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She-Yang Ning · SciRah

Researcher profile · Semantic Scholar

She-Yang Ning

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She-Yang Ning — researcher profile on SciRah

h-index: 8
Works: 45
Citations: 167

Most-cited papers

Advanced Bit Flip Concatenates BCH Code Demonstrates 0.93% Correctable BER and Faster Decoding on (36 864, 32 768) Emerging Memories
She-Yang Ning
2018IEEE Transactions on Circuits and Systems Part 1: Regular Papers14 citations
Semantic Scholar
Investigation and Improvement of Verify-Program in Carbon Nanotube-Based Nonvolatile Memory
She-Yang Ning, T. Iwasaki, K. Shimomura, K. Johguchi +6 more
2015IEEE Transactions on Electron Devices14 citations
Semantic Scholar
Write stress reduction in 50nm AlxOy ReRAM improves endurance 1.4× and write time, energy by 17%
She-Yang Ning, T. Iwasaki, K. Takeuchi
20132013 5th IEEE International Memory Workshop13 citations
Semantic Scholar
23% faster program and 40% energy reduction of carbon nanotube non-volatile memory with over 1011 endurance
She-Yang Ning, T. Iwasaki, K. Shimomura, K. Johguchi +5 more
2014Symposium on VLSI Technology12 citations
Semantic Scholar
19.6 Hybrid storage of ReRAM/TLC NAND Flash with RAID-5/6 for cloud data centers
Shuhei Tanakamaru, Hiroki Yamazawa, Tsukasa Tokutomi, She-Yang Ning +1 more
2014IEEE International Solid-State Circuits Conference12 citations
Semantic Scholar
Machine Learning Prediction for 13X Endurance Enhancement in ReRAM SSD System
T. Iwasaki, She-Yang Ning, Hiroki Yamazawa, Chao Sun +2 more
2015International Memory Workshop11 citations
Semantic Scholar
Stability conditioning to enhance read stability 10x in 50nm AlxOy ReRAM
T. Iwasaki, She-Yang Ning, K. Takeuchi
20132013 5th IEEE International Memory Workshop11 citations
Semantic Scholar
Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory
K. Miyaji, Yuki Yanagihara, R. Hirasawa, She-Yang Ning +1 more
201410 citations Open access
Semantic Scholar
Adaptive Comparator Bias-Current Control of 0.6 V Input Boost Converter for ReRAM Program Voltages in Low Power Embedded Applications
T. Ishii, She-Yang Ning, Masahiro Tanaka, Kota Tsurumi +1 more
2016IEEE Journal of Solid-State Circuits8 citations
Semantic Scholar
Hybrid Storage of ReRAM/TLC NAND Flash with RAID-5/6 for Cloud Data Centers
Yamazawa Hiroki, Tokutomi Tsukasa, Tanakamaru Shuhei, She-Yang Ning +1 more
20148 citations
Semantic Scholar
50 nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset
She-Yang Ning, T. Iwasaki, K. Takeuchi
20157 citations
Semantic Scholar
50 nm AlxOy resistive random access memory array program bit error reduction and high temperature operation
She-Yang Ning, T. Iwasaki, K. Takeuchi
20147 citations
Semantic Scholar
Improving Resistive RAM Hard and Soft Decision Correctable BERs by Using Improved-LLR and Reset-Check-Reverse-Flag Concatenating LDPC Code
She-Yang Ning
2020IEEE Transactions on Circuits and Systems - II - Express Briefs5 citations
Semantic Scholar
Design Methodology for Highly Reliable, High Performance ReRAM and 3-Bit/Cell MLC NAND Flash Solid-State Storage
Shuhei Tanakamaru, Hiroki Yamazawa, Tsukasa Tokutomi, She-Yang Ning +1 more
2015IEEE Transactions on Circuits and Systems Part 1: Regular Papers5 citations
Semantic Scholar
Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory
She-Yang Ning, T. Iwasaki, Shuhei Tanakamaru, Darlene Viviani +4 more
2016IEEE Journal of Solid-State Circuits4 citations
Semantic Scholar
Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses
She-Yang Ning, T. Iwasaki, Shogo Hachiya, G. Rosendale +4 more
20164 citations
Semantic Scholar
Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation
Masafumi Doi, Tsukasa Tokutomi, Shogo Hachiya, A. Kobayashi +4 more
20163 citations
Semantic Scholar
0.6 V operation, 26% smaller voltage ripple, 9% energy efficient boost converter with adaptively optimized comparator bias-current for ReRAM program in low power IoT embedded applications
T. Ishii, Shogo Hachiya, She-Yang Ning, Masahiro Tanaka +1 more
2015International Symposium on Security in Computing and Communications3 citations
Semantic Scholar
0.6–1.0 V operation set/reset voltage (3 V) generator for three-dimensional integrated resistive random access memory and NAND flash hybrid solid-state drive
Masahiro Tanaka, Shogo Hachiya, T. Ishii, She-Yang Ning +2 more
20162 citations
Semantic Scholar
Variation of SCM/NAND Flash Hybrid SSD Performance, Reliability and Cost by Using Different SSD Configurations and Error Correction Strengths
Hirofumi Takishita, Shuhei Tanakamaru, She-Yang Ning, K. Takeuchi
2016IEICE transactions on electronics2 citations
Semantic Scholar
Comprehensive comparison of 3D-TSV integrated solid-state drives (SSDs) with storage class memory and NAND flash memory
Shogo Hachiya, Takahiro Onagi, She-Yang Ning, K. Takeuchi
2015IEEE International Conference on 3D System Integration2 citations
Semantic Scholar
A 1.0 V Operation, 65% Faster Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND Flash Hybrid Solid-State Drive
M. Tanaka, Shogo Hachiya, T. Ishii, She-Yang Ning +1 more
20152 citations
Semantic Scholar
50 nm AlxOy ReRAM array retention characteristics before and after endurance
Hiroki Yamazawa, She-Yang Ning, T. Iwasaki, Shuhei Tanakamaru +2 more
2014IEEE Silicon Nanoelectronics Workshop2 citations
Semantic Scholar
Forward and Reverse Biasing in Resistive Memories for Fast, Disturb-Free Read, and Verify
T. Iwasaki, She-Yang Ning, K. Takeuchi
20132 citations Open access
Semantic Scholar
Investigation of Carbon Nanotube Memory Cell Array Program Characteristics
She-Yang Ning, T. Iwasaki, Eisuke Yanagizawa, Shogo Hachiya +5 more
20151 citations
Semantic Scholar
Trade-off of performance, reliability and cost of SCM/NAND flash hybrid SSD
Hirofumi Takishita, She-Yang Ning, K. Takeuchi
2015IEEE Silicon Nanoelectronics Workshop1 citations
Semantic Scholar
Mb-Class Array Level Investigation of Program Verify Methods for AL x O y ReRAM
She-Yang Ning, T. Iwasaki, K. Takeuchi
20131 citations
Semantic Scholar
Bipolar Read in ReRAM for 3x Write Speed and 5x Faster Read with Disturb Immunity
T. Iwasaki, She-Yang Ning, K. Takeuchi
20121 citations
Semantic Scholar
Demonstration and Understanding of Nano-RAM Novel One-Time Programmable Memory Application
She-Yang Ning, Jia-Wei Luo
2019IEEE Transactions on Electron Devices0 citations
Semantic Scholar
Evaluation of endurance depending on programming voltage for non-volatile memory device using carbon nanotubes
T. Inose, T. Iwasaki, She-Yang Ning, Darlene Viviani +4 more
20170 citations
Semantic Scholar
50%ビット誤り率を用いたNRAMのリセットチェック逆止方式または35%パリティオーバヘッドと読み出し性能ストレージクラスメモリのための16%復号化待ち時間低減【Powered by NICT】
She-Yang Ning, Iwasaki Tomoko Ogura, Tanakamaru Shuhei, Viviani Darlene +4 more
20160 citations
Semantic Scholar
Reliability study of Carbon Nanotube memory after various cycling conditions
T. Inose, T. Iwasaki, She-Yang Ning, Darlene Viviani +4 more
2016IEEE Silicon Nanoelectronics Workshop0 citations
Semantic Scholar
A 0.6V Operation ReRAM Program Voltage Generator with Adaptively Optimized Comparator Bias-Current for Batteryless IoT Local Device
Masahiro Tanaka, T. Ishii, Hachiya Shogo, She-Yang Ning +1 more
20160 citations
Semantic Scholar
ReRAM reliability characterization and improvement by machine learning
OguraIwasaki Tomoko, She-Yang Ning, Yamazawa Hiroki, Chao Sun +2 more
20160 citations
Semantic Scholar
高信頼性,高性能ReRAM及び3ビット/セルMLC NANDフラッシュ固体記録
Tanakamaru Shuhei, Yamazawa Hiroki, Tokutomi Tsukasa, She-Yang Ning +1 more
20150 citations
Semantic Scholar
Reliability evaluation of the non-volatile memory device using carbon nanotubes
T. Inose, OguraIwasaki Tomoko, She-Yang Ning, K. Takeuchi
20150 citations
Semantic Scholar
Array-level stability enhancement of 50 nm AlxOy ReRAM
T. Iwasaki, She-Yang Ning, Hiroki Yamazawa, K. Takeuchi
20150 citations
Semantic Scholar
Reliability evaluation of Carbon Nanotube (CNT) based non-volatile memory
Yanagizawa Eisuke, She-Yang Ning, K. Takeuchi
20140 citations
Semantic Scholar
Program and erase characteristic variation of Carbon Nanotube(CNT) based non-volatile memory
K. Shimomura, She-Yang Ning, K. Takeuchi
20140 citations
Semantic Scholar
Investigation of AlxOy ReRAM Cell Resistance Switch Characteristic
She-Yang Ning
20140 citations
Semantic Scholar
50 nm Al
She-Yang Ning, T. Iwasaki, K. Takeuchi
20140 citations
Semantic Scholar
Evaluation of ReRAM write characteristics
Shinji Nishikawa, She-Yang Ning, K. Takeuchi
20140 citations
Semantic Scholar
Forward and Reverse Biasing in Resistive Memories for Fast, Disturb-Free Read, and Verify (Special Issue : Solid State Devices and Materials)
T. Iwasaki, She-Yang Ning, K. Takeuchi
20130 citations
Semantic Scholar
3x Write and 5x Read Speed Increase for RRAM with Disturb Free Bipolar Operation
She-Yang Ning, T. Iwasaki, K. Takeuchi
20120 citations
Semantic Scholar
3x Write and 5x Read Speed Increase for RRAM with Disturb Free Bipolar Operation
She-Yang Ning, OguraIwasaki Tomoko, K. Takeuchi
20120 citations
Semantic Scholar

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Shuhei Tanakamaru×7

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