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Ko Nakamura · SciRah

Researcher profile · Semantic Scholar

Ko Nakamura

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Ko Nakamura — researcher profile on SciRah

h-index: 6
Works: 31
Citations: 267

Most-cited papers

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.
K. Toprasertpong, K. Tahara, Y. Hikosaka, Ko Nakamura +3 more
2022ACS Applied Materials and Interfaces153 citations
Semantic Scholar
Development of highly reliable ferroelectric random access memory and its Internet of Things applications
T. Eshita, Wen-Sheng Wang, K. Nomura, Ko Nakamura +6 more
2018Japanese Journal of Applied Physics29 citations Open access
Semantic Scholar
Reconditioning-Free Polishing for Interlayer-Dielectric Planarization
Ko Nakamura, Sadahiro Kishii, Y. Arimoto
199722 citations
Semantic Scholar
Development of ferroelectric RAM (FRAM) for mass production
Takashi Eshita, Wen-Sheng Wang, Ko Nakamura, S. Mihara +6 more
2014International Conference on Electronic Packaging Technology14 citations
Semantic Scholar
Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor
Wen-Sheng Wang, K. Nomura, Ko Nakamura, T. Eshita +9 more
2018Japanese Journal of Applied Physics7 citations
Semantic Scholar
Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM
Wen-Sheng Wang, Ko Nakamura, T. Eshita, K. Nomura +6 more
2022Applied Physics Letters6 citations
Semantic Scholar
Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor
K. Nomura, Wen-Sheng Wang, Hideshi Yamaguchi, Ko Nakamura +8 more
2018Japanese Journal of Applied Physics6 citations Open access
Semantic Scholar
Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory
Wen-Sheng Wang, K. Nomura, Hideshi Yamaguchi, Ko Nakamura +7 more
20176 citations Open access
Semantic Scholar
Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions
K. Nomura, Wen-Sheng Wang, Ko Nakamura, T. Eshita +8 more
2019Journal of Applied Physics5 citations
Semantic Scholar
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance
H. Saito, T. Sugimachi, Ko Nakamura, S. Ozawa +13 more
2015International Memory Workshop5 citations
Semantic Scholar
Fully functional 0.5-/spl mu/m 64-kbit embedded SBT FeRAM using a new low temperature SBT deposition technique
Takashi Eshita, Ko Nakamura, M. Mushiga, A. Itho +5 more
19991999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)5 citations
Semantic Scholar
An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O3 capacitor
Wen-Sheng Wang, T. Eshita, K. Takai, K. Nomura +9 more
2022Japanese Journal of Applied Physics4 citations
Semantic Scholar
A new electrode structure of IrOx/Bi-doped SrRuO3 for highly reliable La-doped Pb (Zr, Ti)O3-based ferroelectric memories
Wen-Sheng Wang, K. Takai, Ko Nakamura, M. Oikawa +9 more
20232023 22nd International Symposium INFOTEH-JAHORINA (INFOTEH)2 citations
Semantic Scholar
Erratum: “Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM” [Appl. Phys. Lett. 120, 102901 (2022)]
Wen-Sheng Wang, Ko Nakamura, T. Eshita, K. Nomura +6 more
2025Applied Physics Letters1 citations
Semantic Scholar
A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM
Wen-Sheng Wang, Ko Nakamura, Masaaki Nakabayashi, T. Eshita +9 more
2024Applied Physics Letters1 citations
Semantic Scholar
Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories
Nozomi Sato, Wen-Sheng Wang, T. Eshita, M. Oikawa +7 more
2024Japanese Journal of Applied Physics1 citations
Semantic Scholar
Mn2O3 Slurry Reuse by Circulation Achieving High Constant Removal Rate
S. Kishii, Ko Nakamura, K. Hanawa, S. Watanabe +3 more
20121 citations Open access
Semantic Scholar
Dielectric SiO2 Planarization Using MnO2 Slurry
S. Kishii, Ko Nakamura, K. Hanawa, S. Watanabe +3 more
20111 citations Open access
Semantic Scholar
Development of a ferroelectric capacitor with double-layered PbLa(Zr,Ti)O 3 thin films aiming to lowering operation voltage and leakage current of FRAM
Wen-Sheng Wang, Ko Nakamura, K. Takai, K. Nomura +9 more
20190 citations
Semantic Scholar
Dependence of {111}-textured PbLa(Zr,Ti)O 3 thin films on Pt electrode using AlO x , TiO x , or PtO x buffer layer
Wen-Sheng Wang, K. Nomura, Ko Nakamura, T. Eshita +9 more
20180 citations
Semantic Scholar
Crystallization mechanism of ferroelectric PLZT during the post deposition annealing
K. Nomura, Wen-Sheng Wang, Hideshi Yamaguchi, Ko Nakamura +7 more
20170 citations
Semantic Scholar
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1E17-Cycle Endurance
H. Saito, Ko Nakamura, S. Ozawa, Sashida Naoya +11 more
20160 citations
Semantic Scholar
Mn₂O₃ Slurry Reuse by Circulation Achieving High Constant Removal Rate (Special Issue : Solid State Devices and Materials (2))
S. Kishii, Ko Nakamura, K. Hanawa, S. Watanabe +3 more
20120 citations
Semantic Scholar
Mn2O3 Slurry Achieving Reduction of Slurry Waste
S. Kishii, Ko Nakamura, K. Hanawa, S. Watanabe +3 more
20120 citations Open access
Semantic Scholar
Dielectric SiO2Planarization Using MnO2Slurry
S. Kishii, Ko Nakamura, K. Hanawa, S. Watanabe +3 more
20120 citations
Semantic Scholar
Dielectric SiO₂ Planarization Using MnO₂ Slurry
S. Kishii, Ko Nakamura, K. Hanawa, S. Watanabe +3 more
20120 citations
Semantic Scholar
A method for heat treating a silicon semiconductor substrate and treated by this method Silizumhalbleitersubstrat
S. Maeda, Ko Nakamura, S. Sadohara, T. Sugiman +1 more
20050 citations
Semantic Scholar
Dispositif semiconducteur et son procédé de fabrication
Ko Nakamura, K. Takai
20040 citations
Semantic Scholar
Evaluation of SrBi2(TaxNb1-x)2O9(SBTN) Crystallization Technique at 650℃
Ko Nakamura, H. Yamawaki, S. Otani
20000 citations
Semantic Scholar
Reconditioning-Free Polish for Inter-Layer-Dielectric Planarization
Ko Nakamura, S. Kishii, Y. Arimoto
19960 citations
Semantic Scholar
Wide feature dielectric planarization using MnO/sub 2/ slurry
Sadahiro Kishii, Ko Nakamura, Yoshiko Okui, Rintaro Suzuki +1 more
19961996 Symposium on VLSI Technology. Digest of Technical Papers0 citations
Semantic Scholar

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Y. Hikosaka×17
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Y. Hikosaka — researcher profile on SciRah
Wen-Sheng Wang×17
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S. Mihara×17
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K. Takai×16
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T. Eshita — researcher profile on SciRah

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Hideshi Yamaguchi×13

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S. Ozawa — researcher profile on SciRah

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Y. Arimoto — researcher profile on SciRah

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