Impact of Y2O3 Nanosheets on the Microstructural Characteristics of Alq3 Prepared via the Co-precipitation Route for Enhancement of Photodiode Performance
Miad Ali Siddiqa✉, Manar Sopaihb, Elsayed Elgazzarc
- aDepartment of Chemistry, University College in Samtah, Jazan University, Jazan 45142, Saudi Arabia
- bChemistry Department, Faculty of Science, Suez Canal University, Ismailia 41522, Egypt
- cDepartment of Physics, Faculty of Science, Suez Canal University, Ismailia 41522, Egypt
- ✉Corresponding author
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Abstract
High Resolution Image Download MS PowerPoint Slide In the present study, tris-(8-hydroxyquinoline) aluminum (Alq 3 ) and tris-(8-hydroxyquinoline) aluminum/yttrium oxide Alq 3 /Y 2 O 3 were synthesized by a facile chemical route. The crystal structure, surface morphological nature, and particle size were identified by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) micrographs. Ag/Alq 3 /p-Si/Al and Ag/Alq 3:Y 2 O 3 /p-Si/Al diodes were fabricated by the thermal evaporation technique and the electrical characteristics were evaluated from the I – V plots in dark and under illumination intensity. Thermionic emission theory, Cheung–Cheung, and Nord model have been applied to define the main electronic parameters like series resistance ( R s ), barrier height (ϕ b ), and ideality factor ( n ). The hybrid Ag/Alq 3:Y 2 O 3 /p-Si/Al diode revealed a nonideal behavior with high shunt resistance R sh and good photocurrent sensitivity. The C / G – V analysis indicated that both C and G are strongly affected by the presence of trapped charge carriers at the interface states. The obtained results indicated that R s was decreased whereas the carrier concentration ( N a ) was increased by loading Y 2 O 3 nanosheets.