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J. Oila · SciRah

Researcher profile · Semantic Scholar

J. Oila

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J. Oila — researcher profile on SciRah

h-index: 13
Works: 28
Citations: 792

Most-cited papers

Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy
J. Oila, J. Kivioja, V. Ranki, K. Saarinen +5 more
2003112 citations
Semantic Scholar
Vacancy defects as compensating centers in Mg-doped GaN.
S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen +3 more
2003Physical Review Letters107 citations
Semantic Scholar
Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy
K. Saarinen, P. Seppälä, J. Oila, P. Hautojärvi +3 more
199894 citations Open access
Semantic Scholar
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
J. Oila, V. Ranki, J. Kivioja, K. Saarinen +7 more
200192 citations
Semantic Scholar
Observation of defect complexes containing Ga vacancies in GaAsN
J. Toivonen, T. Hakkarainen, M. Sopanen, H. Lipsanen +2 more
200383 citations Open access
Semantic Scholar
Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
E. Calleja, M. A. Sánchez-García, D. Basak, F. Sanchez +13 more
199881 citations
Semantic Scholar
Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy
J. Oila, A. Kemppinen, A. Laakso, K. Saarinen +5 more
200442 citations
Semantic Scholar
Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa +5 more
200224 citations
Semantic Scholar
Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry
M. Rummukainen, J. Oila, A. Laakso, K. Saarinen +2 more
200423 citations
Semantic Scholar
Ga vacancies and grain boundaries in GaN
J. Oila, K. Saarinen, A. Wickenden, D. Koleske +2 more
200323 citations
Semantic Scholar
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
K. Saarinen, J. Nissilä, J. Oila, V. Ranki +8 more
199920 citations
Semantic Scholar
Vacancy defects in epitaxial InN: identification and electrical properties
A. Laakso, J. Oila, A. Kemppinen, K. Saarinen +5 more
200418 citations
Semantic Scholar
Positron annihilation states at interfaces: evidence of divacancies
H. Kauppinen, C. Corbel, L. Liszkay, T. Laine +5 more
199716 citations
Semantic Scholar
Study of the Effects of Mg and Be Co‐Doping in GaN Layers
F. Naranjo, M. A. Sánchez-García, J. Pau, A. Jiménez +5 more
200011 citations
Semantic Scholar
Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects
J. Oila, V. Ranki, J. Kivioja, K. Saarinen +1 more
200210 citations
Semantic Scholar
Cation and anion vacancies in proton irradiated GaInP
J. Dekker, J. Oila, K. Saarinen, A. Tukiainen +2 more
20029 citations
Semantic Scholar
The stabilization of a positron lifetime spectrometer with a high-accuracy time reference
J. Nissilä, M. Karppinen, K. Rytsola, J. Oila +2 more
20018 citations
Semantic Scholar
Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation
P. Desgardin, J. Oila, K. Saarinen, P. Hautojärvi +3 more
20007 citations
Semantic Scholar
EXPERIMENTAL IDENTIFICATION OF THE DOPING DEACTIVATION MECHANISM IN SEMICONDUCTORS : APPLICATION TO NITROGEN IN ZNS0.06SE0.94
J. Oila, K. Saarinen, T. Laine, P. Hautojärvi +3 more
19996 citations
Semantic Scholar
The deactivation of nitrogen acceptors in ZnSxSe1−x and MgyZn1−ySxSe1−x studied by combining positron annihilation, SIMS, and CV measurements
J. Oila, K. Saarinen, T. Laine, P. Hautojärvi +3 more
19993 citations
Semantic Scholar
Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82, 3433 (2003)]
J. Oila, J. Kivioja, V. Ranki, K. Saarinen +5 more
20032 citations Open access
Semantic Scholar
Vacancy-type defects in GaAsN grown by metalorganic vapor phase epitaxy
J. Toivonen, J. Oila, K. Saarinen, T. Hakkarainen +2 more
2002Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)1 citations
Semantic Scholar
Characterization of native vacancies in epitaxial GaN and ZnSe semiconductor layers by positron annihilation spectroscopy
J. Oila
20020 citations
Semantic Scholar
Sample illumination facility for slow positron beam studies and its application to the photoionization cross-section of the DX center in AlxGa1−xAs
J. Oila, T. Laine, J. Nissilä, K. Fallström +2 more
19990 citations
Semantic Scholar
The deactivation of nitrogen acceptors in ZnS x Se 1 ~ x and Mg y Zn 1 ~ y S x Se 1 ~ x studied by combining positron annihilation , SIMS , and CV measurements
J. Oila, K. Saarinen, T. Laine, P. Hautoja +3 more
19990 citations
Semantic Scholar
Positron annihilation states at interfaces: evidence of divacancies
H. Kauppinen, C. Corbel, L. Liszkay, T. Laine +5 more
19970 citations
Semantic Scholar
Fall meeting of the Materials Research Society, Boston, USA 1.-5.12.1997
K. Saarinen, T. Laine, K. Skog, J. Oila +5 more
19970 citations
Semantic Scholar
Identification Of The Native Vacancy Defects In ZnS x Se 1−x And Mg y Zn 1−y S x Se 1−x by Positron Annihilation
K. Saarinen, T. Laine, K. Skog, J. Oila +5 more
19960 citations
Semantic Scholar

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