M. Chang

Influence of photoperturbation on the characterization accuracy of scanning capacitance microscopy [MOSFET example]

M. Chang, C.-Y. Chen, Wen-Bin Wan, J.-H. Liang

2004Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743)1 citations

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M. Chang

Most-cited papers

Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects

Photovoltaic effect on differential capacitance profiles of low-energy-BF2+-implanted silicon wafers

A new insight into BEOL TDDB lifetime model for advanced technology scaling

The influence of the annealing sequence on p+/n junctions observed by scanning capacitance microscopy

32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor deposition

Nanomanipulation measurement and PIC simulation of field-emission properties from a single crystallized silicon nano-emitter

Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates

A comprehensive breakdown model describing temperature dependent activation energy of low-к/extreme low-к dielectric TDDB

An efficient approach to quantify the impact of Cu residue on ELK TDDB

A Novel Constant E-Field Methodology for Intrinsic TDDB Lifetime Projection

A fundamental AC TDDB study of BEOL ELK in advanced technology

Influence of annealing sequence on p+/n junction images studied by scanning capacitance microscopy

Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures

Influence of photoperturbation on the characterization accuracy of scanning capacitance microscopy [MOSFET example]

An investigation of capacitance aging model for extreme low-k and high-k dielectrics

The Electrical conduction of ultra Thin sioz on Slightly rron-contaminfiedp + ype Si Wafers

Measurement of field-emission properties of a single crystal silicon emitter using scanning electron microscopy

SCANNING PROBE ANALYSIS OF DEFECTS INDUCED BY SLIGHT IRON CONTAMINATION ON THERMALLY OXIDIZED p-TYPE SILICON WAFERS