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Novel photoconductive Ag/nanostructure ruthenium oxide/p-type silicon Schottky barrier diode by sol–gel method
Ahmed A. Al‐Ghamdia b c, Attieh A. Al-Ghamdia b d, Omar A. Al‐Hartomyb c e f, Ahmed M. Nawarg h, Elsayed Elgazzarg h, Farid El‐Tantawyg h, Fahrettin YAKUPHANOĞLUb c i j✉
- aDepartment of Physics, Faculty of Science, King Abdulaziz University, North Campus, Jeddah, Saudi Arabia
- bDepartment of Physics, Faculty of Sciences, King Abdulaziz University, Jeddah, Saudi Arabia
- cKing Abdulaziz University
- dKing Abdulaziz University, North Campus
- eDepartment of Physics, Faculty of Science, Tabuk University, Tabuk, 71491, Saudi Arabia
- fTabuk University
- gDepartment of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
- hSuez Canal University
- iDepartment of Physics, Faculty of Science, Firat University, 23119, Elazig, Turkey
- jFirat University
- ✉Corresponding author
Journal of Sol-Gel Science and TechnologySpringer Science+Business Media2013-06-21 17 citations48 references
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