Thermal sensors based on delafossite film/p-silicon diode for low-temperature measurements
Elsayed Elgazzara, Adem Tataroğlub, Ahmed A. Al‐Ghamdic, Yusuf A. Al‐Turkid, Wazirzada Aslam Farooqe, Farid El‐Tantawya f, Fahrettin YAKUPHANOĞLUc g✉
- aDepartment of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
- bDepartment of Physics, Faculty of Science, Gazi University, Ankara, Turkey
- cDepartment of Physics, Faculty of Sciences, King Abdulaziz University, Jeddah, Saudi Arabia
- dDepartment of Electrical and Computer Engineering, King Abdulaziz University, Jeddah, Saudi Arabia
- eDepartment of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia
- fCenter of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia
- gDepartment of Physics, Faculty of Science, Firat University, Elazig, Turkey
- ✉Corresponding author
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Abstract
A CuFeO2 film was prepared on p-type silicon wafer to fabricate an Al/CuFeO2/p-Si/Al diode by the sol–gel method. The temperature and frequency dependence of electrical characteristics of Al/CuFeO2/p-Si/Al diode were investigated using current–voltage (I–V) and capacitance/conductance–voltage (C/G–V) measurements. It is found that the ideality factor (n) decreases while zero-bias barrier height (ΦBo) increases with increasing temperature. The conventional Richardson plot [ln(Io/T2) vs. 1000/T] shows a linearity above about 200 °K. From the slope and intercept of the linear region, the values of activation energy (Ea) and Richardson constant (A*) were found to be 0.15 eV and 1.24 × 10−8 A cm−2 K−2, respectively. Then, the values of mean barrier height and A* were determined from the modified Richardson plot [ln(I0/T2)−q2σ02/2k2T2 vs. 1000/T] and found to be 1.06 eV and 33.87 A cm−2 K−2, respectively. The calculated A* value is very close to the theoretical value of 32 A cm−2 K−2 for p-type Si. The obtained results indicate that Al/CuFeO2/p-Si/Al diode can be used as a temperature measurement sensor for low-temperature controlling applications.