Logarithmic organic photodetectors
Elsayed Elgazzara, Mehmet Özdemirb, Hakan Ustab, Ahmed A. Al‐Ghamdic, A. Dered, Farid El‐Tantawya, Fahrettin YAKUPHANOĞLUc d e✉
- aDepartment of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
- bDepartment of Materials Science and Nanotechnology Engineering, Abdullah Gül University, Kayseri, Turkey
- cPhysics Department, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia
- dDepartment of Physics, Faculty of Science, Fırat University, Elazig, Turkey
- eNanoscience and Nanotechnology Laboratory, Fırat University, Elazig, Turkey
- ✉Corresponding author
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Abstract
Abstract A novel photodetector of Al/GO:C8-BTBT/n-Si/Au with various graphene oxide (GO) contents has been investigated. The electrical properties of the diodes were characterized by current–voltage ( I – V ) and capacitance–voltage ( C – V ) measurements. The values of barrier height, ideality factor, and series resistance of the diodes were determined from I – V characteristic curves by using Norde’s equations. The photocurrent properties of the diode were studied under various illumination intensities. The photoconducting mechanism of the diodes is controlled by the traps. The photoresponse properties of the diodes are increased with GO contents. The obtained results indicate that graphene oxide doped 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene/n-Si heterojunctions can be used as a photodetector for optoelectronic applications.