219 citations
Semantic Scholar
True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł +9 more
201218 citations Open access
Semantic Scholar
AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł +9 more
201217 citations
Semantic Scholar
Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
C. Chèze, M. Siekacz, G. Muzioł, H. Turski +9 more
201316 citations
Semantic Scholar
Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes
P. Perlin, T. Czyszanowski, L. Marona, S. Grzanka +8 more
2012OPTO16 citations
Semantic Scholar
Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions
M. Siekacz, G. Muzioł, H. Turski, M. Hajdel +8 more
202015 citations Open access
Semantic Scholar
Determination of gain in AlGaN cladding free nitride laser diodes
G. Muzioł, H. Turski, M. Siekacz, M. Sawicka +3 more
201315 citations
Semantic Scholar
Switching of exciton character in double InGaN/GaN quantum wells
T. Suski, G. Staszczak, K. Korona, P. Lefebvre +14 more
2018Physical review B14 citations
Semantic Scholar
HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™
M. Iwinska, M. Amilusik, M. Fijalkowski, T. Sochacki +11 more
201614 citations
Semantic Scholar
High power nitride laser diodes grown by plasma assisted molecular beam epitaxy
G. Muzioł, M. Siekacz, H. Turski, P. Wolny +10 more
201513 citations
Semantic Scholar
Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy
M. Sawicka, G. Muzioł, H. Turski, S. Grzanka +8 more
201313 citations Open access
Semantic Scholar
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications
G. Cywiński, Krzesimir Szkudlarek, P. Kruszewski, Ivan Yahniuk +6 more
201612 citations
Semantic Scholar
Cyan laser diode grown by plasma-assisted molecular beam epitaxy
H. Turski, G. Muzioł, P. Wolny, S. Grzanka +4 more
201412 citations
Semantic Scholar
Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection
Natalia Fiuczek, M. Sawicka, A. Feduniewicz-Żmuda, M. Siekacz +6 more
2022Acta Materialia11 citations
Semantic Scholar
Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy.
G. Muzioł, M. Hajdel, H. Turski, K. Nomoto +7 more
2020Optics Express11 citations Open access
Semantic Scholar
Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes
G. Cywiński, K. Szkudlarek, P. Kruszewski, I. Yahniuk +5 more
201611 citations
Semantic Scholar
Nanostars in Highly Si-Doped GaN
M. Sawicka, H. Turski, K. Sobczak, A. Feduniewicz-Żmuda +7 more
2023Crystal Growth & Design10 citations Open access
Semantic Scholar
Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy
G. Muzioł, M. Siekacz, K. Nowakowski-Szkudlarek, M. Hajdel +8 more
2019Materials Science in Semiconductor Processing10 citations
Semantic Scholar
Influence of the growth method on degradation of InGaN laser diodes
Agata Bojarska, G. Muzioł, C. Skierbiszewski, E. Grzanka +5 more
201710 citations Open access
Semantic Scholar
Waveguide Design for Long Wavelength InGaN Based Laser Diodes
G. Muzioł, H. Turski, M. Siekacz, M. Sawicka +5 more
2012Acta Physica Polonica. A10 citations Open access
Semantic Scholar
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes.
Julia Sławińska, G. Muzioł, M. Siekacz, H. Turski +5 more
2022Optics Express9 citations Open access
Semantic Scholar
Tunnel Junctions with a Doped ( In,Ga)N Quantum Well for Vertical Integration of III -Nitride Optoelectronic Devices
M. Żak, G. Muzioł, H. Turski, M. Siekacz +5 more
20219 citations
Semantic Scholar
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.
M. Sawicka, Natalia Fiuczek, H. Turski, G. Muzioł +5 more
2020Nanoscale9 citations
Semantic Scholar
Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE
H. Turski, G. Muzioł, M. Siekacz, P. Wolny +4 more
20189 citations
Semantic Scholar
Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates
M. Sawicka, C. Chèze, H. Turski, G. Muzioł +11 more
20139 citations
Semantic Scholar
Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality
A. Ahmad, P. Strąk, P. Kempisty, K. Sakowski +9 more
2021Journal of Applied Physics8 citations Open access
Semantic Scholar
Fabrication of GaN-air channels for embedded photonic structures
M. Sawicka, Oliwia Gołyga, Natalia Fiuczek, G. Muzioł +8 more
2023Materials Science in Semiconductor Processing7 citations Open access
Semantic Scholar
Transition between quantum confinement and bulklike behavior in polar quantum wells
Lukas Uhlig, Jannina Tepaß, M. Hajdel, G. Muzioł +1 more
2023Physical review B7 citations Open access
Semantic Scholar
InGaN blue light emitting micro-diodes with current path defined by tunnel junction.
K. Gibasiewicz, Agata Bojarska-Cieślińska, G. Muzioł, C. Skierbiszewski +5 more
2020Optics Letters7 citations
Semantic Scholar
Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient
Ł. Janicki, Manolo Ramírez-López, J. Misiewicz, G. Cywiński +6 more
20167 citations Open access
Semantic Scholar
Theoretical and Experimental Studies on Material Gain for Wide Polar InGaN Quantum Well‐Mechanism Leading to Electric Field Screening and Lasing
M. Gładysiewicz, R. Kudrawiec, G. Muzioł, H. Turski +1 more
2023Advanced Physics Research6 citations Open access
Semantic Scholar
Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells
J. Tomm, A. Bercha, G. Muzioł, J. Piprek +1 more
2023Physica Status Solidi (a)6 citations Open access
Semantic Scholar
Bidirectional light-emitting diode as a visible light source driven by alternating current
M. Żak, G. Muzioł, M. Siekacz, A. Bercha +7 more
2023Nature Communications6 citations Open access
Semantic Scholar
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
H. Turski, P. Wolny, M. Chlipała, M. Sawicka +6 more
2022Materials6 citations Open access
Semantic Scholar
Evolution of dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LD
K. Pieniak, W. Trzeciakowski, G. Muzioł, A. Kafar +3 more
2021Optics Express6 citations Open access
Semantic Scholar
Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes
M. Hajdel, G. Muzioł, K. Nowakowski-Szkudlarek, M. Siekacz +2 more
20206 citations Open access
Semantic Scholar
Nitride LEDs and Lasers with Buried Tunnel Junctions
H. Turski, M. Siekacz, G. Muzioł, M. Hajdel +7 more
20196 citations Open access
Semantic Scholar

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