P. Waltereit

Most-cited papers

Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
C. Manz, S. Leone, L. Kirste, Jana Ligl +10 more
202175 citations Open access
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Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
K. Frei, R. Trejo-Hernández, S. Schütt, L. Kirste +6 more
2019Japanese Journal of Applied Physics75 citations
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The Sky's the Limit: Key Technology and Market Trends in Satellite Communications
R. Emrick, P. Cruz, N. Carvalho, S. Gao +2 more
2014IEEE Microwave Magazine50 citations
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AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz
S. Krause, I. Streicher, P. Waltereit, L. Kirste +2 more
2023IEEE Electron Device Letters49 citations Open access
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Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition
I. Streicher, S. Leone, L. Kirste, C. Manz +6 more
2022Physica Status Solidi (a)46 citations Open access
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Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test
M. Caesar, M. Dammann, V. Polyakov, P. Waltereit +5 more
2012IEEE International Reliability Physics Symposium45 citations
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Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology
R. Reiner, P. Waltereit, B. Weiss, S. Moench +4 more
201743 citations
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Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
I. Streicher, S. Leone, C. Manz, L. Kirste +5 more
2023Crystal Growth & Design39 citations
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Building Blocks for GaN Power Integration
M. Basler, R. Reiner, S. Moench, F. Benkhelifa +4 more
2021IEEE Access38 citations Open access
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GaN‐based high voltage transistors for efficient power switching
P. Waltereit, R. Reiner, H. Czap, D. Peschel +4 more
201338 citations
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PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors
S. Moench, R. Reiner, P. Waltereit, F. Benkhelifa +9 more
2021IEEE transactions on power electronics37 citations Open access
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Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip
B. Weiss, R. Reiner, V. Polyakov, P. Waltereit +3 more
2017IEEE Workshop on Wide Bandgap Power Devices and Applications37 citations
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Integrated reverse-diodes for GaN-HEMT structures
R. Reiner, P. Waltereit, B. Weiss, M. Wespel +4 more
2015International Symposium on Power Semiconductor Devices and IC's33 citations
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GaN HEMTs and MMICs for space applications
P. Waltereit, Wolfgang Bronner, R. Quay, M. Dammann +11 more
201332 citations
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Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage
M. Basler, R. Reiner, S. Moench, P. Waltereit +3 more
2020IEEE Electron Device Letters30 citations
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Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
S. Moench, M. Costa, Alexander Barner, I. Kallfass +5 more
2015IEEE Workshop on Wide Bandgap Power Devices and Applications27 citations
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Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs
M. Mocanu, Christian Unger, M. Pfost, P. Waltereit +1 more
2017IEEE Transactions on Electron Devices26 citations
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Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip
B. Weiss, R. Reiner, P. Waltereit, R. Quay +3 more
2016IEEE Workshop on Wide Bandgap Power Devices and Applications25 citations
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Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Thomas Gerrer, V. Cimalla, P. Waltereit, S. Müller +5 more
2017European Microwave Integrated Circuits Conference21 citations Open access
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Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
S. Moench, R. Reiner, B. Weiss, P. Waltereit +3 more
2017IEEE Workshop on Wide Bandgap Power Devices and Applications20 citations
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A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts
M. Basler, S. Moench, R. Reiner, P. Waltereit +3 more
2020International Symposium on Power Semiconductor Devices and IC's19 citations
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Linear temperature sensors in high-voltage GaN-HEMT power devices
R. Reiner, P. Waltereit, B. Weiss, M. Wespel +4 more
2016Applied Power Electronics Conference19 citations
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Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs
P. Döring, R. Driad, R. Reiner, P. Waltereit +3 more
2021IEEE Transactions on Electron Devices18 citations Open access
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Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer
S. Moench, S. Müller, R. Reiner, P. Waltereit +7 more
2020Physica Status Solidi (a)18 citations Open access
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Compact GaN Power ICs with Power HEMT, Gate Driver, Temperature Sensor, Current Sense-FET and Amplifier
M. Basler, R. Reiner, S. Moench, P. Waltereit +2 more
2023International Symposium on Power Semiconductor Devices and IC's17 citations
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Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications
R. Reiner, P. Waltereit, F. Benkhelifa, S. Müller +5 more
20132013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)17 citations
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Integrated Current Sensing in GaN Power ICs
S. Moench, R. Reiner, P. Waltereit, R. Quay +2 more
2019International Symposium on Power Semiconductor Devices and IC's15 citations
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Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC
B. Weiss, R. Reiner, P. Waltereit, R. Quay +1 more
2017IEEE Workshop on Wide Bandgap Power Devices and Applications15 citations
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Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs
M. Wespel, V. Polyakov, M. Dammann, R. Reiner +4 more
2016IEEE Transactions on Electron Devices15 citations
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Integration of GaN HEMTs onto Silicon CMOS by micro Transfer Printing
R. Lerner, S. Eisenbrandt, C. Bower, S. Bonafede +3 more
2016International Symposium on Power Semiconductor Devices and IC's14 citations
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Enhancing Electrocaloric Heat Pump Performance by over 99% Efficient Power Converters and Offset Fields
S. Moench, R. Reiner, P. Waltereit, C. Molin +4 more
2022IEEE Access13 citations Open access
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A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors
S. Moench, R. Reiner, P. Waltereit, S. Müller +3 more
2020International Symposium on Power Semiconductor Devices and IC's13 citations
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Investigation of GaN-HEMTs in Reverse Conduction
R. Reiner, P. Waltereit, B. Weiss, R. Quay +1 more
201713 citations
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Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
S. Moench, I. Kallfass, R. Reiner, B. Weiss +3 more
2016IEEE Workshop on Wide Bandgap Power Devices and Applications13 citations
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Assembly and packaging technologies for high-temperature and high-power GaN HEMTs
A. Bajwa, Y. Qin, Jürgen Wilde, R. Reiner +2 more
2014Electronic Components and Technology Conference13 citations
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Monolithic GaN-on-Si Half-Bridge Circuit with Integrated Freewheeling Diodes
R. Reiner, P. Waltereit, B. Weiss, M. Wespel +3 more
201612 citations
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How highly efficient power electronics transfers high electrocaloric material performance to heat pump systems
S. Mönch, R. Reiner, P. Waltereit, M. Basler +6 more
2023MRS Advances11 citations Open access
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A 600V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices
S. Moench, R. Reiner, P. Waltereit, Jan Hueckelheim +4 more
202011 citations
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Asymmetrical Substrate-Biasing Effects at up to 350V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges
S. Moench, R. Reiner, P. Waltereit, D. Meder +4 more
2019IEEE Workshop on Wide Bandgap Power Devices and Applications11 citations
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Modeling of the Impact of the Substrate Voltage on the Capacitances of GaN-on-Si HEMTs
S. Albahrani, Dhawal Mahajan, S. Moench, R. Reiner +3 more
2019IEEE Transactions on Electron Devices11 citations
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PCB-Embedding for GaN-on-Si Power Devices and ICs
R. Reiner, B. Weiss, D. Meder, P. Waltereit +4 more
201811 citations
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High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs
M. Wespel, M. Dammann, V. Polyakov, R. Reiner +5 more
2015IEEE International Reliability Physics Symposium11 citations
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A 99.74% Efficient Capacitor-Charging Converter Using Partial Power Processing for Electrocalorics
S. Mönch, R. Reiner, Kareem Mansour, P. Waltereit +7 more
2023IEEE Journal of Emerging and Selected Topics in Power Electronics10 citations Open access
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Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures
P. Doering, R. Driad, S. Leone, Stefan Mueller +5 more
2020Physica Status Solidi (a)10 citations Open access
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Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si‐CMOS by Micro‐Transfer‐Printing
R. Lerner, S. Eisenbrandt, F. Fischer, A. Fecioru +6 more
201810 citations
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On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
P. Döring, Matthias Sinnwell, R. Reiner, R. Driad +5 more
2022Journal of Applied Physics9 citations Open access
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A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses
M. Basler, S. Moench, R. Reiner, P. Waltereit +3 more
2019IEEE Workshop on Wide Bandgap Power Devices and Applications9 citations
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Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers
Thomas Gerrer, A. Graff, M. Simon-Najasek, H. Czap +7 more
2019Applied Physics Letters9 citations
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Multi-Stage Cascode in High-Voltage A1GaN/GaN-on-Si Technology
R. Reiner, P. Waltereit, S. Moench, M. Dammann +3 more
2018IEEE Workshop on Wide Bandgap Power Devices and Applications9 citations
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Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications
B. Weiss, R. Reiner, P. Waltereit, S. Müller +3 more
20152015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)9 citations
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