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Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy

Anne Bourlange^a, David J. Payne^a, Robert M. J. Jacobs^a, R.G. Egdell^a, John S. Foord^a, Andreas Schertel^a, Peter J. Dobson^a, JOHN L. HUTCHISON^a

^aDepartment of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA, United Kingdom, Carl Zeiss SMT AG, Carl-Zeiss-Strasse 56, 73447 Oberkochen, Germany, Oxford University Begbroke Science Park, Sandy Lane, Yarnton, Kidlington, Oxon OX5 1PF, United Kingdom, and Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

Chemistry of Materials American Chemical Society2008-06-28 30 citations15 references

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Abstract

Arrays of In2O3 islands have been grown on cubic zirconia by oxygen plasma assisted molecular beam epitaxy at high substrate temperatures. The square pyramidal epitaxial islands have a narrow size distribution centering on 1 μm and a uniform azimuthal orientation with square edges aligned along the ⟨110⟩ directions of the substrate.

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Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy

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