X. Dang

Most-cited papers

1. Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures

   Edward T. Yu, X. Dang, P. Asbeck, S.-S. Lau +1 more

   1999241 citations

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2. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors

   E. J. Miller, X. Dang, Edward T. Yu

   2000199 citations

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3. Schottky barrier engineering in III-V nitrides via the piezoelectric effect

   Edward T. Yu, X. Dang, L.-S. Yu, D. Qiao +5 more

   1998146 citations

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4. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

   E. J. Miller, X. Dang, H. Wieder, P. Asbeck +3 more

   2000126 citations

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5. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

   X. Dang, P. Asbeck, Edward T. Yu, G. Sullivan +4 more

   1999104 citations

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6. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy

   A. Wakahara, Takashi Tokuda, X. Dang, S. Noda +1 more

   199799 citations

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7. Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures

   X. Dang, C.-D. Wang, Edward T. Yu, K. Boutros +1 more

   199883 citations

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8. Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures

   X. Dang, Edward T. Yu, E. Piner, B. Mcdermott

   200164 citations

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9. Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs

   P. Asbeck, Edward T. Yu, S.-S. Lau, W. Sun +2 more

   200040 citations

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10. Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET

    X. Dang, R. Welty, D. Qiao, P. Asbeck +4 more

    199937 citations

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11. Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy

    K. V. Smith, X. Dang, Edward T. Yu, J. Redwing

    200017 citations

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12. Long Time-Constant Trap Effects in Nitride Heterostructure Field Effect Transistors

    X. Dang, P. Asbeck, Edward T. Yu, K. Boutros +1 more

    200016 citations

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13. Piezoelectric enhancement of Schottky barrier heights in GaN-AlGaN HFET structures

    Edward T. Yu, X. Dang, L.-S. Yu, D. Qiao +5 more

    199856th Annual Device Research Conference Digest (Cat. No.98TH8373)3 citations

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14. P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

    Guo-Yi Zhang, Zhi-Jian Yang, Y. Tong, Si-Xuan Jin +2 more

    19972 citations

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15. Low temperature photoluminescence properties of InGaN films grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 substrates by low pressure MOVPE

    Y. Tong, Guoyi Zhang, Si-Xuan Jin, Zhi-Jian Yang +2 more

    19972 citations

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16. Effects of thermal convection on growth rate of GaN by MOVPE

    G.-Y. Zhang, Y.-Z. Tong, S.-X. Jin, X. Dang +2 more

    19971 citations

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17. P-Type GaN Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

    Guo-Yi Zhang, Zhi-Jian Yang, Y. Tong, Si-Xuan Jin +2 more

    19970 citations

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18. Subpicosecond dynamics spectra in strained-layer and strained quantum well

    Wei-Xi Chen, Yu-guang Hong, X. Dang, P. Jiao +5 more

    19950 citations

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