Cathy Lee

Most-cited papers

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
U. Chowdhury, Jose L. Jimenez, Cathy Lee, Edward Beam +8 more
2008IEEE Electron Device Letters168 citations
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Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices.
Luke Yates, Jonathan Anderson, X. Gu, Cathy Lee +7 more
2018ACS Applied Materials and Interfaces153 citations Open access
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Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.
Yan Zhou, Julian Anaya, J. Pomeroy, Huarui Sun +7 more
2017ACS Applied Materials and Interfaces140 citations
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A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
C. Campbell, Cathy Lee, Victoria Williams, M. Kao +3 more
2009IEEE Journal of Solid-State Circuits122 citations
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Physical degradation of GaN HEMT devices under high drain bias reliability testing
S. Park, C. Floresca, U. Chowdhury, J. Jimenez +5 more
2009Microelectronics and reliability105 citations
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Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs
Jin Chen, Y. Puzyrev, R. Jiang, En Zhang +8 more
2015IEEE Transactions on Nuclear Science89 citations
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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
A. Green, J. Gillespie, R. Fitch, D. Walker +11 more
2019IEEE Electron Device Letters76 citations Open access
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Effects of AlGaN/GaN HEMT structure on RF reliability
Cathy Lee, L. Witkowski, H. Tserng, P. Saunier +5 more
200576 citations
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AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz
D. Dumka, Cathy Lee, H. Tserng, P. Saunier +1 more
200472 citations
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A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
C. Campbell, Cathy Lee, Victoria Williams, M. Kao +2 more
20082008 IEEE Compound Semiconductor Integrated Circuits Symposium62 citations
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AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz
Cathy Lee, P. Saunier, Jin-Wei Yang, M. A. Khan
2003IEEE Electron Device Letters49 citations
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Wideband power amplifier MMICs utilizing GaN on SiC
E. Reese, D. Allen, Cathy Lee, Tuong Nguyen
20102010 IEEE MTT-S International Microwave Symposium48 citations
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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
A. Green, N. Moser, N. Miller, K. Liddy +13 more
2020IEEE Electron Device Letters40 citations Open access
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Progress in GaN Performances and Reliability
P. Saunier, Cathy Lee, A. Balistreri, D. Dumka +11 more
20072007 65th Annual Device Research Conference38 citations
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Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications
S. Sohel, A. Xie, E. Beam, H. Xue +6 more
2019IEEE Electron Device Letters37 citations
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AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications
M. Kao, Cathy Lee, R. Hajji, Paul Saunier +1 more
20072007 IEEE/MTT-S International Microwave Symposium31 citations
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State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs
Cathy Lee, H. Wang, J.-W. Yang, L. Witkowski +3 more
200230 citations
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An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity
P. Dang, G. Khalsa, Celesta S. Chang, D. Katzer +12 more
2021Science Advances28 citations Open access
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Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates
Cathy Lee, H. Tserng, L. Witkowski, P. Saunier +4 more
200428 citations
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Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide
Junao Cheng, Mohammad Wahidur Rahman, A. Xie, H. Xue +8 more
2021IEEE Transactions on Electron Devices27 citations
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High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs
Jin Chen, Y. Puzyrev, En Zhang, D. Fleetwood +9 more
2016IEEE transactions on device and materials reliability24 citations Open access
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RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz
D. Dumka, Cathy Lee, H. Tserng, P. Saunier
200420 citations
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Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs
A. Sasikumar, Z. Zhang, P. Kumar, En Zhang +6 more
2015IEEE International Reliability Physics Symposium8 citations
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Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications
Yongjie Cui, Hung-Yu Chen, Shuo-Qi Chen, Doug Linkhart +17 more
2021International Electron Devices Meeting7 citations
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Monolithic Integration of Self-Biased ${C}$ -Band Circulator on SiC Substrate for GaN MMIC Applications
Yongjie Cui, Yuepeng Zhang, L. Witkowski, S. Yoon +10 more
2019IEEE Electron Device Letters7 citations
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Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application
Yongjie Cui, Yu Cao, M. Pilla, E. Beam +8 more
2019Device Research Conference6 citations
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Tu4E-4 Multi-channel Schottky-gate BRIDGE HEMT Technology for Millimeter-Wave Power Amplifier Applications
K. Shinohara, C. King, D. Regan, E. Regan +9 more
2022Intelligent Memory Systems5 citations
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SiC Substrate Via Etch Process Optimization
J. Ruan, S. Roadman, Cathy Lee, C. Sellers +1 more
20095 citations
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High-temperature power performance of X-band recessed-gate AlGaN/GaN HEMTs
Cathy Lee, Paul Saunier, H. Tserng
2005IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.4 citations
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Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs
B. Downey, S. Mack, A. Xie, D. Katzer +10 more
2023IEEE Transactions on Electron Devices3 citations
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Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design
B. Downey, A. Xie, S. Mack, D. Katzer +10 more
2020Device Research Conference3 citations
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Analytical HFET <formula formulatype="inline"><tex>$I$</tex></formula>– <formula formulatype="inline"><tex>$V$</tex></formula> Model in Presence of Current Collapse
Alexei Koudymov, M. Shur, G. Simin, K. Chu +4 more
2008IEEE Transactions on Electron Devices2 citations
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High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K- and Ka-Band Applications
M. Kao, Cathy Lee, P. Saunier, H. Tserng +1 more
20071 citations
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DC加速寿命試験下でのAlGaN/GaN HEMTの捕獲効果の研究【Powered by NICT】
Wensheng Sun, Cathy Lee, Paul Saunier, S. Ringel +1 more
20160 citations
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Physical degradation of GaN HEMT device observed in TEM during reliability test
S. Park, Carlo Floresca, Moon J. Kim, U. Chowdhury +5 more
20082008 ROCS Workshop [Reliability of Compound Semiconductors Workshop]0 citations
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forHPA andMulti-Function MMIC Applications
M. Kao, Cathy Lee, R. Hajji
20070 citations
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