Photoelectrical characteristics of novel Ru(II) complexes based photodiode
Wazirzada Aslam Farooqa, Elsayed Elgazzarb, A. Derec, Osman Dayand, Zafer Şerbetçie, Abdulkerim Karabulutf✉, Muhammad Mudasir Atifa, Atif Hanifg
- aDepartment of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia
- bDepartment of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
- cNanoscience and Nanotechnology Laboratory, Firat University, Elazig, Turkey
- dDepartment of Chemistry, Faculty of Arts and Science, Çanakkale Onsekiz Mart University, 17100, Çanakkale, Turkey
- eDepartment of Chemistry, Faculty of Arts and Sciences, Bingol University, Bingol, Turkey
- fDepartment of Electrical and Electronics Engineering, Faculty of Engineering, Sinop University, Sinop, Turkey
- gBotany and Microbiology Department, College of Science, King Saud University, Riyadh, 11543, Saudi Arabia
- ✉Corresponding author
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Abstract
The Ru(II) complex was prepared by the reaction of 4-chloro-N-[(E)-(pyridin-2-yl) methylidene] benzene-1-sulfonamide, [RuCl2(p-cymene)]2 and 2,2′-(pyridine-2,6-diyl) bis(1H-benzimidazole) compounds by simple chemical technique. Al/ruthenium(II) complex/p-Si/Al was characterized by electronic devices and its electrical properties were studied as photodiode. In dark, the photodiode parameters such as potential barrier $$\varphi$$φ and ideality factor $${\text{n}}$$n were investigated from current–voltage (I–V) plot and confirmed by using Cheung–Cheung and Norde’s models. Under illumination effect, the synthesized device shows high photosensitivity and the charge carriers increased based on the trapped state created under the conduction band. It was observed from conductance–voltage (G–V) and resistance–voltage (Rs–V) measurements that the series resistance $${R_s}$$Rs of the diode is decreased dramatically and its conductance $$G$$G is increased by applied electric field.